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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 3/2024

01.03.2024

Red phosphorus/WSe2 heterojunction based self-powered UV photodetector

verfasst von: Tulika Bajpai, Ajay Kumar Dwivedi, R. K. Nagaria, Shweta Tripathi

Erschienen in: Optical and Quantum Electronics | Ausgabe 3/2024

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Abstract

This letter reports Al/Red Phosphorus (RP)/WSe2/ITO heterostructure based self-powered UV photodetector designed by low-cost solution technique. The p–n junction is formed between p-type WSe2 and n-type red phosphorus (RP) material deposited over ITO coated PET substrate. The designed photodetector device shows Responsivity \({{\text{R}}}_{{\text{s}}}\)(A/W) of 0.23 and 0.12 (voltage bias ~ 2 V) at 300 nm and 350 nm wavelength, respectively. The rise and fall time of the device are obtained as ~ 0.19 µs and ~ 0.12 µs in UV region.
Vorheriger Artikel Image acquisition system based on optical sensors for swimmer technical analysis and simulation
Nächster Artikel Quantum splitting of multi-qubit gates

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Metadaten
Titel
Red phosphorus/WSe2 heterojunction based self-powered UV photodetector
verfasst von
Tulika Bajpai
Ajay Kumar Dwivedi
R. K. Nagaria
Shweta Tripathi
Publikationsdatum
01.03.2024
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 3/2024
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-023-05976-2

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