Ausgabe 2/2015
Special Issue on Simulation of GaN-based Light Emitting Diodes
Inhalt (32 Artikel)
Monte Carlo simulation of hot carrier transport in III-N LEDs
Pyry Kivisaari, Jani Oksanen, Jukka Tulkki, Toufik Sadi
Percolation transport study in nitride based LED by considering the random alloy fluctuation
Chen-Kuo Wu, Chi-Kang Li, Yuh-Renn Wu
Optical excitation dependent emission properties of InGaN quantum wells
J. Hader, J. V. Moloney, S. W. Koch
Inhomogeneous injection in III-nitride light emitters with deep multiple quantum wells
Mikhail V. Kisin, Hussein S. El-Ghoroury
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes
Marco Mandurrino, Michele Goano, Marco Vallone, Francesco Bertazzi, Giovanni Ghione, Giovanni Verzellesi, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
Electronic properties of axial InGaN insertions in GaN nanowires
Oliver Marquardt, Lutz Geelhaar, Oliver Brandt
A high performance gate engineered charge plasma based tunnel field effect transistor
Faisal Bashir, Sajad A. Loan, M. Rafat, Abdul Rehman M. Alamoud, Shuja A. Abbasi
Binary optimization of metallic nano-tube-based absorption coefficient
Majid Akhlaghi, Hosein Shahmirzaee, Mohammad Hosain Enjavi
The effect of high-k gate dielectrics on device and circuit performances of a junctionless transistor
Ratul Kumar Baruah, Roy P. Paily
An analytical 3D model for short-channel effects in undoped FinFETs
Hamdy Abd El Hamid, Benjamin Iñiguez, Valeria Kilchytska, Denis Flandre, Yehea Ismail
A transport equation for confined structures applied to the OprP, Gramicidin A, and KcsA channels
Amirreza Khodadadian, Clemens Heitzinger
Hybrid methodology to model random dopant fluctuations in low doped FinFETs
Samarth Agarwal, Jeffrey B. Johnson, Mohit Bajaj, Stephen S. Furkay, Philip J. Oldiges, Robert R. Robison, K. V. R. M. Murali
Dual metal-double gate tunnel field effect transistor with mono/hetero dielectric gate material
Prateek Jain, Vishwa Prabhat, Bahniman Ghosh
Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarization fields
Shaikh Ahmed, Sasi Sundaresan, Hoon Ryu, Muhammad Usman
Effect of the front surface field (a-Si:H) on the spectral response of thin films heterojunctions solar cells
Emna Kadri, Monem Krichen, Adel Ben Arab
Super-threshold semi analytical channel potential model for DG tunnel FET
Menka Yadav, Anand Bulusu, Sudeb Dasgupta
Binary optimization of gold nano-rods for designing an optical modulator
Farzin Emami, Majid Akhlaghi, Najmeh Nozhat
Quasi-3D subthreshold current and subthreshold swing models of dual-metal quadruple-gate (DMQG) MOSFETs
Visweswara Rao Samoju, Sarvesh Dubey, Pramod Kumar Tiwari
A comprehensive study of popular eigenvalue methods employed for quantum calculation of energy eigenstates in nanostructures using GPUs
W. Rodrigues, A. Pecchia, M. Auf der Maur, A. Di Carlo
Analysis of rare events effect on single-electronics simulation based on orthodox theory
Ali A. Elabd, El-Sayed M. El-Rabaie, Abdelaziz T. Shalaby
Stability and delay analysis of multi-layered GNR and multi-walled CNT interconnects
Vobulapuram Ramesh Kumar, Manoj Kumar Majumder, Arsalan Alam, Narasimha Reddy Kukkam, Brajesh Kumar Kaushik
The quantum transport of pyrene and its silicon-doped variant: a DFT-NEGF approach
A. Rastkar, B. Ghavami, J. Jahanbin, S. Afshari, M. Yaghoobi
Effects of laser beam modulation on all-optical switching phase diagrams in magneto-optical ultrafast storage device
Iulian Petrila, Florina Ungureanu, Vasile Manta
Computational and experimental analysis of high gain antenna for WLAN/WiMAX applications
Md. Rezwanul Ahsan, Mohammad Tariqul Islam, Mohammad Habib Ullah