Introduction
Graphene
Processing
Powder metallurgy (PM)
Mixing
Consolidation
Electrochemical deposition
Electrodeposition
Electroless deposition
Chemical vapour deposition (CVD)
Layer-by-layer assembly
Metal infiltration
Other processing methods
Preform impregnation
Cold spraying
Accumulative roll bonding (ARB)
Densification
Mechanical properties
Strength and stiffness
References | Processing route | Material | Hardness | Young’s modulus (GPa) | Yield strength (MPa) | Maximum strength (MPa) | Ductility (%) | |||
---|---|---|---|---|---|---|---|---|---|---|
[12] | Ball milling + Hot pressing | Cu Cu-3vol %GNPs Cu-5vol %GNPs Cu-8vol %GNPs Cu-12vol %GNPs | 76 84 (11%) 92 (21%) 104 (37%) 94 (24%) | 147 181 (23%) 247 (68%) 314 (114%) 214 (46%) | ||||||
[22] | Direct synthesis of graphene on Cu powders + Hot rolling | Cu Cu-3 wt% graphene | 35 HB 48 (37%) | |||||||
[23] | Molecular level mixing + Spark plasma sintering | Cu Cu-1 vol% RGO Cu-2.5 vol% RGO | 102 131 (28%) | 138 195 (45%) 284 (78%) | 255 319 (25%) 335 (31%) | 40 25 15 | ||||
[27] | Ball milling + Spark plasma sintering | Cu-2.4 vol% GNPs (4 h milling, 100 rpm) Cu-2.4 vol% GNPs (4 h milling, 200 rpm) Cu-2.4 vol% GNPs (4 h milling, 300 rpm) Cu-2.4 vol% GNPs (8 h milling, 300 rpm) | 376 345 337 325 | 380 360 355 345 | ||||||
[28] | Ball milling | Equal speed rolling | Cu Cu-0.5 vol% GNPs Cu-1 vol% GNPs | 316.2 315.1 (− 0.7%) 316 (− 0.06%) | 365.5 378.2 (1%) 378.6 (4%) | 24.1 21.5 20.1 | ||||
High-ratio differential speed rolling | Cu Cu-0.5 vol% GNPs Cu-1 vol% GNPs | 314.2 323.4 (3%) 360.5 (15%) | 384.2 401.3 (5%) 425.5 (11%) | 25.1 21.1 16.4 | ||||||
[29] | Sonication + Spark plasma sintering | Cu Cu-0.8 vol% GNPs | 172 131 (− 24%) | 28 6 | ||||||
Cu Cu/0.8 vol% Ni–GNPs | 172 245 (42%) | 28 9 | ||||||||
[31] | Direct current electrodeposition | Cu Cu–GO | 1.55 GPa 2.3 (48%) | 115 127.5 (11%) | ||||||
Pulse reverse electrodeposition | Cu Cu–GO | 1.50 GPa 2.33 (54%) | 117 132.5 (13%) | |||||||
[32] | Sonication + Hot pressing | Cu Cu/0.5 vol% Ni–GNPs Cu/1 vol% Ni–GNPs | 82 126 (54%) 132 (61%) | 138 195 (41%) 268 (94%) | 230 271 (18%) 320 (39%) | |||||
[34] | Molecular level mixing + Spark plasma sintering | Cu Cu-1.3 wt% GNPs | 85 104 (22%) | 163 363 (133%) | 234 485 (107%) | 25 9 | ||||
[35] | Molecular level mixing + Spark plasma sintering | Cu Cu-0.6 wt% RGO | 128 255 (76%) | 214 361 (48%) | ||||||
[36] | Ball milling + Hot pressing | Cu-1 wt% coarse GNPs Cu-2 wt% coarse GNPs | 50.8 HV 40 HV | |||||||
Cu-1 wt% fine GNPs Cu-2 wt% fine GNPs | 61.5 HV 61.5 HV | |||||||||
[37] | Accumulative roll bonding | 0 cycles | Cu | 221 | 43 | |||||
2 cycles | Cu Cu–GNPs | 404 371 (− 8%) | 5 5 | |||||||
4 cycles | Cu Cu–GNPs | 442 421 (− 5%) | 5 5 | |||||||
