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02.05.2023 | Original Article

Graphene quantum dots modulated solution-derived InGaO thin-film transistors and stress stability exploration

verfasst von: Xiao-Fen Xu, Gang He, Lei-Ni Wang, Wen-Hao Wang, Xiao-Yu Wu

Erschienen in: Rare Metals | Ausgabe 7/2023

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Abstract

Graphene quantum dots (GQDs) doped InGaO (IGO) thin film transistors (TFTs) have been fabricated based on solution-driven ZrO_x as gate dielectrics. Compare to pure IGO TFTs, superior electrical performance of the GQDs-IGO TFTs can be achieved by adjusting the doping concentration. It has been demonstrated that GQDs-modified IGO TFTs devices with GQDs doping content of 0.3 mg·ml⁻¹ have the optimized performances, including field-effect mobility (μ_FE) of 22.02 cm²·V^–1·s⁻¹, on/off current ratio (I_on/I_off) of 7.06 × 10⁷, subthreshold swing (SS) of 0.09 V⋅dec⁻¹, hysteresis of 0.04 V and interfacial trap states (D_it) of 1.03 × 10¹² cm⁻². In addition, bias stress and illumination stress tests have been performed and excellent stability has been achieved for optimized GQDs-IGO-TFTs. The GQDs-IGO TFTs device showed smaller threshold voltage shift of 0.12 and 0.04 V under positive bias stress (PBS) test and negative bias stress (NBS) test for 3600 s, respectively. And it showed smaller threshold voltage shift of 0.27 and 0.34 V for red light under the PBS and NBS test for 3600 s, respectively. Meanwhile, it showed smaller threshold voltage shift of 0.20 and 0.22 V for green light under PBS and NBS test for 3600 s, respectively. It also showed smaller threshold voltage shift of 0.17 and 0.12 V for blue under the positive bias illumination stress (PBIS) test and negative bias illumination stress (NBIS) test for 3600 s, respectively. Low-frequency noise (LFN) characteristics of GQDs-IGO/ZrO_x TFTs indicated that the noise source came from the fluctuations in mobility. Finally, a low voltage resistor-loaded unipolar inverter has been built based on GQDs-IGO/ZrO_x TFT, demonstrating good dynamic response behavior and a maximum gain of 7.4. These experimental results have suggested that solution-processed GQDs-IGO/ZrO_x TFT may envision potential applications in low-cost and large-area electronics.

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Vorheriger Artikel N-doped core–shell mesoporous carbon spheres embedded by Ni nanoparticles for CO2 electroreduction

Nächster Artikel 3D nitrogen and boron dual-doped carbon quantum dots/reduced graphene oxide aerogel for advanced aqueous and flexible quasi-solid-state zinc-ion hybrid capacitors

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Titel: Graphene quantum dots modulated solution-derived InGaO thin-film transistors and stress stability exploration
verfasst von: Xiao-Fen Xu
Gang He
Lei-Ni Wang
Wen-Hao Wang
Xiao-Yu Wu
Publikationsdatum: 02.05.2023
Verlag: Nonferrous Metals Society of China
Erschienen in: Rare Metals / Ausgabe 7/2023
Print ISSN: 1001-0521
Elektronische ISSN: 1867-7185
DOI: https://doi.org/10.1007/s12598-023-02307-y

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