Skip to main content
Fachgebiete
Automobil + Motoren Bauwesen + Immobilien Business IT + Informatik Elektrotechnik + Elektronik Energie + Nachhaltigkeit Finance + Banking Management + Führung Marketing + Vertrieb Maschinenbau + Werkstoffe Versicherung + Risiko
DE
EN
Themenseiten
Organisationspsychologie Projektmanagement Marketing Smart Manufacturing
Bücher
Zeitschriften
Weitere Formate
Podcasts Webinare Technik Webinare Wirtschaft Kongresse Veranstaltungskalender Awards
Jetzt Einzelzugang starten
Zugang für Unternehmen
Referenzkunden
MTZ-Fachkongress

Antriebe und Energiesysteme von morgen


Austausch von Automobil- und Energiewirtschaft

Am 14./15. Mai geht es in Chemnitz um die Mobilitätswende durch Elektro- und Wasserstofffahrzeuge.
Erweiterte Suche
Anmelden
nach oben
Erschienen in:
Thermoelectric Effects: Semiclassical and Quantum Approaches from the Boltzmann Transport Equation Kapitel lesen Erstes Kapitel lesen

2014 | OriginalPaper | Buchkapitel

2. Electron Transport Engineering by Nanostructures for Efficient Thermoelectrics

verfasst von : Je-Hyeong Bahk, Ali Shakouri

Erschienen in: Nanoscale Thermoelectrics

Verlag: Springer International Publishing

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

We theoretically investigate nanoscale structures such as nanoparticles embedded in bulk materials as a means of improving the thermoelectric energy conversion efficiency. We focus on the impact of such nanostructures on the electron transport in the host material, and discuss the enhancement of the thermoelectric power factor and thus the figure of merit. Nanostructures embedded in thermoelectric materials can create potential variations at the nanoscale due to the hetero-interfaces, which can alter the transport of charge carriers in the host material to enhance the Seebeck coefficient and the power factor. The energy-dependent electron scattering times induced by nanoparticles are calculated using the partial wave method. Thermoelectric transport properties are then calculated based on the linearized Boltzmann transport theory with the relaxation time approximation for various thermoelectric materials such as ErAs:InGaAs, PbTe, and Mg2Si. The effects of different kinds of nanoparticles including single-phase ionized metallic nanoparticles and core–shell nanoparticles embedded in semiconductors are investigated in these semiconductors. Finally the electron energy filtering scheme is discussed to further enhance the thermoelectric energy conversion efficiency.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Jetzt informieren
Vorheriges Kapitel Thermoelectric Effects: Semiclassical and Quantum Approaches from the Boltzmann Transport Equation
Nächstes Kapitel Thermal Conductivity of Particulate Nanocomposites
Literatur
1.
Bell, LE: Cooling, heating, generating power, and recovering waste heat with thermoelectric systems. Science 321, 1457–1461 (2008)CrossRef
2.
Chen, G, Shakouri, A: Heat transfer in nanostructures for solid-state energy conversion. J. Heat Transf. 124(2), 242–252 (2002)CrossRef
3.
4.
