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Zeitschrift

Semiconductors

Semiconductors 4/2014

Ausgabe 4/2014

Inhaltsverzeichnis ( 26 Artikel )

01.04.2014 | Electronic Properties of Semiconductors | Ausgabe 4/2014

Features of the band structure of (CuInSe2)1 − x (MeSe) x alloys (Me = Mn, Fe)

Sh. M. Hasanli, Yu. M. Basalaev, U. F. Samedova

01.04.2014 | Electronic Properties of Semiconductors | Ausgabe 4/2014

On the thermal properties of Ag2Te and Ag2Se in the region of the phase transition

S. A. Aliev, D. G. Arasly

01.04.2014 | Electronic Properties of Semiconductors | Ausgabe 4/2014

On the polarization caused by bulk charges and the ionic conductivity in TlInSe2 crystals

R. M. Sardarly, O. A. Samedov, N. A. Alieva, A. P. Abdullayev, E. K. Huseynov, I. S. Hasanov, F. T. Salmanov

01.04.2014 | Electronic Properties of Semiconductors | Ausgabe 4/2014

Thermoelectric efficiency of intermetallic compound ZnSb

M. I. Fedorov, L. V. Prokofieva, Yu. I. Ravich, P. P. Konstantinov, D. A. Pshenay-Severin, A. A. Shabaldin

01.04.2014 | Electronic Properties of Semiconductors | Ausgabe 4/2014

Calculation of the electron mobility for the Δ1 model of the conduction band of germanium single crystals

S. V. Luniov, P. F. Nazarchuk, O. V. Burban

01.04.2014 | Spectroscopy, Interaction with Radiation | Ausgabe 4/2014

Light emission from tin-dioxide crystals

V. F. Agekian, A. Yu. Serov, N. G. Filosofov

01.04.2014 | Spectroscopy, Interaction with Radiation | Ausgabe 4/2014

Nonlinear optical effect upon the irradiation of GaN with cluster ions

P. A. Karaseov, K. V. Karabeshkin, A. I. Titov, V. B. Shilov, G. M. Ermolaeva, V. G. Maslov, A. O. Orlova

01.04.2014 | Surfaces, Interfaces, and Thin Films | Ausgabe 4/2014

Effect of the tin impurity on the energy spectrum and photoelectric properties of nanostructured In2O3 films

K. A. Drozdov, I. V. Krylov, A. A. Irkhina, R. B. Vasiliev, M. N. Rumyantseva, A. M. Gaskov, L. I. Ryabova, D. R. Khokhlov

01.04.2014 | Surfaces, Interfaces, and Thin Films | Ausgabe 4/2014

p-GaSb(Ox)/n-GaSb native-oxide heterojunctions: Non-vacuum process and photoelectric properties

V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, T. N. Ushakova, G. A. Il’chuk

01.04.2014 | Surfaces, Interfaces, and Thin Films | Ausgabe 4/2014

Study of GaInP solar-cell interfaces by variable-flux spectral measurements

I. A. Morozov, A. S. Gudovskikh

01.04.2014 | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Ausgabe 4/2014

Analytical model of the electrical instability mechanism in multibarrier heterostructures with tunnel-opaque barriers

V. A. Gergel, I. V. Altukhov, A. V. Verkhovtseva, G. G. Galiev, N. M. Gorshkova, S. S. Zhigaltsov, A. P. Zelenyi, E. A. Il’ichev, V. S. Minkin, S. K. Paprotskij, M. N. Yakupov

01.04.2014 | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Ausgabe 4/2014

Composite materials based on nanostructured zinc oxide

Kh. A. Abdullin, N. B. Bakranov, D. V. Ismailov, J. K. Kalkozova, S. E. Kumekov, L. V. Podrezova, G. Cicero

