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Microsystem Technologies

Ausgabe 11/2021

Special Issue On More Than Moore Microsystems

Inhalt (20 Artikel)

Editorial

Preface

Jyotsna Kumar Mandal, Angsuman Sarkar

Technical Paper

Characterization and analysis of low-noise GaN-HEMT based inverter circuits

Sritoma Paul, Shubham Mondal, Angsuman Sarkar

Technical Paper

Effect of high-K dielectric on differential conductance and transconductance of ID-DG MOSFET following Ortiz-Conde model

Arpan Deyasi, Angsuman Sarkar, Krishnendu Roy, Anal Roy Chowdhury

Technical Paper

Performance analysis of gas sensing device and corresponding IoT framework in mines

Subhrapratim Nath, Anup Dey, Prithviraj Pachal, Jamuna Kanta Sing, Subir Kumar Sarkar

Technical Paper

Effect of band non-parabolicity on energy sub-band profile for nano-dimensional MOSFET

Mainak Mukherjee, Manash Chanda, Angshuman Sarkar, Anup Dey

Technical Paper

Silicon photovoltaic cell based on graphene oxide as an active layer

Pramila Mahala, Navneet Gupta, Sumitra Singh

Technical Paper

Saliency detection via outlier pursuit in compress domain (SDOPCD)

Sujit Das, Jyotsna Kumar Mandal

Technical Paper

A 10 nm MOS and its applications

Jyotsna Kumar Mandal, Raktim Chakraborty

Technical Paper

Favorable influence of ssDNA-functionalized SWCNT on the navigation pattern of C. elegans

Swati Sinha, Siddharth Shaw, Kunal Biswas, Debashis De, Samir Chandra Das, Angsuman Sarkar, Jaya Bandyopadhyay

Technical Paper

Noise analysis of double gate composite InAs based HEMTs for high frequency applications

R. Poornachandran, N. Mohan Kumar, R. Saravana Kumar, S. Baskaran

Technical Paper

Design and performance study on a new biaxial micro-accelerometer with variable cross-section beam

Jianghong Sun, Jialin Wang, Keke Gao, Xueping He, Feng Gao, Yufan He, Naizheng Li, Junjian Wang

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