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Optical and Quantum Electronics

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01.10.2019

Composition dependence of structural and optical properties of Ge_xSe_100−x semiconducting thin films

verfasst von: S. Moustafa, Mansour Mohamed, M. A. Abdel-Rahim

Erschienen in: Optical and Quantum Electronics | Ausgabe 10/2019

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Abstract

The studied thin films of Ge_xSe_100−x compositions were synthesized with thermal evaporation technique at room temperature. The effect of composition on the structure of the prepared films was characterized by X-ray diffraction and scanning electron microscopy. The stoichiometry of the studied compositions was examined by energy dispersive X-ray spectroscopy. The film thickness and refractive index were calculated by Swanepoel’s method. The structural analysis showed that the as-prepared Ge_xSe_100−x (x = 10, 15, 20 and 30 at.%) films exhibit the amorphous state while other films containing 25, 35 and 40 at.% of Ge are polycrystalline. On the other hand, the GeSe and Se crystalline phases are obtained for the annealed films. The analysis of the optical spectra showed that \(E_{g}\) increases with increasing Ge content up to a x = 30 at.% and then decreases with further increase of the Ge concentration. Other many optical parameters such as optical conductivity, dispersion energy and dissipation factor were determined and strongly affected by the variation of the composition.

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Titel: Composition dependence of structural and optical properties of GexSe100−x semiconducting thin films
verfasst von: S. Moustafa
Mansour Mohamed
M. A. Abdel-Rahim
Publikationsdatum: 01.10.2019
Verlag: Springer US
Erschienen in: Optical and Quantum Electronics / Ausgabe 10/2019
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-019-2049-8

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