Skip to main content
Fachgebiete
Automobil + Motoren Bauwesen + Immobilien Business IT + Informatik Elektrotechnik + Elektronik Energie + Nachhaltigkeit Finance + Banking Management + Führung Marketing + Vertrieb Maschinenbau + Werkstoffe Versicherung + Risiko
DE
EN
Themenseiten
Organisationspsychologie Projektmanagement Marketing Smart Manufacturing
Bücher
Zeitschriften
Weitere Formate
Podcasts Webinare Technik Webinare Wirtschaft Kongresse Veranstaltungskalender Awards
Jetzt Einzelzugang starten
Zugang für Unternehmen
Referenzkunden
MTZ-Fachkongress

Antriebe und Energiesysteme von morgen


Austausch von Automobil- und Energiewirtschaft

Am 14./15. Mai geht es in Chemnitz um die Mobilitätswende durch Elektro- und Wasserstofffahrzeuge.
Erweiterte Suche
Anmelden
nach oben
The International Journal of Advanced Manufacturing Technology
Erschienen in: The International Journal of Advanced Manufacturing Technology 9-10/2022

01.04.2022 | ORIGINAL ARTICLE

Investigation of line-shaped CO2 laser annealing on InN/AlN/sapphire substrates

verfasst von: Shih-Feng Tseng, Chun-Jen Wang, Wei-Chun Chen

Erschienen in: The International Journal of Advanced Manufacturing Technology | Ausgabe 9-10/2022

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

In this study, a radio-frequency plasma-assisted chemical beam epitaxy (RF-PACBE) system with low growing temperatures was used to grow high-quality indium nitride (InN) thin films. The prepared InN thin films were annealed through a line-shaped CO2 laser beam irradiation in an atmospheric environment at room temperature. The structural and electrical properties of InN thin films annealed with different CO2 laser annealing parameters were measured and analyzed. The crystalline grains turned into large and granular morphologies after the InN thin films were annealed under various feeding speeds of a motorized X-axis positioning stage. According to the measured XRD patterns and rocking curves, the InN (0 0 2) peak intensities of laser-annealed thin films were higher than those of as-grown InN thin films. All surface roughnesses and sheet resistances of laser-annealed InN thin films were higher and less than those of as-grown InN thin films. At the set feeding speed of 7.5 mm/s, the laser-annealed InN thin film had the largest grain size of 69.4 nm and the lowest sheet resistance of 20.21 ± 0.27 Ω/sq. The experimental results revealed that the proper annealing conditions could decrease grain boundaries and release internal stresses to enhance the electrical properties through adjusting feeding speeds.
Vorheriger Artikel Influence of the key process parameters in hydrodynamic deep drawing utilizing a combined floating and static die cavity
Nächster Artikel An efficient trans-scale and multi-stage approach for the deformation analysis of large-sized thin-walled composite structure in aircraft assembly

