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Erschienen in: Journal of Materials Science: Materials in Electronics 9/2021

16.04.2021

The enhancement of energy storage performances via combining relaxor behaviors with the crucial point of solubility limit

verfasst von: Zhifeng Shi, Yaping Liu, Fei Guo, Shifeng Zhao

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2021

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Abstract

(1-x)(0.96Na0.5Bi0.5TiO3-0.04BiMnO3)-xLaMnO3 ternary solid solution films were fabricated by Sol–gel methods. It takes advantage of the large polarization from 0.96NBT-0.04BMO limit solid solution at crucial point of solubility limit to enhance energy density. And LaMnO3 was introduced to improve the energy storage efficiency via the enhancement of relaxor behaviors. It is shown that the relaxor behaviors had been enhanced, and a large energy storage density of 87.9 J/cm3 and efficiency of 56.5% were achieved for 0.85(NBT-BMO)-0.15LM films, with increase ratio of 4.9% and 13.3% respectively than 0.96NBT-0.04BMO solubility limit films. However, when LaMnO3 is beyond a certain limit, the breakdown strength is reduced due to the formation of the current channel. Thus it suggests a alternative method that combining relaxor behaviors with solubility limit films, which provides a way to regulate the energy storage performances for film capacitors.

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Metadaten
Titel
The enhancement of energy storage performances via combining relaxor behaviors with the crucial point of solubility limit
verfasst von
Zhifeng Shi
Yaping Liu
Fei Guo
Shifeng Zhao
Publikationsdatum
16.04.2021
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 9/2021
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-05893-8

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