Ausgabe 3/2010
Inhalt (23 Artikel)
Self-diffusion parameters in carbon-subgroup crystals
M. N. Magomedov
Precipitation of boron in silicon on high-dose implantation
K. V. Feklistov, L. I. Fedina, A. G. Cherkov
Photoconductivity and luminescence in GaSe crystals at high levels of optical excitation
A. G. Kyazym-zade, V. M. Salmanov, A. A. Salmanova, A. M. Alieva, R. Z. Ibaeva
Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals
V. A. Romaka, D. Fruchart, E. K. Hlil, R. E. Gladyshevskii, D. Gignoux, V. V. Romaka, B. S. Kuzhel, R. V. Krayjvskii
Effect of annealing on the microwave magnetoresistance of thin Ge0.96Mn0.04 films
A. I. Dmitriev, R. B. Morgunov, O. L. Kazakova
Reduction in absorption in quartz/Si, quartz/Si/SiO2, and SiC/Si/SiO2 structures on laser treatment
V. N. Lissotschenko, R. V. Konakova, B. G. Konoplev, V. V. Kushnir, O. B. Okhrimenko, A. M. Svetlichnyi
Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature
Sh. N. Usmonov, Sh. A. Mirsagatov, A. Yu. Leyderman
Photosensitivity of n-CdS/p-CdTe heterojunctions obtained by chemical surface deposition of CdS
G. A. Il’chuk, V. V. Kusnezh, V. Yu. Rud’, Yu. V. Rud’, P. Yo. Shapowal, R. Yu. Petrus’
Emission sensitization and mechanisms of electron-excitation migration in structures based on III-nitrides doped with rare-earth elements (Eu, Er, Sm)
M. M. Mezdrogina, E. Yu. Danilovsky, R. V. Kuzmin
Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures
A. V. Novikov, A. N. Yablonskiy, V. V. Platonov, S. V. Obolenskiy, D. N. Lobanov, Z. F. Krasilnik
Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells
O. V. Kucherova, V. I. Zubkov, A. V. Solomonov, D. V. Davydov
The form of the profile of heterointerfaces in (311)Ga GaAs/AlAs structures
D. V. Gulyaev, K. S. Zhuravlev
Effect of thermal oxidation on charge carrier transport in nanostructured silicon
E. A. Agafonova, M. N. Martyshov, P. A. Forsh, V. Yu. Timoshenko, P. K. Kashkarov
Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties
Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, N. M. Heller, A. G. Ivanov, V. V. Shamanin
Reliability estimate for semiconductor laser module ILPN-134
O. V. Zhuravleva, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, R. V. Chernov
Effect of gold on the properties of nitrogen dioxide sensors based on thin WO3 films
O. V. Anisimov, V. I. Gaman, N. K. Maksimova, Yu. P. Najden, V. A. Novikov, E. Yu. Sevastyanov, F. V. Rudov, E. V. Chernikov
A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy
A. L. Zakgeim, G. L. Kuryshev, M. N. Mizerov, V. G. Polovinkin, I. V. Rozhansky, A. E. Chernyakov
Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons
N. A. Poklonski, N. I. Gorbachuk, S. V. Shpakovski, S. B. Lastovskii, A. Wieck
Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 μm
V. P. Kuznetsov, M. V. Kuznetsov, Z. F. Krasil’nik
A technique for characterizing surface recombination in silicon wafers based on thermal-emission measurements
V. V. Bogatyrenko
Sublimation molecular beam epitaxy of silicon-based structures
V. P. Kuznetsov, Z. F. Krasil’nik
Secondary cluster ions Ge 2 − and Ge 3 − for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures
M. N. Drozdov, Yu. N. Drozdov, D. N. Lobanov, A. V. Novikov, D. V. Yurasov
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm
Yu. G. Sadofyev, N. Samal, B. A. Andreev, V. I. Gavrilenko, S. V. Morozov, A. G. Spivakov, A. N. Yablonsky