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Microsystem Technologies
Erschienen in: Microsystem Technologies 11/2021

22.07.2020 | Technical Paper

Noise analysis of double gate composite InAs based HEMTs for high frequency applications

verfasst von: R. Poornachandran, N. Mohan Kumar, R. Saravana Kumar, S. Baskaran

Erschienen in: Microsystem Technologies | Ausgabe 11/2021

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Abstract

The quantitative analysis of microwave noise available in the double gate (DG) high electron transistors of mobility (HEMT) is reported in this paper. For this analysis, the InGaAs/InAs/InGaAs DG-HEMT composite channel delivers an eminent low analog/RF signals and noise output. The proposed 30 nm gate length system with high Indium (x = 0.3) concentrations in the channel leads to a maximum frequency of oscillation (fmax) of 785 GHz and a cut-off frequency (fT) of about 586 GHz. Using the Green’s method in the TCAD simulator tool, the microwave noise of electrodes is characterized by spectral density under different biasing conditions are evaluated. In accordance with the equivalent noise resistant of 480Ω approximately around 586 GHz this proposed device displays a minimum noise figure (NFmin) of 1.62 dB for Vgs = 0.3 V and Vds = 0.5 V which is relative low. This study demonstrates that DG-HEMT is well suited to applications that involve low power and low noise with higher levels of indium in the channel.
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Metadaten
Titel
Noise analysis of double gate composite InAs based HEMTs for high frequency applications
verfasst von
R. Poornachandran
N. Mohan Kumar
R. Saravana Kumar
S. Baskaran
Publikationsdatum
22.07.2020
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 11/2021
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-020-04955-x

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