6 cycles | Cu Cu–GNPs | 462.5 492 (6%) | 5 5 | |||||||
8 cycles | Cu Cu–GNPs | 475 496 (4%) | 5 5 | |||||||
[38] | Ball milling + Conventional sintering | Cu-0.5 wt% GNPs Cu-1 wt% GNPs Cu-1.5 wt% GNPs Cu-2 wt% GNPs Cu-2.5wt. %GNPs Cu-3wt. %GNPs Cu-5wt. %GNPs | 33 HV 32.4 HV 31.8 HV 30 HV 28.5 HV 27 HV 25 HV | |||||||
[39] | Molecular level mixing (with magnetic stirring) + Spark plasma sintering | Cu-0.6vol %RGO Cu-1.2vol %RGO Cu-2.4vol %RGO Cu-4.8vol %RGO | 409 437.5 409 200 | |||||||
Molecular level mixing (with high-shear mixing) + Spark plasma sintering | Cu-0.6vol %RGO Cu-1.2vol %RGO Cu-2.4vol %RGO Cu-4.8vol %RGO | 437.5 462.5 500 400 | ||||||||
[40] | Ball milling + Spark plasma sintering | Cu Cu-0.2wt. %RGO Cu-0.5wt. %RGO Cu-1wt. %RGO Cu-3wt. %RGO Cu-5wt. % | 87 HV 87 (0%) 88 (1%) 87.5 (0.6%) 68 (− 22%) 63 (− 28%) | |||||||
Cu-0.2wt. %HQG Cu-0.5wt. %HQG Cu-1wt. %HQG Cu-3wt. %HQG Cu-5wt. %HQG | 87 (0%) 97 (12%) 84 (− 4%) 73 (− 16%) 68 (− 22%) | |||||||||
[41] | Preform impregnation + HP | Cu Cu-0.3 vol% RGO Cu-1.2 vol% RGO | 97 109 (12%) | 106 158 (49%) 233 (120%) | 218 267 (22%) 308 (41%) | 22.5 25 (11%) 26 (16%) | ||||
[43] | Molecular level mixing + Spark plasma sintering | Cu Cu-0.2 vol% GNPs Cu-0.4 vol% GNPs Cu-0.6 vol% GNPs Cu-0.8 vol% GNPs Cu-2 vol% GNPs Cu-4 vol% GNPs | 1.01 GPa 1.5 (34%) 1.7 (68%) 1.75 (75%) 1.7 (68%) 1.5 (49%) 1.25 (24%) | 89 125 (40%) 135 (52%) 135 (52%) 147 (65%) 125 (40%) 110 (24%) | 142 221 (56%) 279 (97%) 310 (118%) 264 (86%) 207 (46%) 200 (41%) | 30 15 7 7 7.5 2.5 2.5 | ||||
[44] | In situ growth of graphene on Cu milled powders + Hot pressing | Cu Cu-0.4wt. %.graphene Cu-0.95wt. %graphene Cu- > 0.95wt. %graphene | 123 HV 131 (6.5%) 143 (16%) 135 (10%) | 52 103 (98%) 144 (177%) 98 (88%) | 215 251 (17%) 274 (27%) 238 (11%) | 40 44 39 37 | ||||
[47] | Stirring + Hot pressing | Cu Cu-0.1wt. %GO Cu-0.3wt. %GO Cu-0.5wt. %GO | 43 HV 48 (12%) 52 (21%) 45 (5%) | 189 194 (5%) 210 (14%) 196 (6%) | ||||||
[48] | Electrodeposition | Cu Cu/graphene | 70.4 82.5 (17%) | 174.1 242.2 (39%) | 319.2 386.7 (21%) | 14.4 2 | ||||
[49] | Stirring + Spark plasma sintering | Cu Cu-0.3wt. %GNPs | 95 172 (81%) | |||||||
Cu Cu-0.3wt. %RGO | 95 156 (64%) | |||||||||
[50] | Molecular level mixing + Spark plasma sintering | Cu Cu-0.5 vol% GNPs Cu-0.5 vol% Ni–GNPs Cu-0.5 vol% RGO | 136 174 (28%) 175 (29%) 166 (22%) | 226 256 (13%) 281 (24%) 278 (23%) | 24.3 18.1 11.9 27.9 | |||||
[51] | Stirring + Spark plasma sintering | Cu Cu-2.5wt. %RGO Cu-5wt. %RGO | 89.6 109.4 (22%) 121.2 (35%) | |||||||
[54] | Molecular level mixing + Spark plasma sintering | Cu Cu-0.05 vol% GNPs Cu-0.1 vol% GNPs Cu-0.2 vol% GNPs Cu-0.3 vol% GNPs Cu-0.4 vol% GNPs Cu-0.5 vol% GNPs Cu-0.6 vol% GNPs Cu-0.7 vol% GNPs Cu-0.8 vol% GNPs Cu-0.9 vol% GNPs Cu-1 vol% GNPs | 136 185 (36%) 210 (54%) 190 (40%) 190 (40%) 190 (40%) 175 (29%) 155 (14%) 150 (10%) 165 (21%) 155 (14%) 165 (21%) | 222 300 (35%) 315 (42%) 305 (37%) 290 (31%) 265 (19%) 255 (15%) 260 (17%) 255 (15%) 245 (10%) 255 (15%) 245 (10%) | 24 15 13.5 | |||||
