Anzeige
Erschienen in:
01.06.2011
Fabrication and ferroelectric properties of sol–gel derived 1–1 intergrowth-superlattice-structured Bi3TiNbO9-Bi4Ti3O12 thin films
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 6/2011
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
1–1 intergrowth-superlattice-structured Bi3TiNbO9–Bi4Ti3O12 (BTN–BIT) ferroelectric thin films have been prepared on p-Si substrates by sol-gel processing. The precursor films are crystallized in the desired intergrown BTN–BIT superlattice structures by optimizing the processing conditions. Synthesized BTN–BIT thin films annealed below 750 °C are polycrystalline, uniform and crack-free, no pyrochlore phase or other second phase, and exhibited good ferroelectric properties. As the annealing temperature increases from 600 to 700 °C, both remanent polarization P
r and coercive electric field E
c of BTN–BIT thin films increase, but the pyrochlore phase in BTN–BIT films annealed above 750 °C will impair the ferroelectric properties. The BTN–BIT thin films annealed at 700 °C have a P
r value ~19.1μC/cm2 and an E
c value ~135 kV/cm.