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Erschienen in:
10.06.2021
Structural and electrical properties of donor-doped NBT system synthesized by microwave-assisted solid-state reaction route
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 13/2021
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Abstract
A-site donor-doped NBT systems (Na0.5Bi0.5)1-xMxTi(1-x/4)O3 (M = La and Sm) were synthesized by microwave-assisted solid-state reaction route. Effects of doping concentration on phase, microstructure, dielectric, and ferroelectric properties were characterized and discussed. X-ray diffraction study revealed the existence of single perovskite phase in all the studied ceramics and indicated the solubility limit of La and Sm in NBT system is up to 3 mol%. Doping of La and Sm in NBT system acted as grain growth inhibitors, because donor doping results in formation of cation vacancies which concentrate near grain boundaries and weaken the mass transportation. Doped NBT systems, with higher densities, showed higher dielectric constant and lower leakage current density. Compared to parent NBT system, transition temperature (Tm) shifts toward higher temperature side with the increase of doping concentration. 1 mol% Sm-doped NBT system showed lesser diffusivity and better ferroelectric properties compared to rest of the systems.