Skip to main content
Erschienen in: Journal of Nanoparticle Research 3/2013

01.03.2013 | Research Paper

Mild-temperature synthesis and first-principle fluorescence simulation of GaN nanoparticles

verfasst von: Nai-Feng Zhuang, Xing Wang, Fei Fei, Chun-Chen Liu, Lin Wei, Yong-Fan Zhang, Xiao-Lin Hu, Jian-Zhong Chen

Erschienen in: Journal of Nanoparticle Research | Ausgabe 3/2013

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

In this paper, GaN nanoparticles were synthesized from the complex Ga(H2NCONH2)6Cl3 in the flow of NH3 at a mild temperature (350 °C). Further purification was performed by the ethanol-thermal method. The ethanol-thermal method also prompted the GaN nanoparticles to grow into an anisotropic morphology. XRD patterns reveal that GaN nanoparticles have crystallized in a hexagonal wurtzite structure. TEM observation shows that the average size of the as-prepared nanoparticles is about 5–10 nm. The photoluminescence spectrum exhibits a broad green emission band with a peak at 510 nm. It can be known from the first-principle theoretic simulation by the TDDFT method that this fluorescence emission band is attributed to the hydride defects of V N-H on the surface of GaN nanoparticles.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literatur
Zurück zum Zitat Chitara B, Bhat SV, Vivekchand SRC, Gomathi A, Rao CNR (2008) White-light sources based on composites of GaN nanocrystals with conducting polymers and nanophosphors. Solid State Commun 147:409–413CrossRef Chitara B, Bhat SV, Vivekchand SRC, Gomathi A, Rao CNR (2008) White-light sources based on composites of GaN nanocrystals with conducting polymers and nanophosphors. Solid State Commun 147:409–413CrossRef
Zurück zum Zitat Chen Z, Cao C, Li WS, Surya C (2009) Well-aligned single-crystalline GaN nanocolumns and their field emission properties. Cryst Growth Des 9:792–796CrossRef Chen Z, Cao C, Li WS, Surya C (2009) Well-aligned single-crystalline GaN nanocolumns and their field emission properties. Cryst Growth Des 9:792–796CrossRef
Zurück zum Zitat Cho S, Lee J, Park IY, Kim S (2002) New simple synthesis route of GaN powders from gallium oxyhydroxide. Mater Sci Eng B 95:275–278CrossRef Cho S, Lee J, Park IY, Kim S (2002) New simple synthesis route of GaN powders from gallium oxyhydroxide. Mater Sci Eng B 95:275–278CrossRef
Zurück zum Zitat Denis A, Goglio G, Demazeau G (2006) Gallium nitride bulk crystal growth processes: a review. Mater Sci Eng R 50:167–194CrossRef Denis A, Goglio G, Demazeau G (2006) Gallium nitride bulk crystal growth processes: a review. Mater Sci Eng R 50:167–194CrossRef
Zurück zum Zitat Désilets S, Brousseau P, Chamberland D, Singh S, Feng H, Turcotteb R, Armstrong K, Anderson J (2011) Analyses of the thermal decomposition of urea nitrate at high temperature. Thermochim Acta 521:59–65CrossRef Désilets S, Brousseau P, Chamberland D, Singh S, Feng H, Turcotteb R, Armstrong K, Anderson J (2011) Analyses of the thermal decomposition of urea nitrate at high temperature. Thermochim Acta 521:59–65CrossRef
Zurück zum Zitat Ganesh V, Suresh S, Balaji M, Baskar K (2010) Synthesis and characterization of nanocrystalline gallium nitride by nitridation of Ga-EDTA complex. J Alloy Compd 498:52–56CrossRef Ganesh V, Suresh S, Balaji M, Baskar K (2010) Synthesis and characterization of nanocrystalline gallium nitride by nitridation of Ga-EDTA complex. J Alloy Compd 498:52–56CrossRef
Zurück zum Zitat Hu XL, Li JQ, Zhang YF, Li HH, Li Y (2009) Theoretical analysis on yellow emission of gallium nitride with vacancy defects or impurities. Theor Chem Acc 123:521–525CrossRef Hu XL, Li JQ, Zhang YF, Li HH, Li Y (2009) Theoretical analysis on yellow emission of gallium nitride with vacancy defects or impurities. Theor Chem Acc 123:521–525CrossRef