Cu Cu-0.05 vol% RGO Cu-0.1 vol% RGO Cu-0.2 vol% RGO Cu-0.3 vol% RGO Cu-0.4 vol% RGO Cu-0.5 vol% RGO Cu-0.6 vol% RGO Cu-0.7 vol% RGO Cu-0.8 vol% RGO Cu-0.9 vol% RGO Cu-1 vol% RGO | 136 150 (10%) 170 (25%) 175 (29%) 172 (26.5%) 170 (25%) 168 (24%) 175 (29%) 170 (25%) 180 (32%) 185 (36%) 185 (36%) | 222 250 (35%) 270 (42%) 270 (37%) 275 (31%) 280 (19%) 280 (15%) 285 (17%) 295 (15%) 305 (10%) 305 (15%) 315 (10%) | 24 29 22.5 | |||||||
[55] | Stirring + Spark plasma sintering | Cu Cu/0.5 vol% GNPs Cu/0.5vol %Ni–GNPs Cu/0.5 vol% Cu–GNPs | 110 150 (36%) 165 (50%) 180 (64%) | 38 21 25 22 | ||||||
[56] | In situ growth of graphene on Cu milled powders + Hot pressing | Cu Cu-0.5wt. %3D-graphene | 87 290 (233%) | 227 308 (35.7%) | 38 24 | |||||
[57] | Pestle and mortar + Cold pressing | Conventional sintering | Cu Cu-0.9 vol% Gr Cu-1.8 vol% Gr Cu-2.7 vol% Gr Cu-3.6 vol% Gr | 43 HV 45 (5%) 56 (30%) 68 (58%) 82 (91%) | ||||||
Microwave sintering | Cu Cu-0.9 vol% Gr Cu-1.8 vol% Gr Cu-2.7 vol% Gr Cu-3.6 vol% Gr | 46 HV 52 (13%) 60 (30%) 74 (61%) 89 (93%) | ||||||||
[58] | In situ growth of graphene on Cu milled powders + Hot pressing + Hot rolling | Cu Cu-1.6 vol% graphene Cu-2.5 vol% graphene | 108 127 (18%) 135 (25%) | 72 122 (69%) 200 (178%) | 218 305 (40%) 378 (73%) | 42 40 32 | ||||
[60] | Ball milling + Hot pressing | Cu Cu-0.5wt. %GNPs Cu-1wt. %GNPs Cu-2wt. %GNPs | 127 HV 157 (24%) 90 (− 29%) 77 (− 39%) | 110 157 (43%) 90 (− 18%) 77 (− 30%) | 187 237 (27%) 133 (− 29%) 117 (− 37%) | 20 24 10 7 | ||||
[61] | Ball milling + Liquid phase sintering | W70Cu30 W70Cu30-0.1wt. %GO W70Cu30-0.5 wt% GO W70Cu30-1 wt% GO | 172 HB 183 (6%) 195 (13%) 208 (21%) | |||||||
[63] | Pestle and mortar + Hot pressing + Conventional sintering | Cu Cu-5 vol% RGO Cu-10 vol% RGO Cu-15 vol% RGO | 84 124 (48%) 144 (71%) 163 (94%) | |||||||
[64] | Ball milling + Hot pressing | Cu Cu/0.15 wt% Ag-RGO | 68.9HV 89.1 (29%) | |||||||
[66] | Sonication + Spark plasma sintering | Cu Cu/0.13 wt% GNPs–Ni Cu/0.43 wt% GNPs–Ni Cu/1.25 wt% GNPs–Ni | 75 125 (67%) 134 (79%) 125 (67%) | 208 232 (12%) 235 (13%) 218 (5%) | 55 57 43 27 | |||||
[67] | Molecular level mixing + Spark plasma sintering | Cu Cu/0.5 wt% GNPs Cu/0.5 wt% GNPs–VC Cu/0.5 wt% GNPs–TiC | 270 336 (24%) 270 (0%) 420 (56%) | |||||||
[69] | Vortex mixing + Vacuum filtering + Spark plasma sintering | P⊥ | P// | P⊥ | P// | |||||
Cu Cu-10 vol% GNPs Cu-20 vol% GNPs | 210 265 (26%) 195 (− 7.1%) | 210 117 (− 44.3%) 92 (− 56.2%) | 40 8 5 | 40 4 2.5 | ||||||
