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2018 | OriginalPaper | Buchkapitel

20. Semiconductors

verfasst von : Werner Martienssen

Erschienen in: Springer Handbook of Materials Data

Verlag: Springer International Publishing

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Abstract

The organization of this chapter follows a two-step approach. The first step corresponds to searching for the substance of interest, that is, the relevant group of substances. The second step corresponds to the physical property of interest.
This chapter has three sections, characterized by the groups of the Periodic Table that the constituent elements belong to. The first section, Sect. 20.1, deals with the elements of Group IV of the Periodic Table and semiconducting binary compounds between elements of this group (IV–IV compounds). The second section, 20.2, treats the semiconducting binary compounds between the elements of Groups III and V (III–V compounds); Sect. 20.3 treats compounds between the elements of Groups II and VI (II–VI compounds). These two sections are subdivided further according to the first element in the formula of the compound.
The elements and compounds treated in Sect. 20.1 (Group IV and IV–IV compounds) are treated as one group; the data in the tables are given for the whole group in all cases. In Sect. 20.2 (III–V compounds) and 20.3 (II–VI compounds), data are given separately for each subdivision of those sections.
For each group of substances, the physical properties are organized into four classes. These are:
1.
Crystal structure, mechanical and thermal properties
 
2.
Electronic properties
 
3.
Transport properties
 
4.
Electromagnetic and optical properties
 
These property classes, finally, are subdivided into individual properties, which are described in the text, tables, and figures.

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Zurück zum Zitat V.M. Muzhdaba, A. Ya Nashel’skii, P.V. Tamarin, S.S. Shalyt: Fiz. Tverd. Tela 10, 2866 (1968) V.M. Muzhdaba, A. Ya Nashel’skii, P.V. Tamarin, S.S. Shalyt: Fiz. Tverd. Tela 10, 2866 (1968)
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Zurück zum Zitat G.A. Slack: Nonmetallic crystals with high thermal conductivity, J. Phys. Chem. Solids 34, 321 (1973)CrossRef G.A. Slack: Nonmetallic crystals with high thermal conductivity, J. Phys. Chem. Solids 34, 321 (1973)CrossRef
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Zurück zum Zitat J. Pastrnak, L. Roskovcova: Refraction index measurements on aluminum nitride single crystals, Phys. Status Solidi 14, K5 (1966)CrossRef J. Pastrnak, L. Roskovcova: Refraction index measurements on aluminum nitride single crystals, Phys. Status Solidi 14, K5 (1966)CrossRef
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Zurück zum Zitat B. Monemar: Determination of band gap and refractive index of AIP from optical absorption, Solid State Commun. 8, 1295 (1970)CrossRef B. Monemar: Determination of band gap and refractive index of AIP from optical absorption, Solid State Commun. 8, 1295 (1970)CrossRef
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Zurück zum Zitat S. Adachi: GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (World Scientific, Singapore 1994)CrossRef S. Adachi: GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (World Scientific, Singapore 1994)CrossRef
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Zurück zum Zitat W.J. Turner, W.E. Reese: Infrared lattice bands in AlSb, Phys. Rev. 127, 126 (1962)CrossRef W.J. Turner, W.E. Reese: Infrared lattice bands in AlSb, Phys. Rev. 127, 126 (1962)CrossRef
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Zurück zum Zitat A.U. Sheleg, V.A. Savastenko: Determinaton of elastic constants of hexagonal crystals from measured values of dynamic atomic displacements, Vesti Akad. Nauk BSSR, Ser. Fiz. Mat. Nauk 3, 126 (1976) A.U. Sheleg, V.A. Savastenko: Determinaton of elastic constants of hexagonal crystals from measured values of dynamic atomic displacements, Vesti Akad. Nauk BSSR, Ser. Fiz. Mat. Nauk 3, 126 (1976)
