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Zeitschrift

Journal of Computational Electronics

Journal of Computational Electronics 2/2015

Ausgabe 2/2015

Special Issue on Simulation of GaN-based Light Emitting Diodes

Inhaltsverzeichnis ( 32 Artikel )

01.06.2015 | Ausgabe 2/2015

Introduction to the Special Issue on “Simulation of GaN-based Light-Emitting Diodes”

Joachim Piprek

01.06.2015 | Ausgabe 2/2015

Monte Carlo simulation of hot carrier transport in III-N LEDs

Pyry Kivisaari, Jani Oksanen, Jukka Tulkki, Toufik Sadi

01.06.2015 | Ausgabe 2/2015

Multiscale approaches for the simulation of InGaN/GaN LEDs

Matthias Auf der Maur

01.06.2015 | Ausgabe 2/2015

Non-local transport in numerical simulation of GaN LED

Z. M. Simon Li

01.06.2015 | Ausgabe 2/2015

Percolation transport study in nitride based LED by considering the random alloy fluctuation

Chen-Kuo Wu, Chi-Kang Li, Yuh-Renn Wu

01.06.2015 | Ausgabe 2/2015

Optical excitation dependent emission properties of InGaN quantum wells

J. Hader, J. V. Moloney, S. W. Koch

01.06.2015 | Ausgabe 2/2015

Inhomogeneous injection in III-nitride light emitters with deep multiple quantum wells

Mikhail V. Kisin, Hussein S. El-Ghoroury

01.06.2015 | Ausgabe 2/2015

Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes

Marco Mandurrino, Michele Goano, Marco Vallone, Francesco Bertazzi, Giovanni Ghione, Giovanni Verzellesi, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni

01.06.2015 | Ausgabe 2/2015

Acceptor activation model for III-nitride LEDs

Friedhard Römer, Bernd Witzigmann

01.06.2015 | Ausgabe 2/2015

Electronic properties of axial InGaN insertions in GaN nanowires

Oliver Marquardt, Lutz Geelhaar, Oliver Brandt

01.06.2015 | Ausgabe 2/2015

Performance and analysis of temperature dependent multi-walled carbon nanotubes as global interconnects at different technology nodes

Karmjit Singh, Balwinder Raj

01.06.2015 | Ausgabe 2/2015

A high performance gate engineered charge plasma based tunnel field effect transistor

Faisal Bashir, Sajad A. Loan, M. Rafat, Abdul Rehman M. Alamoud, Shuja A. Abbasi

01.06.2015 | Ausgabe 2/2015

Binary optimization of metallic nano-tube-based absorption coefficient

Majid Akhlaghi, Hosein Shahmirzaee, Mohammad Hosain Enjavi

01.06.2015 | Ausgabe 2/2015

The effect of high-k gate dielectrics on device and circuit performances of a junctionless transistor

Ratul Kumar Baruah, Roy P. Paily

01.06.2015 | Ausgabe 2/2015

An analytical 3D model for short-channel effects in undoped FinFETs

Hamdy Abd El Hamid, Benjamin Iñiguez, Valeria Kilchytska, Denis Flandre, Yehea Ismail

01.06.2015 | Ausgabe 2/2015

A new quantum-dot cellular automata fault-tolerant full-adder

Razieh Farazkish

01.06.2015 | Ausgabe 2/2015

Effects of Fin shape on sub-10 nm FinFETs

Zhihao Yu, Sheng Chang, Hao Wang, Jin He, Qijun Huang

01.06.2015 | Ausgabe 2/2015

A transport equation for confined structures applied to the OprP, Gramicidin A, and KcsA channels

Amirreza Khodadadian, Clemens Heitzinger

01.06.2015 | Ausgabe 2/2015

Hybrid methodology to model random dopant fluctuations in low doped FinFETs

Samarth Agarwal, Jeffrey B. Johnson, Mohit Bajaj, Stephen S. Furkay, Philip J. Oldiges, Robert R. Robison, K. V. R. M. Murali

01.06.2015 | Ausgabe 2/2015

Dual metal-double gate tunnel field effect transistor with mono/hetero dielectric gate material

Prateek Jain, Vishwa Prabhat, Bahniman Ghosh

01.06.2015 | Ausgabe 2/2015

Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarization fields

Shaikh Ahmed, Sasi Sundaresan, Hoon Ryu, Muhammad Usman

01.06.2015 | Ausgabe 2/2015

Effect of the front surface field (a-Si:H) on the spectral response of thin films heterojunctions solar cells

Emna Kadri, Monem Krichen, Adel Ben Arab

01.06.2015 | Ausgabe 2/2015

Super-threshold semi analytical channel potential model for DG tunnel FET

Menka Yadav, Anand Bulusu, Sudeb Dasgupta

01.06.2015 | Ausgabe 2/2015

Binary optimization of gold nano-rods for designing an optical modulator

Farzin Emami, Majid Akhlaghi, Najmeh Nozhat

01.06.2015 | Ausgabe 2/2015

Quasi-3D subthreshold current and subthreshold swing models of dual-metal quadruple-gate (DMQG) MOSFETs

Visweswara Rao Samoju, Sarvesh Dubey, Pramod Kumar Tiwari

01.06.2015 | Ausgabe 2/2015

A comprehensive study of popular eigenvalue methods employed for quantum calculation of energy eigenstates in nanostructures using GPUs

W. Rodrigues, A. Pecchia, M. Auf der Maur, A. Di Carlo

01.06.2015 | Ausgabe 2/2015

Analysis of rare events effect on single-electronics simulation based on orthodox theory

Ali A. Elabd, El-Sayed M. El-Rabaie, Abdelaziz T. Shalaby

01.06.2015 | Ausgabe 2/2015

Stability and delay analysis of multi-layered GNR and multi-walled CNT interconnects

Vobulapuram Ramesh Kumar, Manoj Kumar Majumder, Arsalan Alam, Narasimha Reddy Kukkam, Brajesh Kumar Kaushik

01.06.2015 | Ausgabe 2/2015

The quantum transport of pyrene and its silicon-doped variant: a DFT-NEGF approach

A. Rastkar, B. Ghavami, J. Jahanbin, S. Afshari, M. Yaghoobi

01.06.2015 | Ausgabe 2/2015

Effects of laser beam modulation on all-optical switching phase diagrams in magneto-optical ultrafast storage device

Iulian Petrila, Florina Ungureanu, Vasile Manta

01.06.2015 | Ausgabe 2/2015

Computational and experimental analysis of high gain antenna for WLAN/WiMAX applications

Md. Rezwanul Ahsan, Mohammad Tariqul Islam, Mohammad Habib Ullah

01.06.2015 | Ausgabe 2/2015

Design of a unit composite right/left-handed cell based bandpass filter with floating slot approach and suppression of spurious using defected microstrip structures

Pratik Mondal, Susanta Kumar Parui

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