[71] | Molecular level mixing + Spark plasma sintering | 2.5RGO/Cu-20 °C-pH6.6(H) 2.5RGO/Cu-20 °C-pH8.1(H) 2.5RGO/Cu-50 °C-pH13.6(H) 2.5RGO/Cu-40 °C-pH13.6(H) 7.5RGO/Cu-20 °C-pH13.6(H) 5RGO/Cu-20 °C-pH13.6(H) 2.5RGO/Cu-20 °C-pH13.6(S) 2.5RGO/Cu-20 °C-pH13.6(H) | 450 400 262.5 562.5 525 637.5 525 737.5 | |||||||
[73] | Ultrasonication + Sintering | No post-processing | Cu Cu-4 vol% GNPs Cu-8 vol% GNPs | 43.2 HV 45.1 (4%) 48.6 (12.5%) | ||||||
Cold uniaxial repressing annealing | Cu Cu-4 vol% GNPs Cu-8 vol% GNPs | 45.2 HV 51.6 (14%) 55.8 (23%) | ||||||||
Hot isostatic pressing | Cu Cu-4 vol% GNPs Cu-8 vol% GNPs | 50.4 HV 57.5 (14%) 62.3 (24%) | ||||||||
[74] | Molecular level mixing + Spark plasma sintering | Cu-2.5 vol% RGO Cu-5 vol% RGO | 161.7 HV 188.8 HV | 524 608 | ||||||
[103] | Stirring + Hot pressing | Cu-2.5 wt% GNPs Cu-5 wt% GNPs Cu-7.5 wt% GNPs Cºu-10 wt% GNPs | 68.7 HV 71.7 HV 97.4 HV 56.8 HV | |||||||
[104] | Mechanical stirring + Conventional sintering | Cu(spherical)/2 wt% GNPs Cu(spherical, 8 h milling)/2 wt% GNPs Cu(dendritic, 8 h milling)/2 wt% GNPs Cu(dendritic, 16 h milling)/2 wt% GNPs | 60 HB 70 HB 75 HB 85 HB | |||||||
[114] | Electrodeposition | Cu-0.1 g/l GO Cu-0.5 g/l GO Cu-1 g/l GO | 1.28 GPa 2.10 GPa 1.41 GPa | |||||||
Cu-0.1 g/l RGO Cu-0.5 g/l RGO Cu-1 g/l RGO | 1.80 GPa 1.86 GPa 1.44 GPa | |||||||||
Cu-0.1 g/l TRGO Cu-0.5 g/l TRGO Cu-1 g/l TRGO | 1.92 GPa 2.01 GPa 1.68 GPa |
Load transfer
The effect of matrix microstructure
Strengthening efficiency
Influence of the graphene content
Influence of the processing conditions
Influence of the graphene derivative
Effect of graphene modification
Ductility
Electrical properties
Electrical conductivity
References | Processing route | Material | Relative density (%) | Electrical conductivity (% IACS) | ||
---|---|---|---|---|---|---|
[20] | Electrodeposition | Cu Cu/graphene | 76 84 (10.5%) | |||
[24] | Electrodeposition | Without stirring | Cu Cu–graphene1 Cu–graphene2 Cu–graphene3 Cu–graphene4 | 81.8 97.7 (19%) 89.5 (9%) 87.3 (7%) 82.3 (0.6%) | ||
(The content of graphene decreases when going from Cu–graphene1 to Cu–graphene4) | ||||||
With stirring | Cu Cu–graphene5 Cu–graphene6 Cu–graphene7 Cu–graphene8 | 81.8 92.2 (13%) 82.4 (0.7%) 77.6 (− 5.1%) 74.9 (− 8.4%) | ||||
(The content of graphene decreases when going from Cu–graphene5 to Cu–graphene8) | ||||||
[26] | Direct synthesis of graphene on Cu powders + Hot rolling | Cu Cu-3 wt% graphene | 100 95 (− 5%) | |||
[27] | Ball milling + Spark plasma sintering | Cu-2.4 vol% GNPs (4 h milling, 100 rpm) Cu-2.4 vol% GNPs (4 h milling, 200 rpm) Cu-2.4 vol% GNPs (4 h milling, 300 rpm) Cu-2.4 vol% GNPs (8 h milling, 300 rpm) | 94.7 93.3 91.7 91.1 | 70.4 62.8 61.4 58.1 | ||
[31] | Pulse reverse electrodeposition | Cu Cu–GO | 100 75 (− 25%) | |||