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Zurück zum Zitat T. Soma: The thermal expansion of GaP below room temperature, Solid State Commun. 34, 375 (1980)CrossRef T. Soma: The thermal expansion of GaP below room temperature, Solid State Commun. 34, 375 (1980)CrossRef
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Zurück zum Zitat A. Debernardi, M. Cardona: Isotopic effects on the lattice constant in compound semiconductors by perturbation theory: An ab initio calculation, Phys. Rev. B 54, 11305 (1996)CrossRef A. Debernardi, M. Cardona: Isotopic effects on the lattice constant in compound semiconductors by perturbation theory: An ab initio calculation, Phys. Rev. B 54, 11305 (1996)CrossRef
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Zurück zum Zitat T. Azuhata, T. Matsunaga, K. Shimada, K. Yoshida, T. Sota, K. Suzuki, S. Nakamura: Optical phonons in GaN, Physica B 219/220, 493 (1996)CrossRef T. Azuhata, T. Matsunaga, K. Shimada, K. Yoshida, T. Sota, K. Suzuki, S. Nakamura: Optical phonons in GaN, Physica B 219/220, 493 (1996)CrossRef
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Zurück zum Zitat V.Y. Davydov, Y.E. Kitaev, I.N. Goncharuk, A.N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M.B. Smirnov, A.P. Mirgorodsky, R.A. Evarestov: Phonon dispersion and Raman scattering in hexagonal GaN and AlN, Phys. Rev. B 58, 12899 (1998)CrossRef V.Y. Davydov, Y.E. Kitaev, I.N. Goncharuk, A.N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M.B. Smirnov, A.P. Mirgorodsky, R.A. Evarestov: Phonon dispersion and Raman scattering in hexagonal GaN and AlN, Phys. Rev. B 58, 12899 (1998)CrossRef
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Zurück zum Zitat J.L. Yarnell, J.L. Warren, R.G. Wenzel, P.J. Dean: Neutron Inelastic Scattering (International Atomic Energy Agency, Vienna 1968) p. 301 J.L. Yarnell, J.L. Warren, R.G. Wenzel, P.J. Dean: Neutron Inelastic Scattering (International Atomic Energy Agency, Vienna 1968) p. 301
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Zurück zum Zitat P.H. Borcherds, K. Kunc, G.F. Alfrey, R.L. Hall: The lattice dynamics of gallium phosphide, J. Phys. C: Solid State Phys. 12, 4699 (1979) P.H. Borcherds, K. Kunc, G.F. Alfrey, R.L. Hall: The lattice dynamics of gallium phosphide, J. Phys. C: Solid State Phys. 12, 4699 (1979)
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Zurück zum Zitat C. Eckl, P. Pavone, J. Fritsch, U. Schröder: In: The Physics of Semiconductors, Vol. 1, ed. by M. Scheffler, R. Zimmermann (World Scientific, Singapore 1996) p. 229 C. Eckl, P. Pavone, J. Fritsch, U. Schröder: In: The Physics of Semiconductors, Vol. 1, ed. by M. Scheffler, R. Zimmermann (World Scientific, Singapore 1996) p. 229
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Zurück zum Zitat D. Strauch, B. Dorner: Phonon dispersion in GaAs, J. Phys. Condens. Matter 2, 1457 (1990)CrossRef D. Strauch, B. Dorner: Phonon dispersion in GaAs, J. Phys. Condens. Matter 2, 1457 (1990)CrossRef
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Zurück zum Zitat M.K. Farr, J.G. Traylor, S.K. Sinha: Lattice dynamics of GaSb, Phys. Rev. B 11, 1587 (1975)CrossRef M.K. Farr, J.G. Traylor, S.K. Sinha: Lattice dynamics of GaSb, Phys. Rev. B 11, 1587 (1975)CrossRef
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Zurück zum Zitat M. Ilegems, H.C. Montgomery: Electrical properties of n-type vapor-grown gallium nitride, J. Phys. Chem. Solids 34, 885 (1972)CrossRef M. Ilegems, H.C. Montgomery: Electrical properties of n-type vapor-grown gallium nitride, J. Phys. Chem. Solids 34, 885 (1972)CrossRef
