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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 5/2023

22.07.2023

Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET

verfasst von: M. Muthu Manjula, R. Ramesh

Erschienen in: Journal of Computational Electronics | Ausgabe 5/2023

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Abstract

This work investigates the low-frequency noise performance of a 2H-type monolayer/bilayer molybdenum ditelluride (MoTe2) double-gate MOSFET. A hybrid simulation technique involving both QuantumWise ATK and Sentaurus TCAD tools has been used to simulate the device characteristics. First, density functional theory (DFT) has been used to simulate the electrical characteristics of monolayer and bilayer 2H–MoTe2. The parameters (bandgap and effective mass, mobility etc.) obtained using the atomistic simulator tool are exported into Sentaurus TCAD to simulate the drain current characteristics. We have used the kinetic velocity model and quantum model to account for the ballistic mobility and quantum effects in the device. The noise simulation for the bilayer MoTe2 is computed using the impedance field method. Noise parameters such as noise power spectral density (SID) as a function of frequency and bias, and noise figure have also been simulated.
Vorheriger Artikel Analytical modeling and quasi-static characterization of a lithium niobate (LiNbO3)-based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET
Nächster Artikel Compact drain current model of a double-gate raised buried oxide TFET for integrated circuit application

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Metadaten
Titel
Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET
verfasst von
M. Muthu Manjula
R. Ramesh
Publikationsdatum
22.07.2023
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 5/2023
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-023-02074-0

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