[33] | Electrodeposition | Cu (− 0.8 V, 10 min) Cu/RGO (− 0.8 V, 1 min) Cu/RGO (− 0.8 V, 5 min) Cu/RGO (− 0.8 V, 10 min) Cu/RGO (− 0.8 V, 120 min) Cu/RGO (− 1.2 V, 20 min) Cu/RGO (− 1.2 V, 30 min) Cu/RGO (− 1.2 V, 60 min) Cu/RGO (− 0.4 V, 180 min) | 44.8 53.4 (19%) 52.6 (17%) 57.2 (28%) 53.3 (19%) 55.3 (23%) 49.7 (11%) 50.1 (12%) 53.4 (19%) | |||
[36] | Ball milling + Hot pressing | Cu Cu-1 wt% coarse GNPs Cu-2 wt% coarse GNPs | 100 65 (− 35%) 62.3 (− 38%) | |||
Cu Cu-1 wt% fine GNPs Cu-2 wt% fine GNPs | 100 77.3 (− 23%) 74.7 (− 25%) | |||||
[38] | Ball milling + Conventional sintering | Cu Cu-0.5 wt% GNPs Cu-1 wt% GNPs Cu-1.5 wt% GNPs Cu-2 wt% GNPs Cu-2.5 wt% GNPs Cu-3 wt% GNPs Cu-5 wt% GNPs | 98.1 95.3 94.8 94.5 93.8 93.9 91.7 | 93 78.6 (− 15.5%) 77.1 (− 17.1%) 76.7 (− 17.5%) 75 (− 19.4%) 72.9 (− 21.6%) 72.1 (− 22.5%) 61.4 (− 34%) | ||
[41] | Preform impregnation + HP | Cu Cu-0.3 vol% RGO Cu-1.2 vol% RGO | 96 95 (− 1%) 98 (2%) | |||
[43] | Molecular level mixing + Spark plasma sintering | Cu Cu-0.2 vol% GNPs Cu-0.4 vol% GNPs Cu-0.6 vol% GNPs Cu-0.8 vol% GNPs Cu-2 vol% GNPs Cu-4 vol% GNPs | 97.5 97 96.5 96 95.6 | 92.5 90 (− 3%) 87.5 (− 5%) 88 (− 5%) 87 (− 6%) 84 (− 9%) 79.5 (− 14%) | ||
[44] | In situ growth of graphene on Cu milled powders + Hot pressing | Cu Cu-0.4 wt% graphene Cu-0.95 wt% graphene Cu- > 0.95 wt% graphene | 99.3 99.7 (0.4%) 100 (0.7%) 98.1 (− 1.3%) | |||
[48] | Electrodeposition | Cu Cu/graphene | 98.4 103.8 (5.5%) | |||
[49] | Stirring + Spark plasma sintering | Cu Cu-0.3 wt% GNPs | 99.1 82.4 (− 15%) | |||
Cu Cu-0.3 wt% RGO | 99.1 73.4 (− 26%) | |||||
[52] | Stirring + Vacuum sintering + Hot pressing | Cu Cu-0.5 wt% RGO | 99.2 95.8 (− 3%) | |||
[57] | Pestle and mortar + cold pressing | Conventional sintering | Cu Cu-0.9 vol% Gr Cu-1.8 vol% Gr Cu-2.7 vol% Gr Cu-3.6 vol% Gr | 86 88 87.4 85 84.4 | 89 92 (− 3%) 91 (− 5%) 88 (− 5%) 84 (− 6%) | |
Microwave sintering | Cu Cu-0.9 vol% Gr Cu-1.8 vol% Gr Cu-2.7 vol% Gr Cu-3.6 vol% Gr | 89 92 90 89 88 | 92 94 (2%) 92 (0%) 89 (− 3%) 86 (− 7%) | |||
[58] | In situ growth of graphene on Cu milled powders + Hot pressing + Hot rolling | Cu Cu-1.6 vol% graphene Cu-2.5 vol% graphene | 97.8 97.1 (− 1%) 93.8 (− 4%) | |||
[61] | Ball milling + Liquid phase sintering | W70Cu30 W70Cu30-0.1 wt% GO W70Cu30-0.5 wt% GO W70Cu30-1 wt% GO | 96.7 97.2 97.7 98.4 | 42 43.8 (4%) 45.7 (9%) 37.8 (− 10%) | ||
[63] | Pestle and mortar + Hot pressing + Conventional sintering | Cu Cu-5 vol% RGO Cu-10 vol% RGO Cu-15 vol% RGO | 97 96 95 94 | 98 61 (− 38%) 66 (− 33%) 63 (− 36%) | ||
[64] | Ball milling + Hot pressing | Cu Cu/0.15 wt% Ag-RGO | 81 93 (15%) | |||
[66] | Sonication + Spark plasma sintering | Cu Cu/0.13 wt% GNPs–Ni Cu/0.43 wt% GNPs–Ni Cu/1.25 wt% GNPs–Ni | 99.1 92.9 (− 6%) 79.8 (− 19%) 51.6 (− 48%) | |||