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Jetzt informieren
Literatur
1.
Sparvoli M, Gazziro M, Mansano R, Chubaci J, Jorge F, Onmori R (2018)Study of InN thin film for pulse oximeter application. Latin America Optics and Photonics Conference, pp Tu4A–41
2.
Wu GG, Li WC, Shen CS, Gao FB, Liang HW, Wang H, Song LJ, Du GT (2012) Near infrared electroluminescence from n-InN/p-GaN light-emitting diodes. Appl Phys Lett 100:103504
3.
Chowdhury FI, Alnuaimi A, Alkis S, Ortaç B, Aktürk S, Alevli M, Dietz N, Okyay AK, Nayfeh A (2016) Enhancement in c-Si solar cells using 16 nm InN nanoparticles. Mater Res Express 3:079502
4.
Alizadeh M, Goh BT, Qadir KW, Yousefi H, Mehmood MS, Rasuli R (2019) Improvement of polycrystalline InN thin films properties by localized ion source under low RF plasma ambient. J Mater Sci: Mater Electron 30 :15534–15543
5.
Lye KS, Kobayashi A, Ueno K, Ohta J, Fujioka H (2016) InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature.Appl Phys Lett 109:032106
6.
Basilio AM, Hsu YK, Chang CC, Wei PC, Ganguly A, Shih HC, Chen YT, Chen LC, Chen KH (2010) Electrochemical characterization of InN thin films for biosensing applications. J New Mat Electrochem Syst 13(4):337–343
7.
Rai SK, Kao KW, Agarwal A, Gwo SJ, Kumar A, Yeh JA (2018) Platinum coating on an ultrathin InN epilayer as a dual gas sensor for selective sensing of ammonia and acetone by temperature modulation for liver malfunction and diabetes applications. ECS J Solid State Sci Technol 7(7):Q3221–Q3229CrossRef
8.
Chen X, Liu H, Li Q, Chen H, Peng R, Chu S, Cheng B (2015) Terahertz detectors arrays based on orderly aligned InN nanowires. Sci Rep 5:13199CrossRef
9.
Zhang Z, Xiang G, Zhang J, Zhang J, Liu Y, Peng W, Zhou Y, Li R, Mei M, Zhao Y, Deng G, Wang H (2021) Preparation of InN films at different substrate temperatures and the effect of operating temperatures on the carrier transmission characteristics of p-NiO/n-InN heterojunction. Vacuum 194:110583
10.
Li H, Zhang H, Wu H, Hao J, Liu C (2020) Tree-like structures of InN nanoparticles on agminated anodic aluminum oxide by plasma-assisted reactive evaporation. Appl Surf Sci 503:144309
11.
Peng H, Feng X, Gong J, Wang W, Liu H, Quan Z, Pan S, Wang L (2018) Low temperature growth of polycrystalline InN films on non-crystalline substrates by plasma-enhanced atomic layer deposition. Appl Surf Sci 459:830–834CrossRef
12.
Chen WC, Chen HP, Lin YW, Liu DR (2019) Growth of narrow substrate temperature window on the crystalline quality of InN epilayers on AlN/Si(1 1 1) substrates using RF-MOMBE. J Cryst Growth 522:204–209CrossRef
13.
Mickevičius J, Dobrovolskas D, Steponavičius T, Malinauskas T, Kolenda M, Kadys A, Tamulaitis G (2018) Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth. Appl Surf Sci 427:1027–1032CrossRef
14.
Liu G, Zhao S, Henderson RDE, Leonenko Z, Abdel-Rahman E, Mi Z, Ban D (2016) Nanogenerators based on vertically aligned InN nanowires. Nanoscale 8:2097–2106CrossRef
15.
Chang SP, Chen KJ, Kuo PJ, Chiou YZ (2012) Effects of surface treatment and annealing on properties of InN layers grown using metal organic chemical vapor deposition. Appl Mech Mater 271–272:190–196
16.
Parr AA, Gill K, Gardiner DJ, Hoyland JD, Sands D, Brunson K, Carline RT (2002) A comparison of laser- and furnace-annealed polysilicon structure. Semicond Sci Technol 17:47–54CrossRef
17.
Maruyama T, Yorozu K, Noguchi T, Seki Y, Saito Y, Araki T, Nanishi Y (2003) Surface treatment of GaN and InN using (NH4)2Sx,. Phys Status Solidi C 0:2031–2034
18.
Prepelita P, Craciun V, Garoi F, Staicu A (2015) Effect of annealing treatment on the structural and optical properties of AZO samples. Appl Surf Sci 352:23–27CrossRef
19.
Shih HI, Kim KH, Kim TW, Kim HK (2016) Fiber laser annealing of brush-painted ITO nanoparticles for use as transparent anode for organic solar cells. Ceram Int 42:13983–13989CrossRef
20.
Lin HK, Huang YJ, Shih WC, Chen YC, Chang WT (2019) Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications. BMC Chem 13:30CrossRef
21.
Tseng SF, Hsiao WT, Huang KC, Chiang D, Chou CP (2011) Mechanical and optoelectric properties of post-annealed fluorine-doped tin oxide films by ultraviolet laser irradiation. Appl Surf Sci 257:7204–7209CrossRef
22.
Li BJ, Wang YY, Huang LJ, Cao HD, Wang Q, Ren NF, Ding H (2018) Ultrasonic-vibration-assisted laser annealing of fluorine-doped tin oxide thin films for improving optical and electrical properties: Overlapping rate optimization. Ceram Int 44:2225–2234
23.
Kang J, Koh JH (2020) The effect of Ga doping on ZnO thin films subjected to CO2 laser annealing. Ceram Int 46(8):10603–10609CrossRef
24.
