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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 8/2019

11.03.2019

Giant anomalous dielectric behaviour of BaSnO3 at high temperature

verfasst von: Ku Noor Dhaniah Ku Muhsen, Rozana Aina Maulat Osman, Mohd Sobri Idris

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 8/2019

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Abstract

BaSnO3 ceramic was synthesized by conventional solid state route at high sintering temperature 1450 °C which leading to oxygen loss in air. X-ray diffraction (XRD) analysis has confirmed the phase purity of BaSnO3 with cubic structure and space group Pm-3m. The unexpected giant anomalous dielectric properties of pure BaSnO3 ceramic was revealed by impedance spectroscopy analysis when the dielectric constant (εr) value rapidly increased by temperature and gives the highest εr peak at 220 °C with 87,290 and 6027 measured at 10 Hz and 1 kHz respectively. Then, it decreases gradually by increasing the temperature above 220 °C. This anomalous giant εr was observed during heating impedance measurement and disappear upon cooling. The anomalous behaviour is expected due to oxygen deficiency.
Vorheriger Artikel Photoluminescence properties of dysprosium doped novel apatite-type Ba2Y3(SiO4)3F white-emitting phosphor
Nächster Artikel Facile preparation of Ni–Mn layered double hydroxide nanosheets/carbon for supercapacitor

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Metadaten
Titel
Giant anomalous dielectric behaviour of BaSnO3 at high temperature
verfasst von
Ku Noor Dhaniah Ku Muhsen
Rozana Aina Maulat Osman
Mohd Sobri Idris
Publikationsdatum
11.03.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 8/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01065-x

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