Anzeige
Erschienen in:
02.02.2018
GaN-based double-gate (DG) sub-10-nm MOSFETs: effects of gate work function
Erschienen in: Journal of Computational Electronics | Ausgabe 2/2018
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
Double-gate (DG) metal–oxide–semiconductor field-effect transistors (MOSFETs) with GaN channel material are very promising for use in future high-performance low-power nanoscale device applications. In this work, GaN-based sub-10-nm DG-MOSFETs with different gate work function, \(\varPhi \), were designed and their performance evaluated. Short-channel effects (SCEs) were significantly reduced by introduction of gates made of dual metals. Use of gold at the source side, having higher \(\varPhi \) (\(\varPhi _{\mathrm{Au}}=5.11\,\hbox {eV}\)) compared with aluminum (\(\varPhi _{\mathrm{Al}}=4.53\,\hbox {eV}\)), at the drain side enhanced the gate control over the channel and screened the effect of the drain on the channel. Dual-metal (DM) DG-MOSFETs showed better results in the nanoscale regime and were more robust to SCEs. Therefore, GaN-based sub-10-nm DM DG-MOSFETs are suitable candidates for use in future complementary metal–oxide–semiconductor (CMOS) technology.