Ding CF, Hsiao WT, Yong HT (2019) Evaluation of structural properties of AZO conductive films modification using low-temperature ultraviolet laser annealing. Ceram Int 45:16387–16398CrossRef
25.
Chung CK, Chuang KP, Cheng SY, Lin SL, Hsie KY (2013) Effect of solution contents on the evolution of microstructure and photoluminescence of laser-annealed rutile TiO2 thin films. J Alloys Compd 574:83–87CrossRef
26.
Chen MF, Lin K, Ho YS (2012) Laser annealing process of ITO thin films using beam shaping technology. Opt Lasers Eng 50:491–495CrossRef
27.
El Hamali SO, Cranton WM, Kalfagiannis N, Hou X, Ranson R, Koutsogeorgis DC (2016) Enhanced electrical and optical properties of room temperature deposited aluminium doped Zinc Oxide (AZO) thin films by excimer laser annealing. Opt Lasers Eng 80:45–51
28.
Look DC, Lu H, Schaff WJ, Jasinski J, Liliental-Weber Z (2002) Donor and acceptor concentrations in degenerate InN. Appl Phys Lett 80:258–260CrossRef
29.
Bhuiyan AG, Hashimoto A, Yamamoto A (2003) Indium nitride (InN): a review on growth, characterization, and properties. J Appl Phys 94:2779–2808CrossRef
30.
Ratke L, Voorhees PW (2002) Growth and coarsening: Ostwald ripening in material processing, 1st edn. Springer, BerlinCrossRef
31.
Huang LJ, Li BJ, Ren NF (2016) Enhancing optical and electrical properties of Al-doped ZnO coated polyethylene terephthalate substrates by laser annealing using overlap rate controlling strategy. Ceram Int 42:7246–7252CrossRef
32.
Li BJ, Huang LJ, Ren NF, Kong X, Cai YL, Zhang JL (2015) Improving the performance of nickel-coated fluorine-doped tin oxide thin films by magnetic-field-assisted laser annealing. Appl Surf Sci 351:113–118CrossRef
33.
Alizadeh M, Goh BT, Pandey AK, Dee CF, Rahman SA (2017) Low-RF-power growth of InN thin films by plasma-assisted reactive evaporation with a localized ion source. Mater Chem Phys 199:408–415CrossRef
34.
Metzger T, Höpler R, Born E, Ambacher O, Stutzmann M, Stömmer R, Schuster M, Göbel H, Christiansen S, Albrecht M, Strunk HP (1998) Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry. Philos Mag A 77:1013CrossRef
35.
Tseng SF (2018) Investigation of post-annealing aluminum-doped zinc oxide (AZO) thin films by a graphene-based heater. Appl Surf Sci 448:163–167CrossRef
36.
Asemi M, Ahmadi M, Ghanaatshoar M (2018) Preparation of highly conducting Al-doped ZnO target by vacuum heat-treatment for thin film solar cell applications. Ceram Int 44:12862–12868CrossRef
37.
Li BJ, Yang GY, Huang LJ, Zu W, Ren NF (2020) Performance optimization of SnO2:F thin films under quasi-vacuum laser annealing with covering a transparent PET sheet: a study using processing map. Appl Surf Sci 509:145334
38.
Li BJ, Huang LJ, Zhou M, Ren NF, Wu B (2014) Surface morphology and photoelectric properties of fluorine-doped tin oxide thin films irradiated with 532 nm nanosecond laser. Ceram Int 40:1627–1633CrossRef
39.
Zamkovskaya A, Maksimova E, Nauhatsky I, Shapoval M (2017) X-ray diffraction investigations of the thermal expansion of iron borate FeBO3 crystals. J Phys: Conf Ser 929:012030
40.
Ali AH, Hassan Z, Shuhaimi A (2018) Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si. Appl Surf Sci 443:544–547CrossRef
Metadaten
Titel
Investigation of line-shaped CO2 laser annealing on InN/AlN/sapphire substrates
verfasst von
Shih-Feng Tseng
Chun-Jen Wang
Wei-Chun Chen
Publikationsdatum
01.04.2022
Verlag
Springer London
Erschienen in
The International Journal of Advanced Manufacturing Technology / Ausgabe 9-10/2022
Print ISSN: 0268-3768
Elektronische ISSN: 1433-3015
DOI
https://doi.org/10.1007/s00170-022-09130-2

Weitere Artikel der Ausgabe 9-10/2022

The International Journal of Advanced Manufacturing Technology 9-10/2022 Zur Ausgabe

ORIGINAL ARTICLE

Effect of ultrasonic compound cutting on the microstructure and properties of formed chip

ORIGINAL ARTICLE

Evaluation on forming process of AZ31 alloy complex curved surfaces by clustering balls spinning method

ORIGINAL ARTICLE

Experimental and numerical study on surface generated mechanism of robotic belt grinding process considering the dynamic deformation of elastic contact wheel

ORIGINAL ARTICLE

Deep learning-based automatic optical inspection system empowered by online multivariate autocorrelated process control

ORIGINAL ARTICLE

Micro-extrusion process and microstructure evolution of miniature heat pipe in 6063 aluminum alloy

ORIGINAL ARTICLE

Effects of voids and raster orientations on fatigue life of notched additively manufactured PLA components

Premium Partner

    Marktübersichten

    Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen. 

    Zur Marktübersicht
    Bildnachweise