Snyder, GJ, Toberer, ES: Complex thermoelectric materials. Nat. Mater. 7, 105–114 (2008)CrossRef
5.
Vineis, CJ, Shakouri, A, Majumdar, A, Kanatzidis, MG: Nanostructured thermoelectrics: big efficiency gains from small features. Adv. Mater. 22, 3970–3980 (2010)CrossRef
6.
Shakouri, A: Recent developments in semiconductor thermoelectric physics and materials. Annu. Rev. Mater. Res. 41, 399–431 (2011)CrossRef
7.
Pei, Y, Shi, X, LaLonde, A, Wang, H, Chen, L, Snyder, GJ: Convergence of electronic bands for high performance bulk thermoelectrics. Nature 473, 66–69 (May 2011)CrossRef
8.
Liu, W, Tan, X, Yin, K, Liu, H, Tang, X, Shi, J, Zhang, Q, Uher, C: Convergence of conduction bands as a means of enhancing thermoelectric performance of n-type Mg2Si1-xSnx solid solutions. Phys. Rev. Lett. 108, 166601 (April 2012)CrossRef
9.
Heremans, JP, Jovovic, V, Toberer, ES, Saramat, A, Kurosaki, K, Charoenphakdee, K, Yamanaka, S, Snyder, JF: Enhancement of thermoelectric efficiency in PbTe by distortion of the electronic density of states. Science 321, 554–557 (2008)CrossRef
10.
Zebarjadi, M, Joshi, G, Zhu, G, Yu, B, Minnich, A, Lan, Y, Wang, X, Dresselhaus, M, Ren, Z, Chen, G: Power factor enhancement by modulation doping in bulk nanocomposites. Nano Lett. 11, 2225–2230 (2011)CrossRef
11.
Bahk, J-H, Bian, Z, Zebarjadi, M, Santhanam, P, Ram, R, Shakouri, A: Thermoelectric power factor enhancement by ionized nanoparticle scattering. Appl. Phys. Lett. 99, 072118 (2011)CrossRef
12.
Bahk, J-H, Santhanam, P, Bian, Z, Ram, R, Shakouri, A: Resonant carrier scattering by core-shell nanoparticles for thermoelectric power factor enhancement. Appl. Phys. Lett. 100, 012102 (2012)CrossRef
13.
Zide, JMO, Bahk, J-H, Singh, R, Zebarjadi, M, Zeng, G, Lu, H, Feser, JP, Xu, D, Singer, SL, Bian, ZX, Majumdar, A, Bowers, JE, Shakouri, A, Gossard, AC: High efficiency semimetal/semiconductor nanocomposite thermoelectric materials. J. Appl. Phys. 108, 123702 (2010)CrossRef
14.
Bahk, J-H, Bian, Z, Shakouri, A: Electron energy filtering by a nonplanar potential to enhance the thermoelectric power factor in bulk materials. Phys. Rev. B 87, 075204 (2013)CrossRef
15.
N. W. Ashcroft and N. D. Mermin, Solid State Physics, Chap. 12–13 (Thomson Learning Inc., 1976).
16.
Shakouri, A, Zebarjadi, M: Nanoengineered materials for thermoelectric energy conversion. In: Volz, S (ed.) Thermal Nanosystems and Nanomaterials. Springer, Berlin (2009)
17.
H. B. Callen, Thermodynamics and an introduction to thermostatistics, 2nd Ed. (John Wiley & Sons, 1985).
18.
Kim, R, Datta, S, Lundstrom, MS: Influence of dimensionality on thermoelectric device performance. J. Appl. Phys. 105, 034506 (2009)CrossRef
19.
M. Lundstrom, Fundamentals of Carrier Transport, 2nd Ed. (Cambridge Univ. Press, 2000).
20.
Vineis, CJ, Harman, TC, Calawa, SD, Walsh, MP, Reeder, RE, Singh, R, Shakouri, A: Carrier concentration and temperature dependence of the electronic transport properties of epitaxial PbTe and PbTe/PbSe nanodot superlattices. Phys. Rev. B 77, 235202 (2008)CrossRef
21.