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Zurück zum Zitat Y.C. Kao, O. Eknoyan: Electron and hole carrier mobilities for liquid phase epitaxially grown GaP in the temperature range 200–550 K, J. Appl. Phys. 54, 2468 (1983)CrossRef Y.C. Kao, O. Eknoyan: Electron and hole carrier mobilities for liquid phase epitaxially grown GaP in the temperature range 200–550 K, J. Appl. Phys. 54, 2468 (1983)CrossRef
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Zurück zum Zitat J.S. Blakemore: Semiconducting and other major properties of gallium arsenide, J. Appl. Phys. 53, R123 (1982)CrossRef J.S. Blakemore: Semiconducting and other major properties of gallium arsenide, J. Appl. Phys. 53, R123 (1982)CrossRef
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Zurück zum Zitat R.A. Stradling, R.A. Wood: The temperature dependence of the band-edge effective masses of InSb, InAs and GaAs as deduced from magnetophonon magnetoresistance measurements, J. Phys. C 3, L94 (1970) R.A. Stradling, R.A. Wood: The temperature dependence of the band-edge effective masses of InSb, InAs and GaAs as deduced from magnetophonon magnetoresistance measurements, J. Phys. C 3, L94 (1970)
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Zurück zum Zitat E.K. Sichel, J.I. Pankove: Thermal conductivity of GaN, K, J. Phys. Chem. Solids 38(330), 25–360 (1977) E.K. Sichel, J.I. Pankove: Thermal conductivity of GaN, K, J. Phys. Chem. Solids 38(330), 25–360 (1977)
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Zurück zum Zitat M.H. Kim, S.S. Bose, B.J. Skromme, B. Lee, G.E. Stillman: Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition, J. Electron. Mater. 20, 671 (1991)CrossRef M.H. Kim, S.S. Bose, B.J. Skromme, B. Lee, G.E. Stillman: Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition, J. Electron. Mater. 20, 671 (1991)CrossRef
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Zurück zum Zitat M.G. Holland: In: Proc. 7th Int. Conf. Phys. Semicond., Paris (Dunod, Paris 1964) p. 1161 M.G. Holland: In: Proc. 7th Int. Conf. Phys. Semicond., Paris (Dunod, Paris 1964) p. 1161
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Zurück zum Zitat M.G. Holland: In: Proc. Int. Conf. Phys. Semicond., Paris (Dunod, Paris 1964) p. 713 M.G. Holland: In: Proc. Int. Conf. Phys. Semicond., Paris (Dunod, Paris 1964) p. 713
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Zurück zum Zitat E. Ejder: Refractive index of GaN, Phys. Status Solidi (a) 6, K39 (1971)CrossRef E. Ejder: Refractive index of GaN, Phys. Status Solidi (a) 6, K39 (1971)CrossRef
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Zurück zum Zitat B. Clerjaud, C. Naud, B. Deveaud, B. Lambert, B. Plot, C. Bremond, C. Benjeddou, G. Guillot, A. Nouailhat: The acceptor level of vanadium in II-V compounds, J. Appl. Phys. 58, 4207 (1985)CrossRef B. Clerjaud, C. Naud, B. Deveaud, B. Lambert, B. Plot, C. Bremond, C. Benjeddou, G. Guillot, A. Nouailhat: The acceptor level of vanadium in II-V compounds, J. Appl. Phys. 58, 4207 (1985)CrossRef
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Zurück zum Zitat G.A. Samara: Temperature and pressure dependences of the dielectric constants of semiconductors, Phys. Rev. B 27, 3494 (1983)CrossRef G.A. Samara: Temperature and pressure dependences of the dielectric constants of semiconductors, Phys. Rev. B 27, 3494 (1983)CrossRef
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Zurück zum Zitat K. Haruna, H. Maeta, K. Ohashi, T. Koike: The thermal expansion coefficient and Gruneisen parameter of InP crystal at low temperatures, J. Phys. C 20, 5275 (1987) K. Haruna, H. Maeta, K. Ohashi, T. Koike: The thermal expansion coefficient and Gruneisen parameter of InP crystal at low temperatures, J. Phys. C 20, 5275 (1987)