[67] | Molecular level mixing + Spark plasma sintering | Cu Cu/0.5 wt% GNPs Cu/0.5 wt% GNPs–VC Cu/0.5 wt% GNPs–TiC | 98.8 97.5 96 97.2 | 96.5 83.5 (− 13.5%) 83 (− 14%) 83 (− 14%) | ||
[71] | Molecular level mixing + Spark plasma sintering | 2.5RGO/Cu-20 °C-pH6.6(H) 2.5RGO/Cu-20 °C-pH8.1(H) 2.5RGO/Cu-50 °C-pH13.6(H) 2.5RGO/Cu-40 °C-pH13.6(H) 7.5RGO/Cu-20 °C-pH13.6(H) 5RGO/Cu-20 °C-pH13.6(H) 2.5RGO/Cu-20 °C-pH13.6(S) 2.5RGO/Cu-20 °C-pH13.6(H) | 68.07 64.09 65.16 69.04 65.79 69.12 62.86 65.67 | |||
[73] | Ultrasonication + Sintering | No post-processing | Cu Cu-2 vol% GNPs Cu-4 vol% GNPs Cu-8 vol% GNPs | 98 98.3 96.8 | 67 67 (0%) 62.5 (− 6.7%) 60 (− 10.4%) | |
Cold uniaxial repressing annealing | Cu Cu-2 vol% GNPs Cu-4 vol% GNPs Cu-8 vol% GNPs | 98.4 98.6 97.7 | 70 68 (− 2.9%) 64 (− 8.6%) 61 (− 12.9%) | |||
Hot isostatic pressing | Cu Cu-2 vol% GNPs Cu-4 vol% GNPs Cu-8 vol% GNPs | 99.9 99.8 99.5 | 78.5 77.5 (− 1.3%) 72.5 (− 7.7%) 67.5 (− 14%) | |||
[74] | Molecular level mixing + Spark plasma sintering | Cu-2.5 vol% RGO Cu-5 vol% RGO | 65.5 62 | |||
[101] | Ball milling + Spark plasma sintering | P⊥ | P// | |||
Cu-5 wt% GNPs | 39 | 5 | ||||
[102] | Ball milling + Hot pressing | Cu-1 wt% GNPs Cu-2 wt% GNPs Cu-3 wt% GNPs Cu-4 wt% GNPs Cu-5 wt% GNPs | 87 87.5 91 94.5 97 | P⊥ | P// | |
78 69 59 61 72 | 55 45 33 27 36 | |||||
[114] | Electrodeposition | Cu-0.1 g/l GO Cu-0.5 g/l GO Cu-1 g/GO | 36 33.3 31.3 | |||
Cu-0.1 RGO Cu-0.5 g/l RGO Cu-1 g/RGO | 56 53 49.7 | |||||
Cu-0.1 g/l TRGO Cu-0.5 g/l TRGO Cu-1 g/l TRGO | 58.3 58 56 |
Influence of graphene content
Influence of processing conditions
Influence of graphene derivative and size
Effect of graphene modification
Arc erosion
Thermal properties
Thermal conductivity
References | Processing route | Material | Relative density (%) | Thermal conductivity (W/mK) | ||||||
---|---|---|---|---|---|---|---|---|---|---|
[19] | Layer-by layer assembling of 6 Cu/graphene layers on a Cu substrate | − 23 °C | 27 °C | 77 °C | ||||||
Cu substrate Cu/graphene layers | 435 155 (− 64%) | 420 150 (− 64%) | 370 120 (− 68%) | |||||||
[21] | Electrodeposition | Cu Cu/graphene | − 23 °C | 27 °C | 77 °C | |||||
400 510 (28%) | 380 460 (21%) | 370 440 (19%) | ||||||||
[24] | Electrodeposition | Without stirring | Cu Cu–graphene1 Cu–graphene2 Cu–graphene3 Cu–graphene4 | 380 500 (32%) 480 (26%) 460 (21%) 440 (16%) | ||||||
(The content of graphene decreases when going from Cu–graphene1 to Cu–graphene4) | ||||||||||
With stirring | Cu Cu–graphene5 Cu–graphene6 Cu–graphene7 Cu–graphene8 | 380 500 (32%) 480 (26%) 460 (21%) 440 (16%) | ||||||||
(The content of graphene decreases when going from Cu–graphene5 to Cu–graphene8) | ||||||||||
