Ausgabe 12/2001
Inhalt (12 Artikel)
Paramagnetic defects in silicon carbide crystals irradiated with gamma-ray quanta
I. V. Ilyin, E. N. Mokhov, P. G. Baranov
Interaction of hydrogen with radiation defects in p-Si crystals
O. V. Feklisova, N. A. Yarykin, E. B. Yakimov, J. Weber
electrical properties of the proton-irradiated semi-insulating GaAs:Cr
V. N. Brudnyi, A. I. Potapov
Dynamics of nonequilibrium gratings induced in silicon films by femtosecond laser pulses
M. F. Galyautdinov, V. S. Lobkov, S. A. Moiseev, I. V. Negrashov
Radiative recombination via direct optical transitions in In1 −x GaxAs (0≤x≤0.16) solid solutions
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin
Effect of structural imperfection on the spectrum of deep levels in 6H-SiC
A. A. Lebedev, D. V. Davydov, A. S. Tregubova, E. V. Bogdanova, M. P. Shcheglov, M. V. Pavlenko
The contact of metal with silicon carbide: Schottky barrier height in relation to SiC polytype
S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, Yu. M. Tairov
Ostwald ripening of quantum-dot nanostructures
R. D. Vengrenovich, Yu. V. Gudyma, S. V. Yarema
Kinetics of exciton photoluminescence in low-dimensional silicon structures
A. V. Sachenko, É. B. Kaganovich, É. G. Manoilov, S. V. Svechnikov
Renormalization of energy spectrum of quantum dots under vibrational resonance conditions
A. V. Fedorov, A. V. Baranov, A. Itoh, Y. Masumoto
Scanning tunneling spectroscopy of a-C:H and a-C:(H, Cu) films prepared by magnetron sputtering
T. K. Zvonareva, V. I. Ivanov-Omskii, V. V. Rozanov, L. V. Sharonova
InAsSb/InAsSbP double-heterostructure lasers emitting in the 3–4 µm spectral range
T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, Yu. P. Yakovlev