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Journal of Electroceramics
Erschienen in: Journal of Electroceramics 1-4/2017

24.06.2017

Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

verfasst von: Hong-Yu Chen, Stefano Brivio, Che-Chia Chang, Jacopo Frascaroli, Tuo-Hung Hou, Boris Hudec, Ming Liu, Hangbing Lv, Gabriel Molas, Joon Sohn, Sabina Spiga, V. Mani Teja, Elisa Vianello, H.-S. Philip Wong

Erschienen in: Journal of Electroceramics | Ausgabe 1-4/2017

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Abstract

Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This paper reviews the development of RS device technology including the fundamental physics, material engineering, three-dimension (3D) integration, and bottom-up fabrication. The device operation, physical mechanisms for resistive switching, reliability metrics, and memory cell selector candidates are summarized from the recent advancement in both industry and academia. Options for 3D memory array architectures are presented for the mass storage application. Finally, the potential application of bottom-up fabrication approaches for effective manufacturing is introduced.
Vorheriger Artikel Memristive computing devices and applications
Nächster Artikel Modeling resistive switching materials and devices across scales

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Metadaten
Titel
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
verfasst von
Hong-Yu Chen
Stefano Brivio
Che-Chia Chang
Jacopo Frascaroli
Tuo-Hung Hou
Boris Hudec
Ming Liu
Hangbing Lv
Gabriel Molas
Joon Sohn
Sabina Spiga
V. Mani Teja
Elisa Vianello
H.-S. Philip Wong
Publikationsdatum
24.06.2017
Verlag
Springer US
Erschienen in
Journal of Electroceramics / Ausgabe 1-4/2017
Print ISSN: 1385-3449
Elektronische ISSN: 1573-8663
DOI
https://doi.org/10.1007/s10832-017-0095-9

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