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Erschienen in: Journal of Materials Science: Materials in Electronics 5/2017

21.11.2016

Studying electrical characteristics of Al2O3/PVP nano-hybrid composites as OFET gate dielectric

verfasst von: B. Soltani, M. Babaeipour, A. Bahari

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 5/2017

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Abstract

Al2O3/PVP nano-hybrid composite samples are synthesized using Sol–Gel method at 80 °C. Weight percent of poly 4-vinyl phenol (PVP) and aluminum oxide is 0.0, 0.28, 0.56, and 0.84. To study the nano-structural and electrical characteristics, X-ray diffraction, Fourier transfer infrared radiation, scanning electron microscopy, and atomic force microscopy are used. Dielectric constant of the samples is calculated using GPS 132A technique. The results show that the highest amounts of dielectric constant at the frequency of 120 and 1 kHz are related to Al2O3/0.28 wt% PVP (AP 0.28 wt%). PVP (k = 35) and Al2O3/0.56 wt% PVP (AP 0.56 wt%). PVP (k = 26) nano-composite samples, respectively. Therefore, at the frequency of 120 kHz, AP 0.28 wt% PVP nano-composite sample, due to having higher equivalent oxide thickness, less roughness, ohmic properties, smaller size of nano-crystallites (Scherrer diameter of 45 nm), higher dielectric constant, and as a result less leakage current, is recommended as the gate dielectric for the future of organic field effect transistors (OFET).

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Metadaten
Titel
Studying electrical characteristics of Al2O3/PVP nano-hybrid composites as OFET gate dielectric
verfasst von
B. Soltani
M. Babaeipour
A. Bahari
Publikationsdatum
21.11.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 5/2017
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-6064-2

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