[30] | CVD on both sides of | 9-μm-thick Cu foil | Cu Annealed Cu Cu with single-layer graphene Cu with multilayer graphene | 290 329.5 369.5 364.3 | ||||||
25-μm-thick Cu foil | Cu Annealed Cu Cu with single-layer graphene Cu with multilayer graphene | 313 337.2 363 376.4 | ||||||||
[43] | Molecular level mixing + Spark plasma sintering | P⊥ | P// | |||||||
Cu | 97.5 | 373 | 373 | |||||||
Cu-0.2 vol% GNPs | 97 | 362 (− 3%) | 345 (− 8%) | |||||||
Cu-0.4 vol% GNPs | ||||||||||
Cu-0.6 vol% GNPs | ||||||||||
Cu-0.8 vol% GNPs Cu-2 vol% GNPs Cu-4 vol% GNPs | 96.5 96 95.6 | 356 (− 5%) 335 (− 10%) 270 (− 28%) | 338 (− 9%) 232 (− 38%) 232 (− 38%) | |||||||
[47] | Stirring + Hot pressing | Cu Cu-0.1 wt% GO Cu-0.3 wt% GO Cu-0.5 wt% GO | 360 370 (3%) 396 (10%) 383 (6%) | |||||||
[48] | Electrodeposition | Cu Cu/graphene | 286.5 300.5 (5%) | |||||||
[53] | Direct deposition of graphene on Cu foil + Stacking + Spark plasma sintering | P⊥ | P// | |||||||
Cu Cu/graphene | 361 352 (− 2.5%) | 358 321 (− 10%) | ||||||||
Ball milling + Spark plasma sintering | Cu Cu-1 vol% GNPs Cu-3 vol% GNPs Cu-5 vol% GNPs Cu-10 vol% GNPs | 100 97.9 | 390 359 (− 8%) 340 (− 13%) 292 (− 25%) 221 (− 43%) | |||||||
[59] | Pasting on Cu foil | Cu Cu/89 wt% GNPs Cu/89 wt% GNPs–N | 333.53 445.91 (34%) 542.9 (63%) | |||||||
[64] | Ball milling + Hot pressing | Cu Cu/0.15 wt% Ag-RGO | 282 296 (15%) | |||||||
[67] | Molecular level mixing + Spark plasma sintering | Cu Cu/0.5 wt% GNPs Cu/0.5 wt% GNPs–VC Cu/0.5 wt% GNPs–TiC | 97.8 96 95.8 96.3 | 359 294 (− 18%) 304 (− 15%) 311 (− 13%) | ||||||
[68] | Sonication and vortex mixing + Vacuum infiltration + Spark plasma sintering | P⊥ | P// | |||||||
Cu Cu-10 vol% GNPs Cu-20 vol% GNPs Cu30 vol% GNPs | 340 375 (10%) 410 (21%) 450 (32%) | 340 150 (− 10%) 75 (− 21%) 58 (− 32%) | ||||||||
[70] | Vacuum infiltration + Spark plasma sintering | Vortex mixing | P⊥ | P// | ||||||
Cu Cu-5 vol% large-sized GNPs Cu-12 vol% large-sized GNPs Cu-20 vol% large-sized GNPs Cu-27 vol% large-sized GNPs Cu-35 vol% large-sized GNPs | 350 358 (2%) 371 (6%) 392 (12%) 475 (36%) 525 (50%) | 350 311.5 (− 11%) 277 (− 21%) 238.5 (− 32%) 211.5 (− 40%) 200 (− 43%) | ||||||||
Cu-35 vol% small-sized GNPs | 275 (− 21%) | |||||||||
Ball milling | Cu-35 vol% large-sized GNPs | 425 (21%) | ||||||||
Vortex mixing + Air-drying + Spark plasma sintering | Cu Cu-5 vol% large-sized GNPs Cu-12 vol% large-sized GNPs Cu-20 vol% large-sized GNPs Cu-27 vol% large-sized GNPs Cu-35 vol% large-sized GNPs | P⊥ | P// | |||||||
350 333 (− 5%) 312.5 (− 11%) 287.5 (− 18%) 279 (− 20%) 267 (− 24%) | 350 277 (− 21%) 188.5 (− 46%) 169 (− 52%) 127 (− 64%) 108 (− 69%) | |||||||||
[101] | Ball milling + Spark plasma sintering | P⊥ | P// | |||||||
Cu-5 wt% GNPs | 178 | 94 | ||||||||
[102] | Ball milling + Hot pressing | P⊥ | P// | |||||||
