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Semiconductors

Ausgabe 12/2001

Inhalt (12 Artikel)

Electronic and Optical Properties of Semiconductors

Paramagnetic defects in silicon carbide crystals irradiated with gamma-ray quanta

I. V. Ilyin, E. N. Mokhov, P. G. Baranov

Electronic and Optical Properties of Semiconductors

Interaction of hydrogen with radiation defects in p-Si crystals

O. V. Feklisova, N. A. Yarykin, E. B. Yakimov, J. Weber

Electronic and Optical Properties of Semiconductors

electrical properties of the proton-irradiated semi-insulating GaAs:Cr

V. N. Brudnyi, A. I. Potapov

Electronic and Optical Properties of Semiconductors

Dynamics of nonequilibrium gratings induced in silicon films by femtosecond laser pulses

M. F. Galyautdinov, V. S. Lobkov, S. A. Moiseev, I. V. Negrashov

Electronic and Optical Properties of Semiconductors

Radiative recombination via direct optical transitions in In1 −x GaxAs (0≤x≤0.16) solid solutions

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Electronic and Optical Properties of Semiconductors

Effect of structural imperfection on the spectrum of deep levels in 6H-SiC

A. A. Lebedev, D. V. Davydov, A. S. Tregubova, E. V. Bogdanova, M. P. Shcheglov, M. V. Pavlenko

Semiconductor Structures, Interfaces, and Surfaces

The contact of metal with silicon carbide: Schottky barrier height in relation to SiC polytype

S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, Yu. M. Tairov

Low-Dimensional Systems

Ostwald ripening of quantum-dot nanostructures

R. D. Vengrenovich, Yu. V. Gudyma, S. V. Yarema

Low-Dimensional Systems

Kinetics of exciton photoluminescence in low-dimensional silicon structures

A. V. Sachenko, É. B. Kaganovich, É. G. Manoilov, S. V. Svechnikov

Low-Dimensional Systems

Renormalization of energy spectrum of quantum dots under vibrational resonance conditions

A. V. Fedorov, A. V. Baranov, A. Itoh, Y. Masumoto

Amorphous, Vitreous, and Porous Semiconductors

Scanning tunneling spectroscopy of a-C:H and a-C:(H, Cu) films prepared by magnetron sputtering

T. K. Zvonareva, V. I. Ivanov-Omskii, V. V. Rozanov, L. V. Sharonova

Physics of Semiconductor Devices

InAsSb/InAsSbP double-heterostructure lasers emitting in the 3–4 µm spectral range

T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, Yu. P. Yakovlev

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