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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 2/2021

01.02.2021

Investigation of thermal annealing effects on MoO3 thin film by atomic layer deposition

verfasst von: Mustafa Demirtaş

Erschienen in: Optical and Quantum Electronics | Ausgabe 2/2021

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Abstract

Molybdenum oxide (MoO3) thin films have been obtained by plasma-enhanced atomic layer deposition using precursors of Mo(CO)6 and O2 plasma at a reactor temperature of 160 °C. The MoO3 thin films deposited on p-type silicon substrates with thermally grown 300 nm thick SiO2 layer with different numbers of ALD growth cycles. Spectroscopic ellipsometer is used to characterize as-grown film thickness and refractive index. The as-grown films are treated at annealing temperatures at 300–600 °C. The structural properties of as-grown and annealed thin films have been characterized by optical microscopy, µRaman spectra, and atomic force microscopy.
Vorheriger Artikel Numerical investigation of spiral photonic crystal fiber (S-PCF) with supporting high order OAM modes propagation for space division multiplexing applications
Nächster Artikel Introduction of the vortex Hermite-Cosh-Gaussian beam and the analysis of its intensity pattern upon propagation

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Metadaten
Titel
Investigation of thermal annealing effects on MoO3 thin film by atomic layer deposition
verfasst von
Mustafa Demirtaş
Publikationsdatum
01.02.2021
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 2/2021
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-020-02717-7

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