Nolas, GS, Goldsmid, HJ: “Thermal conductivity of semiconductors”, Chap.1.4. In: Tritt, TM (ed.) Thermal Conductivity: Theory, Properties, and Applications. Kluwer, New York (2004)
22.
Schiff, LI: Quantum Mechanics. McGraw-Hill, New York (1949)
23.
Griffiths, DJ: Introduction to Quantum Mechanics. Prentice Hall, London (1995)MATH
24.
Zebarjadi, M, Esfarjani, K, Shakouri, A, Bahk, J-H, Bian, Z, Zeng, G, Bowers, J, Lu, H, Zide, J, Gossard, A: Effect of nanoparticle scattering on thermoelectric power factor. Appl. Phys. Lett. 94, 202105 (2009)CrossRef
25.
Bahk, J-H, Bian, Z, Zebarjadi, M, Zide, JMO, Lu, H, Xu, D, Feser, JP, Zeng, G, Majumdar, A, Gossard, AC, Shakouri, A, Bowers, JE: Thermoelectric figure of merit of (In0.53Ga0.47As)0.8(In0.52Al0.48As)0.2 III-V semiconductor alloys. Phys. Rev. B 81, 235209 (2010)CrossRef
26.
Palmstrøm, CJ, Tabatabaie, N, Allen, SJ: Epitaxial growth of ErAs on (100) GaAs. Appl. Phys. Lett. 53, 2608 (1988)CrossRef
27.
Driscoll, DC, Hanson, MP, Mueller, E, Gossard, AC: Growth and microstructure of semimetallic ErAs particles embedded in an In0.53Ga0.47As matrix. J. Cryst. Growth 251, 243 (2003)CrossRef
28.
Klenov, DO, Driscoll, DC, Gossard, AC, Stemmer, S: Scanning transmission electron microscopy of ErAs nanoparticles embedded in epitaxial In0.53Ga0.47As layers. Appl. Phys. Lett. 86, 111912 (2005)CrossRef
29.
Zide, JM, Klenov, DO, Stemmer, S, Gossard, AC, Zeng, G, Bowers, JE, Vashaee, D, Shakouri, A: Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles. Appl. Phys. Lett. 87, 112102 (2005)CrossRef
30.
Driscoll, DC, Hanson, M, Kadow, C, Gossard, AC: Transition to insulating behavior in the metal–semiconductor digital composite ErAs:InGaAs. J. Vac. Sci. Technol. B 19, 1631 (2001)CrossRef
31.
Burke, PG, Lu, H, Rudawski, NG, Gossard, AC, Bahk, J-H, Bowers, JE: Electrical properties of Er-doped In0.53Ga0.47As. J. Vac. Sci. Technol. B 29(3), 03C117 (2011)CrossRef
32.
Dorn, A, Peter, M, Kicin, S, Ihn, T, Ensslin, K, Driscoll, D, Gossard, AC: Charge tunable ErAs islands for backgate isolation in AlGaAs heterostructures. Appl. Phys. Lett. 82, 2631 (2003)CrossRef
33.
Kadow, C, Fleischer, SB, Ibbetson, JP, Bowers, JE, Gossard, AC: Self-assembled ErAs islands in GaAs: growth and subpicosecond carrier dynamics. Appl. Phys. Lett. 75, 3548 (1999)CrossRef
34.
Pohl, P, Renner, FH, Eckardt, M, Schwanhausser, A, Friedrich, A, Yuksekdag, O, Malzer, S, Dohler, GH, Kiesel, P, Driscoll, D, Hanson, M, Gossard, AC: Enhanced recombination tunneling in GaAs pn junctions containing low-temperature-grown-GaAs and ErAs layers. Appl. Phys. Lett. 83, 4035 (2003)CrossRef
35.
Cahill, DG, Goodson, K, Majumdar, A: Thermometry and thermal transport in micro/nanoscale solid-state devices and structures. J. Heat Transf. 124, 223 (2002)CrossRef
36.
Bahk, J-H: “Electron transport in ErAs:InGa(Al)As metal/semiconductor nanocomposites for thermoelectric power generation,” Ph.D. thesis, UC Santa Barbara, 2010.
37.
Ravich, YI: “Selective carrier scattering in thermoelectric materials”, Chap. 7. In: Rowe, DM (ed.) CRC Handbook of Thermoelectrics, pp. 67–81. CRC Press, Boca Raton, FL (1995)