Zurück zum Zitat Jacquemin D, Perpète EA, Scuseria GE, Ciofini I, Adamo C (2008) TD-DFT performance for the visible absorption spectra of organic dyes: conventional versus long-range hybrids. J Chem Theory Comput 4:123–135CrossRef Jacquemin D, Perpète EA, Scuseria GE, Ciofini I, Adamo C (2008) TD-DFT performance for the visible absorption spectra of organic dyes: conventional versus long-range hybrids. J Chem Theory Comput 4:123–135CrossRef
Zurück zum Zitat Kisailus D, Choi JH, Lange FF (2003) GaN nanocrystals from oxygen and nitrogen-based precursors. J Cryst Growth 249:106–120CrossRef Kisailus D, Choi JH, Lange FF (2003) GaN nanocrystals from oxygen and nitrogen-based precursors. J Cryst Growth 249:106–120CrossRef
Zurück zum Zitat Nyk M, Jabłoński JM, Strek W, Misiewicz J (2004) Yellow emission of GaN nanoparticles embedded in a silica xerogel matrix. Opt Mater 26:133–136CrossRef Nyk M, Jabłoński JM, Strek W, Misiewicz J (2004) Yellow emission of GaN nanoparticles embedded in a silica xerogel matrix. Opt Mater 26:133–136CrossRef
Zurück zum Zitat Oxley JC, Smith JL, Naik S, Moran J (2009) Decompositions of urea and guanidine nitrates. J Energ Mater 27:17–39CrossRef Oxley JC, Smith JL, Naik S, Moran J (2009) Decompositions of urea and guanidine nitrates. J Energ Mater 27:17–39CrossRef
Zurück zum Zitat Reshchikov MA, Morkoc H (2005) Luminescence properties of defects in GaN. J Appl Phys 97:061301CrossRef Reshchikov MA, Morkoc H (2005) Luminescence properties of defects in GaN. J Appl Phys 97:061301CrossRef
Zurück zum Zitat Schaber PM, Colson J, Higgins S, Thielen D, Anspach B, Brauer J (2004) Thermal decomposition (pyrolysis) of urea in an open reaction vessel. Thermochim Acta 424:131–142CrossRef Schaber PM, Colson J, Higgins S, Thielen D, Anspach B, Brauer J (2004) Thermal decomposition (pyrolysis) of urea in an open reaction vessel. Thermochim Acta 424:131–142CrossRef
Zurück zum Zitat Scholz F (2012) Semipolar GaN grown on foreign substrates: a review. Semicond Sci Technol 27:024002CrossRef Scholz F (2012) Semipolar GaN grown on foreign substrates: a review. Semicond Sci Technol 27:024002CrossRef
Zurück zum Zitat Van de Walle CG (1997) Interactions of hydrogen with native defects in GaN. Phys Rev B 56:R10020–R10023CrossRef Van de Walle CG (1997) Interactions of hydrogen with native defects in GaN. Phys Rev B 56:R10020–R10023CrossRef
Zurück zum Zitat Van de Walle CG, Neugebauer J (2004) First-principles calculations for defects and impurities: applications to III-nitrides. J Appl Phys 95:3851–3879CrossRef Van de Walle CG, Neugebauer J (2004) First-principles calculations for defects and impurities: applications to III-nitrides. J Appl Phys 95:3851–3879CrossRef
Zurück zum Zitat Yan H, Liu K, Luo R, Chen S, Cao H (2010) Synthesis of GaN nanoparticles from NH4[Ga(OH)2CO3] under a flow of ammonia gas. Mater Lett 64:2109–2111CrossRef Yan H, Liu K, Luo R, Chen S, Cao H (2010) Synthesis of GaN nanoparticles from NH4[Ga(OH)2CO3] under a flow of ammonia gas. Mater Lett 64:2109–2111CrossRef
Zurück zum Zitat You W, Zhang XD, Zhang LM, Yang Z, Bian H, Ge Q, Guo WX, Wang WX, Liu ZM (2008) Effects of different ions implantation on yellow luminescence from GaN. Phys B 403:2666–2670CrossRef You W, Zhang XD, Zhang LM, Yang Z, Bian H, Ge Q, Guo WX, Wang WX, Liu ZM (2008) Effects of different ions implantation on yellow luminescence from GaN. Phys B 403:2666–2670CrossRef
Metadaten
Titel
Mild-temperature synthesis and first-principle fluorescence simulation of GaN nanoparticles
verfasst von
Nai-Feng Zhuang
Xing Wang
Fei Fei
Chun-Chen Liu
Lin Wei
Yong-Fan Zhang
Xiao-Lin Hu
Jian-Zhong Chen
Publikationsdatum
01.03.2013
Verlag
Springer Netherlands
Erschienen in
Journal of Nanoparticle Research / Ausgabe 3/2013
Print ISSN: 1388-0764
Elektronische ISSN: 1572-896X
DOI
https://doi.org/10.1007/s11051-013-1458-z

Weitere Artikel der Ausgabe 3/2013

Journal of Nanoparticle Research 3/2013 Zur Ausgabe

    Marktübersichten

    Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen.