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Erschienen in:
01.10.2007
Effect of substrate on hydrogen in and out diffusion from a-Si:H thin films
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2007
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Abstract
We present a detailed study on the effect of the substrate on the structure and hydrogen evolution from p-type hydrogenated amorphous silicon thin films co-deposited on the grounded and RF electrodes of an asymmetric radio frequency glow discharge reactor, as well as the similar films exposed to an hydrogen plasma. We used spectroscopic ellipsometry and hydrogen evolution measurements to analyze the effects of the substrate, ion energy and hydrogen plasma on the films microstructure, thickness, hydrogen content, hydrogen binding and hydrogen evolution. The hydrogen evolution spectra show a strong substrate dependence. In particular on crystalline silicon substrate, we observe the formation of bubbles. For the various substrates, ion energy and hydrogen plasma treatment do not affect the hydrogen evolution spectra. These results indicate that the action of hydrogen in a-Si:H is modified by the nature of the substrate.