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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 4/2017

10.10.2017 | S.I.: Computational Electronics of Emerging Memory Elements

\({ SIM}^2{ RRAM}\): a physical model for RRAM devices simulation

verfasst von: Marco A. Villena, Juan B. Roldán, Francisco Jiménez-Molinos, Enrique Miranda, Jordi Suñé, Mario Lanza

Erschienen in: Journal of Computational Electronics | Ausgabe 4/2017

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Abstract

In the last few years, resistive random access memory (RRAM) has been proposed as one of the most promising candidates to overcome the current Flash technology in the market of non-volatile memories. These devices have the ability to change their resistance state in a reversible and controlled way applying an external voltage. In this way, the resulting high- and low-resistance states allow the electrical representation of the binary states “0” and “1” without storing charge. Many physical models have been developed with the aim of understanding the mechanisms that control the resistive switching. In this work, we have compiled the main theories accepted as well as their corresponding models for the conduction characteristics. In addition, simulation tools play a very important role in the task of checking these theories and understanding these mechanisms. For this reason, the simulation tool called \(\hbox {SIM}^{2}\hbox {RRAM}\) has been presented. This simulator is capable of replicating the global behavior of RRAM cell based on \(\hbox {HfO}_{x}\).
Vorheriger Artikel Toward reliable RRAM performance: macro- and micro-analysis of operation processes
Nächster Artikel Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications

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Metadaten
Titel
: a physical model for RRAM devices simulation
verfasst von
Marco A. Villena
Juan B. Roldán
Francisco Jiménez-Molinos
Enrique Miranda
Jordi Suñé
Mario Lanza
Publikationsdatum
10.10.2017
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 4/2017
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-017-1074-8

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