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Erschienen in: Journal of Materials Science: Materials in Electronics 6/2019

02.03.2019

Photoelectrical characteristics of novel Ru(II) complexes based photodiode

verfasst von: W. A. Farooq, Elsayed Elgazzar, A. Dere, O. Dayan, Z. Serbetci, Abdulkerim Karabulut, M. Atif, Atif Hanif

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 6/2019

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Abstract

The Ru(II) complex was prepared by the reaction of 4-chloro-N-[(E)-(pyridin-2-yl) methylidene] benzene-1-sulfonamide, [RuCl2(p-cymene)]2 and 2,2′-(pyridine-2,6-diyl) bis(1H-benzimidazole) compounds by simple chemical technique. Al/ruthenium(II) complex/p-Si/Al was characterized by electronic devices and its electrical properties were studied as photodiode. In dark, the photodiode parameters such as potential barrier \(\varphi\) and ideality factor \({\text{n}}\) were investigated from current–voltage (I–V) plot and confirmed by using Cheung–Cheung and Norde’s models. Under illumination effect, the synthesized device shows high photosensitivity and the charge carriers increased based on the trapped state created under the conduction band. It was observed from conductance–voltage (G–V) and resistance–voltage (Rs–V) measurements that the series resistance \({R_s}\) of the diode is decreased dramatically and its conductance \(G\) is increased by applied electric field.

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Metadaten
Titel
Photoelectrical characteristics of novel Ru(II) complexes based photodiode
verfasst von
W. A. Farooq
Elsayed Elgazzar
A. Dere
O. Dayan
Z. Serbetci
Abdulkerim Karabulut
M. Atif
Atif Hanif
Publikationsdatum
02.03.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 6/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-00845-9

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