A 10 nm MOS and its applications

A 10 nm Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Complementary Metal Oxide Semiconductor (CMOS) are presented in this paper. A channel length of 24.6 nm and an optimized threshold voltage of 0.40961 v at drain voltage of 0.005 v are accomplished in this paper. The CMOS is considered using the 10 nm MOSFET and the improved characteristics of the device have been showcased. Indium Gallium Arsenide (In_0.53Ga_0.47As) is passed down as semiconductor material and Hafnium Oxide (HfO₂) as oxide layer representative in the both n and p type10nm MOSFET. The Observation regarding the electrical features of the device has been carried out. The parameters which are taken for the observation are supplied gate voltage (V_GS), Drain to Source Voltage(V_DS), Threshold Voltage(V_TH) and Drain Current(I_D). The study regarding the device electrical characteristics has revealed that, it is working at an minimal threshold voltage (V_TH) 0.40961v, drive current (I_ON) of 21.945 × 10⁻⁶A um⁻¹, and leakage current (I_OFF) of 14.853 × 10⁻¹¹ A um⁻¹.