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Erschienen in: Journal of Materials Science: Materials in Electronics 14/2019

27.06.2019

Effect of Dy2O3 content on the dielectric, ferroelectric, and energy storage properties of lead-free 0.5Na0.5Bi0.5TiO3–0.5SrTiO3 bulk ceramics

verfasst von: Peng Chen, Leiyang Zhang, Jing Cai, Ziyang Wang, Wengjing Shi, Jiayi Jing, Fangbin Wei, Gang Liu, Yan Yan, Hongbo Liu, Li Jin

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 14/2019

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Abstract

In the past decades, lead-free ceramics with high polarization, low remnant polarization and high electric breakdown strength have drawn a lot of attention because of their potential applications in dielectric capacitors with excellent energy storage performance. In the current investigation, we develop a novel lead-free Dy doped 0.5Na0.5Bi0.5TiO3–0.5SrTiO3 ceramics, which were fabricated by the conventional electroceramic processing route. By doping Dy2O3 into 0.5Na0.5Bi0.5TiO3–0.5SrTiO3 with various contents from 0.1 at.% to 0.5 at.%, pure perovskite phases and relatively dense structures were obtained. The increase of Dy2O3 concentration not only shifts the Tm toward to lower temperature, but also reduces the permittivity and gain sizes, thus enhancing the temperature stability of dielectric properties. The enhanced dielectric energy storage properties were systematically investigated by testing the polarization–electric field hysteresis loops as a function of the applied electric field, temperature, and loading cycles. The dielectric energy storage density of in 0.1 at.% doped 0.5Na0.5Bi0.5TiO3–0.5SrTiO3 is 1.59 J/cm3, which is nearly twice higher than that of undoped NBT–ST. Hence, the Dy modified 0.5Na0.5Bi0.5TiO3–0.5SrTiO3 ceramics have exhibited potential application as dielectric capacitors with relatively good energy storage performance.

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Metadaten
Titel
Effect of Dy2O3 content on the dielectric, ferroelectric, and energy storage properties of lead-free 0.5Na0.5Bi0.5TiO3–0.5SrTiO3 bulk ceramics
verfasst von
Peng Chen
Leiyang Zhang
Jing Cai
Ziyang Wang
Wengjing Shi
Jiayi Jing
Fangbin Wei
Gang Liu
Yan Yan
Hongbo Liu
Li Jin
Publikationsdatum
27.06.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 14/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01723-0

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