Cu-1 wt% GNPs Cu-2 wt% GNPs Cu-3 wt% GNPs Cu-4 wt% GNPs Cu-5 wt% GNPs | 87 87.5 91 94.5 97 | 253 243 230 220 297 | 170 160 140 133 190 |
Influence of graphene content
Influence of processing conditions
Influence of graphene size
Effect of graphene modification
Coefficient of thermal expansion
Tribological properties
References | Processing route | Material | Hardness | COF | Wear rate (mm3/m) | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
[43] | Molecular level mixing + Spark plasma sintering | Cu Cu-0.2 vol% GNPs Cu-0.4 vol% GNPs Cu-0.6 vol% GNPs Cu-0.8 vol% GNPs Cu-2 vol% GNPs Cu-4 vol% GNPs | 0.6 0.6 0.6 0.48 0.34 0.34 | ||||||||||||
10 N | 20 N | 30 N | 10 N | 20 N | 30 N | ||||||||||
[57] | Pestle and mortar + Cold pressing | Conventional sintering | Cu Cu-0.9 vol% Gr Cu-1.8 vol% Gr Cu-2.7 vol% Gr Cu-3.6 vol% Gr | 43 HV 45 HV 56 HV 68 HV 82 HV | 0.52 0.36 0.34 0.29 0.22 | 0.54 0.38 0.35 0.35 0.24 | 0.59 0.41 0.38 0.38 0.27 | 398.2 153.7 74.3 31.7 17.3 | 717.3 325.3 151.1 60.7 34.6 | 1207.5 420.6 216.4 80.5 53.2 | |||||
10 N | 20 N | 30 N | 10 N | 20 N | 30 N | ||||||||||
Microwave sintering | Cu Cu-0.9 vol% Gr Cu-1.8 vol% Gr Cu-2.7 vol% Gr Cu-3.6 vol% Gr | 46 HV 52 HV 60 HV 74 HV 89 HV | 0.51 0.35 0.33 0.30 0.21 | 0.52 0.39 0.33 0.36 0.22 | 0.54 0.39 0.36 0.39 0.26 | 276.0 123.9 55.8 22.7 12.8 | 577.2 255.2 119.1 42.8 23.0 | 991.2 352.4 136.5 63.0 35.7 | |||||||
[67] | Molecular level mixing + Spark plasma sintering | Cu/0.5 wt% GNPs Cu/0.5 wt% GNPs–VC Cu/0.5 wt% GNPs–TiC | 0.2 0.16 0.08 | ||||||||||||
2 N | 3 N | 4 N | 5 N | 2 N | 3 N | 4 N | 5 N | ||||||||
[72] | Electrodeposition | Cu Cu-0.3 wt% RGO Cu-0.5 wt% RGO Cu-1.1 wt% RGO | 117 HV 136 HV 141 HV 151 HV | 0.413 0.258 0.324 0.308 | 0.403 0.258 0.292 0.292 | 0.397 0.242 0.282 0.282 | 0.387 0.242 0.271 0.271 | 81.8·10−5 58.3·10−5 12.7·10−5 8.1·10−5 | 72.1·10−5 5.8·10−5 7.7·10−5 6.7·10−5 | 75·10−5 4.4·10−5 6.7·10−5 5.3·10−5 | 78.6·10−5 3.1·10−5 5.0·10−5 4.4·10−5 | ||||
2 N | 2 N | ||||||||||||||
[103] | Stirring + Hot pressing | Cu-2.5 vol% GNPs Cu-5 vol% GNPs Cu-7.5 vol% GNPs Cu-10 vol% GNPs | 68.7 HV 71.7 HV 97.4 HV 56.8 HV | 0.24 0.21 0.19 0.17 | 13.6·10−4 7.7·10−4 2.3·10−4 3.6·10−4 | ||||||||||
[114] | Electrodeposition | Cu-0.1 g/l GO Cu-0.5 g/l GO Cu-1 g/l GO | 1.28 GPa 2.10 GPa 1.41 GPa | 0.059 0.105 0.129 | |||||||||||
Cu-0.1 g/l RGO Cu-0.5 g/l RGO Cu-1 g/l RGO | 1.80 GPa 1.86 GPa 1.44 GPa | 0.068 0.150 0.170 | |||||||||||||
Cu-0.1 g/l TRGO Cu-0.5 g/l TRGO Cu-1 g/l TRGO | 1.92 GPa 2.01 GPa 1.68 GPa | 0.043 0.050 0.061 | |||||||||||||
[115] | Ball milling + Conventional sintering | Cu Cu-1 vol% GNPs | 0.42 0.35 | ||||||||||||
[156] | Ball milling + Spark plasma sintering | Cu Cu-3 vol% GO Cu-5 vol% GO Cu-10 vol% GO | 1.21 0.58 0.61 0.46 |