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Erschienen in: Microsystem Technologies 12/2016

29.09.2015 | Technical Paper

Design and modeling of a novel RF MEMS series switch with low actuation voltage

verfasst von: Khadeijeh Khodadady, Bahram Azizolla Ganji

Erschienen in: Microsystem Technologies | Ausgabe 12/2016

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Abstract

This paper presents the design, analysis, modeling and simulation of a novel RF MEMS series switches with low actuation voltage. A mechanical modeling is presented to describe the behavior of the series switch. The switch is designed with special mechanical structures. The novel mechanical and mathematical modeling of the switch leads to calculation of the accurate actuation voltage. The spring constant has been calculated in relation to the presence of the residual stress in the beam. The calculated spring constant for this beam is used to determine the accurate actuation voltage. The size of the switch is 60 × 110 µm2. The designed RF MEMS series switch was simulated using Intellisuite MEMS tool. He calculated actuation voltage is 4.05 V and simulated one is 4.2 V for 0.6 µm beam thickness. The calculated result is also very close with simulated one. The proposed switch compared with other electrostatic switches has low actuation voltage and small size. The RF characteristics were simulated using HFSS software and the switch has good RF performance. The insertion loss of 0.067 dB, return loss of 26 dB and isolation of 16 dB were achieved at 40 GHz.

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Metadaten
Titel
Design and modeling of a novel RF MEMS series switch with low actuation voltage
verfasst von
Khadeijeh Khodadady
Bahram Azizolla Ganji
Publikationsdatum
29.09.2015
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 12/2016
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-015-2683-4

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