Ausgabe 1/1998
Inhalt (24 Artikel)
Nonequilibrium segregation of phosphorus in the system silicon dioxide-silicon
O. V. Aleksandrov, N. N. Afonin
High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature
N. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
Photoluminescence of cadmium telluride recrystallized by nanosecond pulsed laser irradiation
V. N. Babentsov, N. I. Tarbaev
Filling of dislocation levels in strong electric fields
Z. A. Veliev
Influence of the intensity of gg irradiation on the photoluminescence of GaAs:Te
V. I. Dubovik, V. A. Bogdanova, N. A. Davletkil’deev, N. A. Semikolenova, O. A. Shutyak
Optical characteristics of 1.18-eV luminescence band complexes in n-GaAs:Sn(Si): Results of a photoluminescence study with polarized resonant excitation
A. A. Gutkin, M. A. Reshchikov, V. E. Sedov, T. Piotrowski, J. Pultorak
Intrinsic defect states in PbTe single-crystal films grown by laser-modulated epitaxy
S. V. Plyatsko
Manganese-related recombination centers in epitaxial GaAs grown from a bismuth melt
K. S. Zhuravlev, T. S. Shamirzaev, N. A. Yakusheva
Effect of selenium on the galvanomagnetic properties of the diluted magnetic semiconductor Hg1−x MnxTe1−y Sey
V. A. Kulbachinskii, I. A. Churilov, P. D. Maryanchuk, R. A. Lunin
On C-V profiling near an isotypic heterojunction
V. I. Zubkov, M. A. Melnik, A. V. Solomonov
Impact ionization luminescence of InGaN/AlGaN/GaN p-n-heterostructures
A. N. Kovalev, F. I. Manyakhin, V. E. Kudryashov, A. N. Turkin, A. É. Yunovich
Calculation of the Schottky barrier height at the early stage of formation of the (silicon carbide)-(metallic submonolayer) contact
S. Yu. Davydov, A. A. Lebedev, S. K. Tikhonov
Photoelectric properties of n-CdS/p-InP heterojunctions
V. M. Botnaryuk, L. V. Gorchak, I. I. Diaconu, V. Yu. Rud’, Yu. V. Rud’
Photoelectric properties of structures based on TlInS2 single crystals
S. Iida, N. Mamedov, V. Yu. Rud’, Yu. V. Rud’
Temperature anomalies of the work function and relaxation of the surface conductivity of n-type Si in the presence of structural defects
N. I. Bochkareva, A. V. Klochkov
Commensurate and incommensurate indium phases on a (111)A InAs surface
Yu. G. Galitsyn, V. G. Mansurov, I. I. Marahovka, I. P. Petrenko
Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
A. F. Tsatsul’nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, Chao Chen, P. S. Kop’ev, Zh. I. Alfërov, V. N. Petrov, G. É. Tsirlin, D. Bimberg
Exciton polaritons in long-period quantum-well structures
M. R. Vladimirova, E. L. Ivchenko, A. V. Kavokin
Interimpurity light absorption in thin wires of III-V-type semiconductors
A. P. Dzhotyan, É. M. Kazaryan, A. S. Chirkinyan
Characterization of GaAs/ InxGa1−x As quantum-dot heterostructures by electrical and optical methods
V. Ya. Aleshkin, D. M. Gaponova, S. A. Gusev, V. M. Danil’tsev, Z. F. Krasil’nik, A. V. Murel, L. V. Paramonov, D. G. Revin, O. I. Khrykin, V. I. Shashkin
Relaxation of light-induced metastable state of boron-doped p-type a-Si:H
A. G. Kazanskii, E. V. Larina
Relation between the optoelectronic parameters of amorphous hydrogenated silicon films deposited at high temperatures and their microstructure
G. J. Adriaenssens, W. Grevendonk, O. A. Golikova
Generation in a microstrip-resonator-stabilized double-barrier resonant tunneling structure
A. A. Beloushkin, Yu. A. Efimov, A. S. Ignat’ev, A. L. Karuzskii, V. N. Murzin, A. V. Perestoronin, G. K. Rasulova, A. M. Tskhovrebov, E. G. Chizhevskii