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Journal of Computational Electronics

Erschienen in:

01.06.2015

Multiscale approaches for the simulation of InGaN/GaN LEDs

verfasst von: Matthias Auf der Maur

Erschienen in: Journal of Computational Electronics | Ausgabe 2/2015

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Abstract

In this work we review basic aspects of multiscale approaches for combining atomistic with continuous media descriptions and quantum mechanical with semiclassical drift–diffusion transport models for LED simulations. We show how hybrid coupling of the Green’s function formalism with drift–diffusion simulations can give additional insight into device behaviour without compromising too much computational efficiency, and that the inclusion of atomistic tight-binding calculations in a multiscale framework can help in understanding specific features related to alloy fluctuations.

Vorheriger Artikel Monte Carlo simulation of hot carrier transport in III-N LEDs

Nächster Artikel Non-local transport in numerical simulation of GaN LED

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Titel: Multiscale approaches for the simulation of InGaN/GaN LEDs
verfasst von: Matthias Auf der Maur
Publikationsdatum: 01.06.2015
Verlag: Springer US
Erschienen in: Journal of Computational Electronics / Ausgabe 2/2015
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-015-0683-3

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