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Zurück zum Zitat P.W. Sparks, C.A. Swenson: Thermal expansions from 2 to 40∘K of Ge, Si, and four III-V compounds, Phys. Rev. 163, 779 (1967)CrossRef P.W. Sparks, C.A. Swenson: Thermal expansions from 2 to 40K of Ge, Si, and four III-V compounds, Phys. Rev. 163, 779 (1967)CrossRef
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Zurück zum Zitat D.F. Gibbons: Thermal expansion of some crystals with the diamond structure, Phys. Rev. 112, 779 (1958)CrossRef D.F. Gibbons: Thermal expansion of some crystals with the diamond structure, Phys. Rev. 112, 779 (1958)CrossRef
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Zurück zum Zitat P.H. Borcherds, G.F. Alfrey, D.H. Saunderson, A.D.B. Woods: Phonon dispersion curves in indium phosphide, J. Phys. C 8, 2022 (1975) P.H. Borcherds, G.F. Alfrey, D.H. Saunderson, A.D.B. Woods: Phonon dispersion curves in indium phosphide, J. Phys. C 8, 2022 (1975)
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Zurück zum Zitat A. Mooradian, G.B. Wright: First order Raman effect in III–V compounds, Solid State Commun. 4, 431 (1966)CrossRef A. Mooradian, G.B. Wright: First order Raman effect in III–V compounds, Solid State Commun. 4, 431 (1966)CrossRef
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Zurück zum Zitat J. Fritsch, P. Pavone, U. Schröder: Ab initio calculation of the phonon dispersion in bulk InP and in the InP(110) surface, Phys. Rev. B 52, 11326 (1995)CrossRef J. Fritsch, P. Pavone, U. Schröder: Ab initio calculation of the phonon dispersion in bulk InP and in the InP(110) surface, Phys. Rev. B 52, 11326 (1995)CrossRef
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Zurück zum Zitat N.S. Orlova: Variation of phonon dispersion curves with temperature in indium arsenide measured by X-ray thermal diffuse scattering, Phys. Status Solidi (b) 119, 541 (1983)CrossRef N.S. Orlova: Variation of phonon dispersion curves with temperature in indium arsenide measured by X-ray thermal diffuse scattering, Phys. Status Solidi (b) 119, 541 (1983)CrossRef
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Zurück zum Zitat R. Carles, N. Saint-Cricq, J.B. Renucci, M.A. Renucci, A. Zwick: Second-order Raman scattering in InAs, Phys. Rev. B 22, 4804 (1980)CrossRef R. Carles, N. Saint-Cricq, J.B. Renucci, M.A. Renucci, A. Zwick: Second-order Raman scattering in InAs, Phys. Rev. B 22, 4804 (1980)CrossRef
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Zurück zum Zitat W.J. Turner, W.E. Reese, G.D. Pettit: Exciton absorption and emission in InP, Phys. Rev. 136, A1467 (1964)CrossRef W.J. Turner, W.E. Reese, G.D. Pettit: Exciton absorption and emission in InP, Phys. Rev. 136, A1467 (1964)CrossRef
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Zurück zum Zitat S. Logothetidis, L. Vina, M. Cardona: Temperature dependence of the dielectric function and the interband critical points of InSb, Phys. Rev. B 31, 947 (1985)CrossRef S. Logothetidis, L. Vina, M. Cardona: Temperature dependence of the dielectric function and the interband critical points of InSb, Phys. Rev. B 31, 947 (1985)CrossRef
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Zurück zum Zitat Y.J. Jung, B.H. Kim, H.J. Lee, J.C. Wolley: Electrical transport and energy-band structure in InAs, Phys. Rev. 26, 3151 (1982)CrossRef Y.J. Jung, B.H. Kim, H.J. Lee, J.C. Wolley: Electrical transport and energy-band structure in InAs, Phys. Rev. 26, 3151 (1982)CrossRef
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Zurück zum Zitat O.G. Folberth, O. Madelung, H. Weiss: Die elektrischen Eigenschaften von Indiumsarsenid, Z. Naturforsch. 9a, 954 (1954) O.G. Folberth, O. Madelung, H. Weiss: Die elektrischen Eigenschaften von Indiumsarsenid, Z. Naturforsch. 9a, 954 (1954)
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Zurück zum Zitat O. Madelung, H. Weiss: Die elektrischen Eigenschaften von InAs II, Z. Naturforsch. 9a, 527 (1954) O. Madelung, H. Weiss: Die elektrischen Eigenschaften von InAs II, Z. Naturforsch. 9a, 527 (1954)
