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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 4/2018

09.08.2018

Strain effects on the DC performance of single-layer TMD-based double-gate field-effect transistors

verfasst von: Manouchehr Hosseini, Hamidreza Karami

Erschienen in: Journal of Computational Electronics | Ausgabe 4/2018

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Abstract

The effects of biaxial strain on the direct-current (DC) performance of transition-metal dichalcogenide (TMD)-based double-gate field-effect transistors (DGFETs) were investigated. The TMDs used as the transistor channel were MoS\(_2\), MoSe\(_2\), WS\(_2\), and WSe\(_2\). The results indicated that tensile strain increased the DC performance of the DGFET, and that this performance enhancement was greater for the DGFET based on WSe\(_2\) compared with the other TMDs. Small compressive strain decreased the performance of the transistor, but with larger compressive strain, this performance degradation was partly recovered.
Vorheriger Artikel EMA-based modeling of the surface potential and drain current of dual-material gate-all-around TFETs
Nächster Artikel 3D numerical simulations of single-event transient effects in SOI FinFETs

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Metadaten
Titel
Strain effects on the DC performance of single-layer TMD-based double-gate field-effect transistors
verfasst von
Manouchehr Hosseini
Hamidreza Karami
Publikationsdatum
09.08.2018
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 4/2018
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-018-1227-4

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