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2019 | OriginalPaper | Buchkapitel

14. Epitaxial Growth of Bi₂X₃ Topological Insulators

verfasst von : Xufeng Kou, Kang L. Wang

Erschienen in: Bismuth-Containing Alloys and Nanostructures

Verlag: Springer Singapore

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Abstract

Tetradymite-type Bi₂X₃ (X = Se, Te, Sb) systems have been used as the best thermoelectric materials for decades. Recently, such V-VI compound materials have attracted immense interests because they are identified as topological insulators with salient features associated with the unique topological surface states. In this chapter, we review the use of molecular beam epitaxy technique to achieve single-crystalline Bi₂X₃ thin films with atomically smooth surface and extremely low-defect density. In particular, we will explore the unique van der Waals epitaxy growth mechanism, providing detailed discussions on the choice of key growth procedures and parameters during the MBE growth. Furthermore, we will introduce advanced growth techniques such as functional doping and structural engineering so that the functionalities can be further multiplied. Finally, we will give an outlook on Bi₂X₃-based materials system for exploring new physics and device applications.

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Titel: Epitaxial Growth of Bi2X3 Topological Insulators
verfasst von: Xufeng Kou
Kang L. Wang
Verlag: Springer Singapore
Buch: Bismuth-Containing Alloys and Nanostructures
Print ISBN: 978-981-13-8077-8

Electronic ISBN: 978-981-13-8078-5

Copyright-Jahr: 2019
DOI: https://doi.org/10.1007/978-981-13-8078-5_14

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