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Semiconductors

Inhalt (27 Artikel)

ELECTRONIC PROPERTIES OF SEMICONDUCTORS

Calculation of Wave Functions of Resonant Acceptor States in Narrow-Gap CdHgTe Compounds

M. S. Zholudev, D. V. Kozlov, N. S. Kulikov, A. A. Razova, V. I. Gavrilenko, S. V. Morozov

SURFACES, INTERFACES, AND THIN FILMS

Nonresonance Phase Conjugation of Light in Optically Pumped ZnO Films

A. N. Gruzintsev

SURFACES, INTERFACES, AND THIN FILMS

A Comparative Study on CdS Film Formation under Variable and Steady Bath-Temperature Conditions

R. K. K. G. R. G. Kumarasinghe, W. G. C. Kumarage, R. P. Wijesundera, N. Kaur, E. Comini, B. S. Dassanayake

SURFACES, INTERFACES, AND THIN FILMS

Effect of Oxygen Flow Rate in Zinc Oxide Radio Frequency Magnetron Sputtering on the Structural and Optical Properties of ZnO|PEDOT:PSS Inorganic|Organic Hetero-Junction

B. Boroomand Nasab, A. Kosarian, N. Alaei Sheini

SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA

Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

Zh. V. Smagina, A. V. Novikov, M. V. Stepikhova, V. A. Zinovyev, E. E. Rodyakina, A. V. Nenashev, S. M. Sergeev, A. V. Peretokin, P. A. Kuchinskaya, M. V. Shaleev, S. A. Gusev, A. V. Dvurechenskii

SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA

Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

S. B. Donaev, B. E. Umirzakov

SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA

Investigation of Core-Shell Nanoparticle in a Confined Space of a Periodic Substrate Based on SERS

N. Amani, N. N. Azizkandi

PHYSICS OF SEMICONDUCTOR DEVICES

On the Current Dependence of the Injection Efficiency and the Relative Contribution of the Escape Rate and Internal Optical Loss to Saturation of the Power–Current Characteristics of High-Power Pulsed Lasers (λ = 1.06 μm)

A. V. Rozhkov

PHYSICS OF SEMICONDUCTOR DEVICES

Investigation into Radiation Effects in a p-Channel MOS Transistor

A. V. Kuzminova, N. A. Kulikov, V. D. Popov

PHYSICS OF SEMICONDUCTOR DEVICES

Study of the Spatial and Current Dynamics of Optical Loss in Semiconductor Laser Heterostructures by Optical Probing

P. S. Gavrina, O. S. Soboleva, A. A. Podoskin, A. E. Kazakova, V. A. Kapitonov, S. O. Slipchenko, N. A. Pikhtin

FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES

Influence of the Formation Temperature of the Morphology of por-Si Formed by Pd-Assisted Chemical Etching

G. O. Silakov, O. V. Volovlikova, S. A. Gavrilov, A. V. Zheleznyakova, A. A. Dudin

FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES

Investigation of the Effect of Atomic Composition on the Plasma-Chemical Etching Rate of Silicon Nitride in High-Power Transistors Based on an AlGaN/GaN Heterojunction

V. I. Garmash, V. E. Zemlyakov, V. I. Egorkin, A. V. Kovalchuk, S. Y. Shapoval

FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES

Interaction of Fluorocarbon with Silicon Monoxide and Processes of SiC Nanowire Formation

E. V. Astrova, V. P. Ulin, A. V. Parfeneva, A. V. Nashchekin, V. N. Nevedomskiy, M. V. Baidakova

FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES

Implantation of Silicon Ions into Sapphire: Low Doses

N. E. Belova, S. G. Shemardov, S. S. Fanchenko, E. A. Golovkova, O. A. Kondratev

FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES

Calculating Silicon-Amorphization Doses under Medium-Energy Light-Ion Irradiation

E. V. Okulich, V. I. Okulich, D. I. Tetelbaum

FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES

Micro-Structural and Thermoelectric Characterization of Zinc-Doped In0.6Se0.4 Crystal Grown by Direct Vapour Transport Method

P. B. Patel, H. N. Desai, J. M. Dhimmar, B. P. Modi

FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES