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Microsystem Technologies
Erschienen in: Microsystem Technologies 1/2008

01.01.2008 | Technical Paper

Two photon absorption coefficients and processing parameters for photoresists

verfasst von: Zahidur R. Chowdhury, Robert Fedosejevs

Erschienen in: Microsystem Technologies | Ausgabe 1/2008

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Abstract

The two photon absorption (TPA) process is currently used to write high resolution microstructures for a variety of applications. Key parameters required to predict the final structure formation for this process are experimentally determined and reported in this article for two commercially available resists, Ormocore and SU-8. The measured TPA coefficients measured at 800 nm for Ormocore and SU-8 are 27 ± 6 and 28 ± 6 cm TW−1, respectively. For Ormocore and SU-8 the dose required to write 35 and 50 μm high structures, respectively, were 54 ± 8 and 3.5 ± 0.5 J cm−3, respectively, and the measured contrasts were 15 ± 2 μm per decade J−1 cm3 and 55 ± 8 μm per decade J−1 cm3, respectively.
Vorheriger Artikel Fabrication of DNA purification microchip integrated with mesoporous matrix based on MEMS technology
Nächster Artikel Post-buckling dynamic behavior of self-assembled 3D microstructures

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Metadaten
Titel
Two photon absorption coefficients and processing parameters for photoresists
verfasst von
Zahidur R. Chowdhury
Robert Fedosejevs
Publikationsdatum
01.01.2008
Verlag
Springer-Verlag
Erschienen in
Microsystem Technologies / Ausgabe 1/2008
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-007-0394-1

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