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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 9/2021

15.04.2021

Photo-absorption and electron collection of field-assisted GaN nanohole array photocathode

verfasst von: Lei Liu, Feifei Lu, Jian Tian, Xingyue Zhangyang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2021

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Abstract

The light absorption and photo-generation rate under different periods, filling factors (FF), hole depth and inclination angles are studied. The NHA exhibits a larger light absorption compared with the planar film, which is about 99.99973%. Based on the three-dimensional continuity equation, the quantum efficiency (QE) and collection efficiency (CE) of the field-assisted GaN NHA and the graded compositional AlGaN NHA are calculated. The QE and CE of the GaN NHA with a period of 200 nm, a filling factor of 0.05, an inclined angle of 10°, and a field intensity of 2 V/μm are 62.7% and 62.6%, respectively. In addition, the graded compositional AlGaN structure has a more improved effect on the vertical NHA. Compared with the uniform GaN NHA, the electron collection of AlGaN NHA ratio is increased by 2.4 times. The design principles proposed in this work provide guidance to reasonable parameters for the application of NHA photocathodes.
Vorheriger Artikel The enhancement of energy storage performances via combining relaxor behaviors with the crucial point of solubility limit
Nächster Artikel Effect of A-site off-stoichiometry on the microstructural, structural, and electromechanical properties of lead-free tetragonal 0.80Na0.5Bi0.5TiO3–0.20BaTiO3 (NBT–20BT) piezoceramic

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Metadaten
Titel
Photo-absorption and electron collection of field-assisted GaN nanohole array photocathode
verfasst von
Lei Liu
Feifei Lu
Jian Tian
Xingyue Zhangyang
Publikationsdatum
15.04.2021
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 9/2021
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-05894-7

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