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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 2/2020

01.02.2020

Chemical bath deposited WS2 quantum dots on TiO2 for dye sensitized solar cell applications

verfasst von: Niket Suresh Powar, Gopika Gopakumar, Kulanthai Velu Ramanathan, Shantikumar V. Nair, Mariyappan Shanmugam

Erschienen in: Optical and Quantum Electronics | Ausgabe 2/2020

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Abstract

Tungsten disulphide (WS2) quantum dots, coated on titanium dioxide (TiO2) by chemical bath deposition, increased the photovoltaic performance of dye sensitized solar cells (DSSCs) by ~ 11%. WS2 quantum dots exhibited a dominant optical absorption in a spectral range of 350–800 nm with its characteristics peaks at 550 nm and 620 nm corresponding to the direct bandgap optical transition at the K-point. X-ray photoelectron spectroscopic measurement was performed to study W 4f and S 2p peaks assured the presence of phase-pure WS2 quantum dots. Further, transmission electron microscopic studies showed a distribution of 8.5–20 nm quantum dots with d-spacing of 0.33 nm confirming the WS2. Photovoltaic characteristics of DSSCs with WS2 quantum dots asserted the additional photo-electrons generated by WS2 via the increment in photocurrent density and overall performance. This study demonstrated the possibility of integrating 2D-layered quantum dots into DSSCs as an additional photo-absorbing material candidate along with organic photo-sensitizer such as Ruthenium based N719.
Vorheriger Artikel Surface plasmon based 1D-grating device for efficient sensing using noble metals
Nächster Artikel Enhancement of the second harmonic generation in a coupled lens-shaped quantum dots under wetting layer, temperature, pressure, and electric field effects

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Metadaten
Titel
Chemical bath deposited WS2 quantum dots on TiO2 for dye sensitized solar cell applications
verfasst von
Niket Suresh Powar
Gopika Gopakumar
Kulanthai Velu Ramanathan
Shantikumar V. Nair
Mariyappan Shanmugam
Publikationsdatum
01.02.2020
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 2/2020
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-019-2190-4

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