01.04.2014 | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Ausgabe 4/2014

Morphological characteristics of grain boundaries in multicrystalline silicon

S. M. Pescherova, A. I. Nepomnyaschih, L. A. Pavlova, I. A. Eliseev, R. V. Presnyakov

01.04.2014 | Physics of Semiconductor Devices | Ausgabe 4/2014

Long-channel field-effect transistor with short-channel transistor properties

A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

01.04.2014 | Physics of Semiconductor Devices | Ausgabe 4/2014

Electrical properties of MOS diodes In/TiO2/p-CdTe

V. V. Brus, M. I. Ilashchuk, I. G. Orletsky, P. D. Maryanchuk, K. S. Ulyanytskiy

01.04.2014 | Physics of Semiconductor Devices | Ausgabe 4/2014

Current flow through metal shunts in ohmic contacts to n +-Si

A. V. Sachenko, A. E. Belyaev, V. A. Pilipenko, T. V. Petlitskaya, V. A. Anischik, N. S. Boltovets, R. V. Konakova, Ya. Ya. Kudryk, A. O. Vinogradov, V. N. Sheremet

01.04.2014 | Physics of Semiconductor Devices | Ausgabe 4/2014

Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon

A. M. Mahajan, A. G. Khairnar, B. J. Thibeault

01.04.2014 | Physics of Semiconductor Devices | Ausgabe 4/2014

Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys

A. V. Babichev, A. A. Lazarenko, E. V. Nikitina, E. V. Pirogov, M. S. Sobolev, A. Yu. Egorov

01.04.2014 | Physics of Semiconductor Devices | Ausgabe 4/2014

Model of the behavior of MOS structures under ionizing irradiation

O. V. Aleksandrov

01.04.2014 | Fabrication, Treatment, and Testing of Materials and Structures | Ausgabe 4/2014

Formation of built-in potential in Si (100) crystals under microwave plasma treatment

R. K. Yafarov

01.04.2014 | Fabrication, Treatment, and Testing of Materials and Structures | Ausgabe 4/2014

Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation

A. A. Shemukhin, Y. V. Balakshin, V. S. Chernysh, S. A. Golubkov, N. N. Egorov, A. I. Sidorov

01.04.2014 | Fabrication, Treatment, and Testing of Materials and Structures | Ausgabe 4/2014

Structure and properties of electrodeposited films and film stacks for precursors of chalcopyrite and kesterite solar cells

N. P. Klochko, G. S. Khrypunov, N. D. Volkova, V. R. Kopach, A. V. Momotenko, V. N. Lyubov

01.04.2014 | Fabrication, Treatment, and Testing of Materials and Structures | Ausgabe 4/2014

Electrodeposited zinc oxide arrays with the moth-eye effect

N. P. Klochko, G. S. Khrypunov, Y. O. Myagchenko, E. E. Melnychuk, V. R. Kopach, K. S. Klepikova, V. M. Lyubov, A. V. Kopach

01.04.2014 | Fabrication, Treatment, and Testing of Materials and Structures | Ausgabe 4/2014

Properties of Zn1 − x Co x O films produced by pulsed laser deposition with fast particle separation

A. A. Lotin, O. A. Novodvorsky, V. V. Rylkov, D. A. Zuev, O. D. Khramova, M. A. Pankov, B. A. Aronzon, A. S. Semisalova, N. S. Perov, A. Lashkul, E. Lahderanta, V. Ya. Panchenko

01.04.2014 | Fabrication, Treatment, and Testing of Materials and Structures | Ausgabe 4/2014

Effect of low-temperature annealing on the quality of InSe layered single crystals and the characteristics of n-InSe/p-InSe heterojunctions

V. A. Khandozhko, Z. R. Kudrynskyi, Z. D. Kovalyuk

01.04.2014 | Fabrication, Treatment, and Testing of Materials and Structures | Ausgabe 4/2014

Specific features of the sol-gel formation and optical properties of 3d metal/porous silicon composites

A. S. Lenshin, P. V. Seredin, D. A. Minakov, V. M. Kashkarov, B. L. Agapov, E. P. Domashevskaya, I. E. Kononova, V. A. Moshnikov, N. S. Terebova, I. N. Shabanova

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