Ausgabe 3/2013
Inhalt (26 Artikel)
Electrical properties of Pb1 − x Mn x Te single crystals with an excess of tellurium
G. Z. Bagieva, G. D. Abdinova, N. B. Mustafayev, D. Sh. Abdinov
Photoconductivity of vanadium-doped lead telluride in the terahertz spectral region
A. I. Artamkin, A. A. Dobrovolsky, A. A. Vinokurov, V. P. Zlomanov, S. N. Danilov, V. V. Bel’kov, L. I. Ryabova, D. R. Khokhlov
Specific features of self-compensation in Er x Sn1 − x Se solid solutions
J. I. Huseynov, M. I. Murguzov, Sh. S. Ismayilov
Violation of neutrality and occurrence of S-shaped current-voltage characteristic for doped semiconductors under double injection
T. T. Mnatsakanov, A. G. Tandoev, M. E. Levinshtein, S. N. Yurkov, J. W. Palmour
Study of the recombination process at crystallite boundaries in CuIn1 − x Ga x Se2 (CIGS) films by microwave photoconductivity
K. V. Bocharov, G. F. Novikov, T. Y. Hsieh, M. V. Gapanovich, M. J. Jeng
Thermally deposited Ag-doped CdS thin film transistors with high-k rare-earth oxide Nd2O3 as gate dielectric
P. Gogoi
Optical size effect in In2O3 nanostructured films
V. M. Katerynchuk, Z. R. Kudrynskyi
Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices
R. M. Peleshchak, S. K. Guba, O. V. Kuzyk, I. V. Kurilo, O. O. Dankiv
Dependence of the efficiency of Raman scattering in silicon nanowire arrays on the excitation wavelength
K. V. Bunkov, L. A. Golovan, K. A. Gonchar, V. Yu. Timoshenko, P. K. Kashkarov, M. Kulmas, V. Sivakov
Influence of irradiation with swift heavy ions on multilayer Si/SiO2 heterostructures
G. A. Kachurin, S. G. Cherkova, D. V. Marin, V. A. Volodin, A. G. Cherkov, A. Kh. Antonenko, G. N. Kamaev, V. A. Skuratov
Revealing the surface interface correlations in a-Si:H films by 2D detrended fluctuation analysis
A. V. Alpatov, S. P. Vikhrov, N. V. Grishankina
Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts
A. Šilenas, Yu. Požela, K. Požela, V. Jucienė, I. S. Vasil’evskii, G. B. Galiev, S. S. Pushkarev, E. A. Klimov
Study of the composition, structure, and optical properties of a-Si1 − x C x :H〈Er〉 films erbium doped from the Er(pd)3 complex compound
V. Kh. Kudoyarova, V. A. Tolmachev, E. V. Gushchina
Photoconductivity of composite structures based on porous SnO2 sensitized with CdSe nanocrystals
K. A. Drozdov, V. I. Kochnev, A. A. Dobrovolsky, R. B. Vasiliev, A. V. Babynina, M. N. Rumyantseva, A. M. Gaskov, L. I. Ryabova, D. R. Khokhlov
Features of the performance of a transient voltage suppressor in the pulsed mode
A. Z. Rahmatov, O. A. Abdulkhaev, A. V. Karimov, D. M. Yodgorova
Surface functional composition and sensor properties of ZnO, Fe2O3, and ZnFe2O4
S. S. Karpova, V. A. Moshnikov, S. V. Mjakin, E. S. Kolovangina
Theory and simulation of combined mechanisms limiting the safe operating area of power semiconductor microelectronic switches
A. V. Gorbatyuk, D. V. Gusin, B. V. Ivanov
Picosecond internal Q-switching mode correlates with laser diode breakdown voltage
B. Lanz, S. N. Vainshtein, V. M. Lantratov, N. A. Kalyuzhnyy, S. A. Mintairov, J. T. Kostamovaara
Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount
L. K. Markov, I. P. Smirnova, A. S. Pavlyuchenko, M. V. Kukushkin, E. D. Vasil’eva, A. E. Chernyakov, A. S. Usikov
Optimization of the deposition and annealing conditions of fluorine-doped indium oxide films for silicon solar cells
G. G. Untila, T. N. Kost, A. B. Chebotareva, M. A. Timofeyev
Influence of doping with third group oxides on properties of zinc oxide thin films
Sowmya Palimar, Kasturi V. Bangera, G. K. Shivakumar
Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers
M. V. Shaleev, A. V. Novikov, D. V. Yurasov, J. M. Hartmann, O. A. Kuznetsov, D. N. Lobanov, Z. F. Krasilnik
Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms
D. V. Shengurov, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov, M. V. Stepikhova, M. N. Drozdov, Z. F. Krasilnik
Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
M. M. Rozhavskaya, V. V. Lundin, E. E. Zavarin, S. I. Troshkov, P. N. Brunkov, A. F. Tsatsulnikov
Specific features of nanosize object formation in an InSb/InAs system by metal-organic vapor-phase epitaxy
V. V. Romanov, P. A. Dement’ev, K. D. Moiseev
The mechanism of contact-resistance formation on lapped n-Si surfaces
A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, A. O. Vinogradov, L. M. Kapitanchuk, R. V. Konakova, V. P. Kostylyov, Ya. Ya. Kudryk, V. P. Kladko, V. N. Sheremet