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Erschienen in: Microsystem Technologies 2/2021

20.07.2018 | Technical Paper

III–V super-lattice SPST/SPMT pin switches for THz communication: theoretical reliability and experimental feasibility studies

verfasst von: Abhijit Kundu, Maitreyi Ray Kanjilal, Moumita Mukherjee

Erschienen in: Microsystem Technologies | Ausgabe 2/2021

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Abstract

A physics-based Quantum-Modified CLassical Drift–Diffusion (QMCLDD) non-linear mathematical model has been developed for design and characterisation of GaN/AlGaN asymmetrical superlattice pin based single-pole single-throw (SPST) and single-pole multi-throw (SPMT) switches for sub-MM wave communication systems. The simulator has incorporated several important physical phenomena that arise in superlattice structure, including quantum confinement effects, generation-recombination and tunnelling generation of carriers as well as scattering limited carrier mobility and velocity in GaN/AlGaN structure. In order to reduce the dislocation density and in turn the series resistance in GaN/AlGaN heterostructure, thin AlN nucleation layer and a buffer layer are considered in the simulation. It is observed that the RF series resistance of the pin device, operating around 0.2 THz frequency regime, reduces in case of proposed superlattice structure. The advantages of super-lattice pin diode over the conventional Si devices are the faster reverse recovery time (~ 9 vs 35 ns) and lowering of forward RF series resistances (0.39 vs 1.20 Ω). This study also reveals that SPST and SPMT switches made up with super-lattice devices are characterized by low insertion loss (~ 0.13 and 0.15 dB, respectively) and high isolation (~ 65.4 and 82.5 dB, respectively). A good agreement between theory and experiment establishes the superiority of the present model over the others. A comparative analysis of Si and GaN/AlGaN super-lattice pin SPST and SPMT switches establishes the potential of the later for its application in high-frequency THz-communication. In addition to this, a detailed thermal modelling of the device has also been done to make the analysis more realistic. The junction temperature of the designed GaN/AlGaN superlattice pin switch will be as high as 377 K, which is quite moderate compared to its flat profile counterpart. To the best of authors’ knowledge, this is the first ever report on QMCLDD non-linear modelling of pin SPST and SPMT switches (series-shunt combination) at THz-arena.

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Literatur
Zurück zum Zitat Eisele H, Haddad GI (1997) In: Sze SM (ed) Microwave semiconductor device physics. Wiley, New York Eisele H, Haddad GI (1997) In: Sze SM (ed) Microwave semiconductor device physics. Wiley, New York
Zurück zum Zitat Sze SM (1997) VLSI technology, 2nd edn. McGraw-Hill International, New York Sze SM (1997) VLSI technology, 2nd edn. McGraw-Hill International, New York
Metadaten
Titel
III–V super-lattice SPST/SPMT pin switches for THz communication: theoretical reliability and experimental feasibility studies
verfasst von
Abhijit Kundu
Maitreyi Ray Kanjilal
Moumita Mukherjee
Publikationsdatum
20.07.2018
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 2/2021
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-018-4053-5

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