38.
Bilc, DI, Mahanti, SD, Kanatzidis, MG: Electronic transport properties of PbTe and AgPbmSbTe2+m systems. Phys. Rev. B 74, 125202 (2006)CrossRef
39.
Ravich, YI, Efimova, BA, Tamarchenko, VI: Scattering of current carriers and transport phenomena in lead chalcogenides. Phys. Stat. Sol. B. 43, 11–33 (1971)CrossRef
40.
41.
Shakouri, A, Bowers, JE: Heterostructure integrated thermionic coolers. Appl. Phys. Lett. 71, 1234 (1997)CrossRef
42.
Shakouri, A., Labounty, C., Abraham, P., Piprek, J., Bowers, J.E.: Mater. Res. Soc. Proc., 545, 449– 45 (Mater. Res. Soc., Pittsburgh, 1999).
43.
Vashaee, D, Shakouri, A: Improved thermoelectric power factor in metal-based superlattices. Phys. Rev. Lett. 92, 106103 (2004)CrossRef
44.
Kim, R, Jeong, C, Lundstrom, MS: On momentum conservation and thermionic emission cooling. J. Appl. Phys. 107, 054502 (2010)CrossRef
45.
Nolas, GS, Sharp, J, Goldsmid, HJ: Thermoelectrics: basic principles and new materials developments. Springer, New York (2001)CrossRef
46.
Smith, RA: Semiconductors, 2nd edn. Cambridge University Press, London (1979)
47.
Biswas, K, He, J, Blum, ID, Wu, C, Hogan, TP, Seidman, DN, Dravid, VP, Kanatzidis, MG: High-performance bulk thermoelectrics with all-scale hierarchical architectures. Nature 489, 414–418 (Sep. 2012)CrossRef
48.
Zaitsev, VK, Fedorov, MI, Gurieva, EA, Eremin, IS, Konstantinov, PP, Samunin, AY, Vedernikov, MV: Highly effective Mg2Si1-xSnx thermoelectrics. Phys. Rev. B 74, 045207 (2006)CrossRef
49.
Zhang, Q, He, J, Zhu, TJ, Zhang, SN, Zhao, XB, Tritt, TM: High figures of merit and natural nanostructures in Mg2Si0.4Sn0.6 based thermoelectric materials. Appl. Phys. Lett. 93, 102109 (2008)CrossRef
50.
Tani, J, Kido, H: Thermoelectric properties of Bi-doped Mg2Si semiconductors. Physica B 364, 218–224 (2005)CrossRef
51.
Akasaka, M, Iida, T, Matsumoto, A, Yamanaka, K, Takanashi, Y, Imai, T, Hamada, N: The thermoelectric properties of bulk crystalline n- and p-type Mg2Si prepared by the vertical Bridgman method. J. Appl. Phys. 104, 013703 (2008)CrossRef
52.
Bergman, DJ, Levy, O: Thermoelectric properties of a composite medium. J. Appl. Phys. 70(11), 6821–6833 (1991)CrossRef
53.
Friedel, J: On some electrical and magnetic properties of metallic solid solutions. Can. J. Phys. 34, 1190–1211 (1956)CrossRef
54.
Ahmad, S, Hoang, K, Mahanti, SD: Ab initio study of deep defect states in narrow band-gap semiconductors: Group III impurities in PbTe. Phys. Rev. Lett. 96, 056403 (2006)CrossRef
55.
Zhitinskaya, MK, Nemov, SA, Svechnikova, TE: Phys. Solid State 40, 1297 (1998)CrossRef
56.
Heremans, JP, Wiendlocha, B, Chamoire, AM: Resonant levels in bulk thermoelectric semiconductors. Energy Environ. Sci. 5, 5510–5530 (2012)CrossRef
Metadaten
Titel
Electron Transport Engineering by Nanostructures for Efficient Thermoelectrics
verfasst von
Je-Hyeong Bahk
Ali Shakouri
Copyright-Jahr
2014
Buch
Nanoscale Thermoelectrics

Print ISBN: 978-3-319-02011-2

Electronic ISBN: 978-3-319-02012-9

Copyright-Jahr: 2014

DOI
https://doi.org/10.1007/978-3-319-02012-9_2