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Microsystem Technologies
Erschienen in: Microsystem Technologies 7/2015

01.07.2015 | Technical Paper

A novel fabrication process for MEMS spiral inductors realized on oxide islands

verfasst von: Teweldebrhan Kifle, Sudhir Chandra, S. K. Koul

Erschienen in: Microsystem Technologies | Ausgabe 7/2015

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Abstract

In the present work, we report a novel fabrication process for spiral inductor structures. The inductors were fabricated on insulator-filled and planarized five micron-deep islands made on silicon substrate which involved bulk micromachining. For comparison purposes, similar types of inductors were made on plain oxidized silicon wafers. Simulation has been carried out using CST microwave studio in which geometric parameters such as line width, spacing between traces, number of turns, the depth of the island and the separation between the underpass and the top spirals, the separation of the ground plane from outer inductor arm were studied. The parameters were extracted from the measurements carried out on the fabricated inductors using the conventional \(\pi\)-model in Agilent ADS and a good fit has been obtained. The characterization results showed that the quality factors of the structures fabricated on the insulator-filled islands outperform the devices fabricated on just silicon wafer surface.
Vorheriger Artikel Low-cost silicon wafer dicing using a craft cutter
Nächster Artikel Analysis and review on usage of broadband techniques in design of printed antennas for UWB communications

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Metadaten
Titel
A novel fabrication process for MEMS spiral inductors realized on oxide islands
verfasst von
Teweldebrhan Kifle
Sudhir Chandra
S. K. Koul
Publikationsdatum
01.07.2015
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 7/2015
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-014-2201-0

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