Ausgabe 2-3/2006
Special Issue on the Proceedings of the Workshop on Modeling and Simulation of Electron Devices held in Pisa, Italy, July 4–5, 2005
Inhalt (34 Artikel)
Numerical modeling of TeraHertz electronic devices
L. Varani, C. Palermo, J. F. Millithaler, J. C. Vaissière, E. Starikov, P. Shiktorov, V. Gružinskis, J. Mateos, S. Pérez, D. Pardo, T. González
Monte Carlo study of electron transport in strained silicon inversion layers
E. Ungersboeck, H. Kosina
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators
F. Bertazzi, G. Conte, F. Bonani, S. Donati Guerrieri, G. Ghione
Channel noise modelling of nanoMOSFETs in a partially ballistic transport regime
Giorgio Mugnaini, Giuseppe Iannaccone
One-dimensional screening effects in bulk-modulated carbon nanotube transistors
L. Latessa, A. Pecchia, A. Di Carlo
Monte Carlo simulation of terahertz quantum cascade lasers: The influence of the modelling of carrier-carrier scattering
O. Bonno, J.-L. Thobel, F. Dessenne
Scaling effects in AlGaN/GaN HEMTs: Comparison between Monte Carlo simulations and experimental data
S. Russo, A. Di Carlo, W. Ruythooren, J. Derluyn, M. Germain
Strain effects in SiN-passivated GaN-based HEMT devices
Fabio Sacconi, Michael Povolotskyi, Aldo Di Carlo
Sensitivity of single- and double-gate MOS architectures to residual discrete dopant distribution in the channel
P. Dollfus, A. Bournel, J. E. Velázquez
Atomistic effect of delta doping layer in a 50 nm InP HEMT
N. Seoane, A. J. García-Loureiro, K. Kalna, A. Asenov
Simulation of the gate tunnel current in the double gate (DG) MOS transistor
B. Majkusiak, J. Walczak
Effect of layout parasitics on the current distribution of power MOSFETs operated at high switching frequency
Tonio Biondi, Giuseppe Greco, Gaetano Bazzano, Salvatore Rinaudo
A fast and stable Poisson-Schrödinger solver for the analysis of carbon nanotube transistors
M. Pourfath, H. Kosina, S. Selberherr
Efficient calculation of lifetime based direct tunneling through stacked dielectrics
M. Karner, A. Gehring, H. Kosina
A study of envelope functions in FD-SOI devices for non-parabolic bands
F. M. Gómez-Campos, S. Rodríguez-Bolívar, J. A. Jiménez-Tejada, J. E. Carceller
Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study
M.-A. Jaud, S. Barraud, P. Dollfus, H. Jaouen, F. De Crecy, G. Le Carval
Numerical simulation of ballistic surface transport in cylindrical nanosystems
Alex Marchi, Susanna Reggiani, Massimo Rudan, Andrea Bertoni
Excess drain noise simulation in ultrathin oxides MOSFETs
T. Contaret, G. Ghibaudo, A. Ferron, F. Bœuf
Complementary split rings resonators (CSRRs): Towards the miniaturization of microwave device design
J. Bonache, I. Gil, J. García-García, F. Martín
Equivalent circuit for RF flexural free-free MEMS resonators
M. Mastrangeli, A. Nannini, D. Paci, F. Pieri
Numerical simulation of time resolved charge transport in semiconductor structures for electronic devices
G. Citarella, W. R. Fahrner, H. C. Neitzert, F. Wünsch, M. Kunst
2D Modeling of nanoscale DG SOI MOSFETs in and near the subthreshold regime
Sigbjørn Kolberg, Tor A. Fjeldly
Simulation of slow current transients and current collapse in GaN FETs
H. Takayanagi, H. Nakano, K. Yonemoto, K. Horio
Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs
Marco Pala, Cyrille Le Royer, Gilles Le Carval, Laurent Clavelier
Numerical simulation of small silicon partially insulated MOSFETs
Wilfried Klix, Roland Stenzel, Tom Herrmann
Numerical simulation of electrical characteristics in nanoscale Si/GaAs MOSFETs
Yiming Li, Wei-Hsin Chen