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Zurück zum Zitat T.L. Tansley, C.P. Foley: Electron mobility in indium nitride, Electron. Lett. 20, 1087 (1984)CrossRef T.L. Tansley, C.P. Foley: Electron mobility in indium nitride, Electron. Lett. 20, 1087 (1984)CrossRef
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Zurück zum Zitat W. Walukiewicz, J. Lagowski, L. Jastrzebski, P. Rava, M. Lichtensteiger, C.H. Gatos, H.C. Gatos: Electron mobility and free-carrier absorption in InP; determination of the compensation ratio, J. Appl. Phys. 51, 2659 (1980)CrossRef W. Walukiewicz, J. Lagowski, L. Jastrzebski, P. Rava, M. Lichtensteiger, C.H. Gatos, H.C. Gatos: Electron mobility and free-carrier absorption in InP; determination of the compensation ratio, J. Appl. Phys. 51, 2659 (1980)CrossRef
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Zurück zum Zitat J.D. Wiley: Semiconductors and Semimetals, Vol. 10 (Academic Press, New York 1975), ed. by R. K. Willardson, A. C. Beer J.D. Wiley: Semiconductors and Semimetals, Vol. 10 (Academic Press, New York 1975), ed. by R. K. Willardson, A. C. Beer
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Zurück zum Zitat U. Busch, E. Steigmeier: Helv. Phys. Acta 34, 1 (1961) U. Busch, E. Steigmeier: Helv. Phys. Acta 34, 1 (1961)
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Zurück zum Zitat H.J. Hrostowski, F.J. Morin, T.H. Geballe, G.H. Wheatley: Hall effect and conductivity of InSb, Phys. Rev. 100, 1672 (1955)CrossRef H.J. Hrostowski, F.J. Morin, T.H. Geballe, G.H. Wheatley: Hall effect and conductivity of InSb, Phys. Rev. 100, 1672 (1955)CrossRef
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Zurück zum Zitat N.I. Volokobinskaya, V.V. Galavanov, D.N. Nasledov: Electrical and galvanomagnetic properties of high purity InSb, Sov. Phys. Solid State 1, 687 (1959), (English Transl.) N.I. Volokobinskaya, V.V. Galavanov, D.N. Nasledov: Electrical and galvanomagnetic properties of high purity InSb, Sov. Phys. Solid State 1, 687 (1959), (English Transl.)
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Zurück zum Zitat N.I. Volokobinskaya, V.V. Galavanov, D.N. Nasledov: Fiz. Tverd. Tela 1, 756 (1959) N.I. Volokobinskaya, V.V. Galavanov, D.N. Nasledov: Fiz. Tverd. Tela 1, 756 (1959)
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Zurück zum Zitat D.L. Rode: Electron Transport in InSb, InAs, and InP, Phys. Rev. 3, 3287 (1971)CrossRef D.L. Rode: Electron Transport in InSb, InAs, and InP, Phys. Rev. 3, 3287 (1971)CrossRef
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Zurück zum Zitat S.A. Aliev, A. Ya Nashelskii, S.S. Shalyt: Thermal conductivity and thermoelectric power of n-type InP at low temperatures, Sov. Phys. Solid State (English Transl.) 7, 1287 (1965) S.A. Aliev, A. Ya Nashelskii, S.S. Shalyt: Thermal conductivity and thermoelectric power of n-type InP at low temperatures, Sov. Phys. Solid State (English Transl.) 7, 1287 (1965)
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Zurück zum Zitat S.A. Aliev, A. Ya Nashelskii, S.S. Shalyt: Fiz. Tverd. Tela 7, 1590 (1965) S.A. Aliev, A. Ya Nashelskii, S.S. Shalyt: Fiz. Tverd. Tela 7, 1590 (1965)
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Zurück zum Zitat H. Katzman, J. Moss, W.F. Libby: The heat capacity of indium antimonide II, J. Phys. Chem. Solids 32, 2786 (1971)CrossRef H. Katzman, J. Moss, W.F. Libby: The heat capacity of indium antimonide II, J. Phys. Chem. Solids 32, 2786 (1971)CrossRef
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Zurück zum Zitat K.-O. Park, J.M. Sivertsen: Temperature dependence of the thermal expansivity of annealed BaO, J. Am. Ceram. Soc. 62, 218 (1979)CrossRef K.-O. Park, J.M. Sivertsen: Temperature dependence of the thermal expansivity of annealed BaO, J. Am. Ceram. Soc. 62, 218 (1979)CrossRef
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Zurück zum Zitat G.K. White, O.L. Anderson: The temperature variation of the dielectric constant of ‘‘pure’’ CaF2, SrF2, BaF2, and MgO, J. Appl. Phys. 37, 430 (1966)CrossRef G.K. White, O.L. Anderson: The temperature variation of the dielectric constant of ‘‘pure’’ CaF2, SrF2, BaF2, and MgO, J. Appl. Phys. 37, 430 (1966)CrossRef
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Zurück zum Zitat C.M. Osburn, R.W. Vest: Electrical properties of single crystals, bicrystals, and polycrystals of MgO, J. Am. Ceram. Soc. 54, 428 (1971)CrossRef C.M. Osburn, R.W. Vest: Electrical properties of single crystals, bicrystals, and polycrystals of MgO, J. Am. Ceram. Soc. 54, 428 (1971)CrossRef
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Zurück zum Zitat D.S. Kupperman, H. Weinstock, Y. Chen: Thermal conductivity of additively colored MgO, J. Low Temp. Phys. 14, 277 (1974)CrossRef D.S. Kupperman, H. Weinstock, Y. Chen: Thermal conductivity of additively colored MgO, J. Low Temp. Phys. 14, 277 (1974)CrossRef
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Zurück zum Zitat N.N. Kovalev, M.V. Krasin’kova: Sov. Phys. Solid State 16, 1960 (1975) N.N. Kovalev, M.V. Krasin’kova: Sov. Phys. Solid State 16, 1960 (1975)
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Zurück zum Zitat O. Kamada, T. Takizawa, T. Sakurai: A high temperature X-ray diffractometer using a solar furnace, Jpn. J. Appl. Phys. 10, 485 (1971)CrossRef O. Kamada, T. Takizawa, T. Sakurai: A high temperature X-ray diffractometer using a solar furnace, Jpn. J. Appl. Phys. 10, 485 (1971)CrossRef
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Zurück zum Zitat R.R. Reeber, G.W. Powell: Thermal expansion of ZnS from 2∘ to 317∘K, J. Appl. Phys. 38, 1531 (1967)CrossRef R.R. Reeber, G.W. Powell: Thermal expansion of ZnS from 2 to 317K, J. Appl. Phys. 38, 1531 (1967)CrossRef
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Zurück zum Zitat R. Helbig, P. Wagner: Halleffekt und Anisotropie der Beweglichkeit der Elektronen in ZnO, J. Phys. Chem. Solids 35, 327 (1974)CrossRef R. Helbig, P. Wagner: Halleffekt und Anisotropie der Beweglichkeit der Elektronen in ZnO, J. Phys. Chem. Solids 35, 327 (1974)CrossRef
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Zurück zum Zitat P. Wagner: Ph.D. Thesis (Universität Erlangen-Nürnberg 1978) P. Wagner: Ph.D. Thesis (Universität Erlangen-Nürnberg 1978)
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Zurück zum Zitat G.A. Slack: In: Physics and Chemistry of II–VI Compounds, ed. by M. Aven, J.S. Prener (1967) p. 557 G.A. Slack: In: Physics and Chemistry of II–VI Compounds, ed. by M. Aven, J.S. Prener (1967) p. 557
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Zurück zum Zitat K. Sato, S. Adachi: Optical properties of ZnTe, J. Appl. Phys. 73, 926 (1993)CrossRef K. Sato, S. Adachi: Optical properties of ZnTe, J. Appl. Phys. 73, 926 (1993)CrossRef
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Zurück zum Zitat L. Ward: Zinc selenide (ZnSe) zinc telluride (ZnTe). In: Handbook Optical Constants of Solids, Vol. 2, ed. by E.D. Palik (Academic, New York 1991) p. 737 L. Ward: Zinc selenide (ZnSe) zinc telluride (ZnTe). In: Handbook Optical Constants of Solids, Vol. 2, ed. by E.D. Palik (Academic, New York 1991) p. 737
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Zurück zum Zitat S. Ozaki, S. Adachi: Optical constants of cubic ZnS, Jpn. J. Appl. Phys. 32, 5008 (1993)CrossRef S. Ozaki, S. Adachi: Optical constants of cubic ZnS, Jpn. J. Appl. Phys. 32, 5008 (1993)CrossRef
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Zurück zum Zitat T.B. Kobyakov, G.S. Pado: Sov. Phys. Solid State 9, 1707 (1968), (English Transl.) T.B. Kobyakov, G.S. Pado: Sov. Phys. Solid State 9, 1707 (1968), (English Transl.)
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Zurück zum Zitat T.M. Bieniewski, S.J. Czyzak: Refractive indexes of single hexagonal ZnS and CdS crystals, J. Opt. Soc. Am. 53, 496 (1963)CrossRef T.M. Bieniewski, S.J. Czyzak: Refractive indexes of single hexagonal ZnS and CdS crystals, J. Opt. Soc. Am. 53, 496 (1963)CrossRef
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Zurück zum Zitat Q. Guo, M. Ikejira, M. Nishio, H. Ogawa: Optical properties of zinc telluride in vacuum ultraviolet region, Solid State Commun. 100, 813 (1996)CrossRef Q. Guo, M. Ikejira, M. Nishio, H. Ogawa: Optical properties of zinc telluride in vacuum ultraviolet region, Solid State Commun. 100, 813 (1996)CrossRef
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Zurück zum Zitat H. Yoshikawa, S. Adachi: Optical constants of ZnO, Jpn. J. Appl. Phys. 36, 6237 (1997)CrossRef H. Yoshikawa, S. Adachi: Optical constants of ZnO, Jpn. J. Appl. Phys. 36, 6237 (1997)CrossRef
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Zurück zum Zitat Y.F. Tsay, S.S. Mitra, J.F. Vetelino: Temperature dependence of energy gaps in some II–VI compounds, J. Phys. Chem. Solids 34, 2167 (1973)CrossRef Y.F. Tsay, S.S. Mitra, J.F. Vetelino: Temperature dependence of energy gaps in some II–VI compounds, J. Phys. Chem. Solids 34, 2167 (1973)CrossRef
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Zurück zum Zitat J.L. Birman, H. Samelson, A. Lempicki: Reflection and emission of polarized light in ZnS and CdS, GT E Res. Dev. J. 1, 1 (1961) J.L. Birman, H. Samelson, A. Lempicki: Reflection and emission of polarized light in ZnS and CdS, GT E Res. Dev. J. 1, 1 (1961)
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Zurück zum Zitat M. Cardona, G. Harbeke: Optical properties and band structure of Wurtzite-type crystals and rutile, Phys. Rev. A 137, 1467 (1965)CrossRef M. Cardona, G. Harbeke: Optical properties and band structure of Wurtzite-type crystals and rutile, Phys. Rev. A 137, 1467 (1965)CrossRef
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Zurück zum Zitat S. Adachi, T. Taguchi: Optical properties of ZnSe, Phys. Rev B 43, 9569 (1991)CrossRef S. Adachi, T. Taguchi: Optical properties of ZnSe, Phys. Rev B 43, 9569 (1991)CrossRef
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Zurück zum Zitat K.C. Mills: The heat capacities of Ga2O3(c), Tl2O3(c), ZnO(c), and CdO(c), High Temp. High Press. 4, 371 (1972) K.C. Mills: The heat capacities of Ga2O3(c), Tl2O3(c), ZnO(c), and CdO(c), High Temp. High Press. 4, 371 (1972)
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Zurück zum Zitat V.S. Oskotskii, I.B. Kobyakov, A.V. Solodukhin: Fiz. Tverd. Tela 22, 1479 (1980) V.S. Oskotskii, I.B. Kobyakov, A.V. Solodukhin: Fiz. Tverd. Tela 22, 1479 (1980)
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Zurück zum Zitat V.S. Oskotskii, I.B. Kobyakov, A.V. Solodukhin: Sov. Phys. Solid State (English Transl.) 22, 861 (1980) V.S. Oskotskii, I.B. Kobyakov, A.V. Solodukhin: Sov. Phys. Solid State (English Transl.) 22, 861 (1980)
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Zurück zum Zitat J.R. Chelikowsky, M.L. Cohen: Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors, Phys. Rev. B 14, 556 (1976)CrossRef J.R. Chelikowsky, M.L. Cohen: Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors, Phys. Rev. B 14, 556 (1976)CrossRef
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Metadaten
Titel
Semiconductors
verfasst von
Werner Martienssen
Copyright-Jahr
2018
Verlag
Springer International Publishing
DOI
https://doi.org/10.1007/978-3-319-69743-7_20

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