Design and of analysis of SPDT Ohmic RF MEMS switch

This paper reports on the simulation and analysis of Ohmic SPDT (single pole double throw) switch for telecommunication application. A comparative study is performed by varying the gaps from 3 to 2 μm for three different types of beam materials, namely gold, aluminum, and platinum. The design is based on the series configuration consisting of two cantilever type switches. In order to improve isolation, low-frequency Ohmic SPDT switch is proposed. The main objective of the paper is to achieve low frequency to fit into C-band. By using COMSOL Multiphysics tool, we found pull-in-voltage as 2.8 V at a beam with 0.5 μm. The performance analysis is done by using HFSS tool and is found to perform at 7.3 GHz with isolation of − 43 dB, the return loss and insertion losses are − 21 and − 1.3 dB, respectively.