Ausgabe 4/2004
Inhalt (20 Artikel)
A theory of the effect of impurities on the yield stress of silicon crystals
B. V. Petukhov
Electric transport in gallium antimonide single crystals involving molten GaSb-Sn inclusions
A. M. Orlov, A. A. Skvortsov, A. A. Salanov
Microwave photoconductivity and photodielectric effect in thin PbS films obtained from thiocarbamide coordination compounds
N. L. Sermakasheva, G. F. Novikov, Yu. M. Shul'ga, V. N. Semenov
Capacitance study of electron traps in low-temperature-grown GaAs
P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
Oscillations of induced photopleochroism in ZnO/GaAs heterojunctions
S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, N. Fernelius, J. Goldstein
Electron-phonon damping factor for the landau quantization of 2D electrons with a fine structure of the energy spectrum
V. I. Kadushkin
Oxide-p-InSe heterostructures with improved photoelectric characteristics
V. N. Katerinchuk, Z. D. Kovalyuk
Photosensitivity of the structures based on quinary solid solutions of the isoelectronic series of germanium
A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', E. I. Terukov
Energy states in short-period symmetrical and asymmetrical (GaAs)N/(AlAs)M superlattices: The effect of the boundary conditions
K. E. Glukhov, A. I. Bercha, D. V. Korbutyak, V. G. Litovchenko
Resonant Γ-X tunneling in single-barrier GaAs/AlAs/GaAs heterostructures
Yu. N. Khanin, E. E. Vdovin, Yu. V. Dubrovskii
Tuning the energy spectrum of InAs/GaAs quantum dots by varying the thickness and composition of the thin double GaAs/InGaAs cladding layer
I. A. Karpovich, B. N. Zvonkov, S. B. Levichev, N. V. Baidus, S. V. Tikhov, D. O. Filatov, A. P. Gorshkov, S. Yu. Ermakov
Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers: Photoluminescence of tunneling-coupled quantum wells
Yu. V. Khabarov, V. V. Kapaev, V. A. Petrov
A model of photoinduced annealing of intrinsic defects in hexagonal CdSxSe1−x quantum dots
V. P. Kunets, N. R. Kulish, M. P. Lisitsa, V. P. Bryksa
Carrier density profile in weakly coupled GaAs/AlGaAs superlattices
P. N. Brunkov, S. O. Usov, Yu. G. Musikhin, A. E. Zhukov, G. E. Cirlin, V. M. Ustinov, S. G. Konnikov, G. K. Rasulova
Electrical properties of fine-grained polycrystalline CdTe
S. A. Kolosov, Yu. V. Klevkov, A. F. Plotnikov
Exciton photoluminescence in doped quasi-1D structures based on silicon
A. V. Sachenko, D. V. Korbutyak, Yu. V. Kryuchenko, O. M. Sreseli
A small-molecule organic semiconductor
F. Yakuphanoglu, M. Aydin, N. Arsu, M. Sekerci
Characteristics of nuclear radiation detectors based on semi-insulating gallium arsenide
E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, N. B. Strokan, V. I. Vasil'ev, V. N. Gavrin, E. P. Veretenkin, Yu. P. Kozlova, V. B. Kulikov, A. V. Markov, A. Ya. Polyakov
Investigation of characteristics of InSb-based photodiode linear arrays
P. V. Biryulin, V. I. Turinov, E. B. Yakimov
Thermal calculation of SiC p-i-n diodes
P. B. Gamuletskaya, A. V. Kirillov, A. A. Lebedev, L. P. Romanov, V. A. Smirnov