Ausgabe 1/2003
Inhalt (8 Artikel)
Regular Issue Paper
Inductively coupled plasma reactive ion etching of SiC single crystals using NF3-based gas mixtures
Hyun-Joon Choi, Byung-Teak Lee
Regular Issue Paper
Microstructural effect on the creep strength of a Sn-3.5%Ag solder alloy
Kepeng Wu, Noboru Wade, Jie Cui, Kazuya Miyahara
Regular Issue Paper
Electroless Cu deposition process on TiN for ULSI interconnect fabrication via Pd/Sn colloid activation
H. P. Fong, Y. Wu, Y. Y. Wang, C. C. Wan
Regular Issue Paper
Growth of ternary InAlP and InGaP self-assembled quantum dots by metalorganic chemical vapor deposition
J. H. Ryou, R. D. Dupuis
Regular Issue Paper
Microstructure of GaN grown by lateral confined epitaxy 2. GaN on patterned sapphire
Feng Wu, Shai Zamir, Boris Meyler, Joseph Salzman, Yuval Golan
Regular Issue Paper
Time and temperature dependence on rapid thermal annealing of molecular beam epitaxy grown Ga0.8In0.2N0.01As0.99 quantum wells analyzed using photoluminescence
Sridhar Govindaraju, Jason M. Reifsnider, Michael M. Oye, Archie L. Holmes Jr.
Regular Issue Paper
Structural characterization of GaAs1−xBix alloy by rutherford backscattering spectrometry combined with the channeling technique
Katsumi Takahiro, Kiyoshi Kawatsura, Kunishige Oe, Fumitaka Nishiyama
Regular Issue Paper
Prevention of spalling by the self-formed reaction barrier layer on controlled collapse chip connections under bump metallization
C. Y. Liu, S. J. Wang