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Microsystem Technologies
Erschienen in: Microsystem Technologies 7/2015

01.07.2015 | Technical Paper

Characterization of low temperature synthesized hexagonal diamond thin films

Erschienen in: Microsystem Technologies | Ausgabe 7/2015

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Abstract

Characterization of hexagonal diamond thin films synthesized by photo-enhanced chemical vapor deposition method at 450 °C on Al/Ni coated thermally oxidized Si wafer substrates is reported here. Measurements of optical, electrical and mechanical properties of synthesized hexagonal diamond films are reported for the first time. Optical band gap of the hexagonal diamond film is approximately 1.0 eV as obtained from the Tauc plot utilizing UV–Visible spectroscopy. Nanoindenter is utilized for I–V and reduced modulus measurements on the hexagonal diamond films.
Vorheriger Artikel Non-destructive wafer-level bond defect identification by scanning acoustic microscopy
Nächster Artikel Vibration sensitivity analytical analysis for rocking mass microgyroscope

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Metadaten
Titel
Characterization of low temperature synthesized hexagonal diamond thin films
Publikationsdatum
01.07.2015
Erschienen in
Microsystem Technologies / Ausgabe 7/2015
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-014-2196-6

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