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Microsystem Technologies
Erschienen in: Microsystem Technologies 7/2007

01.04.2007 | Technical Paper

Eutectic bonding of Al-based high aspect ratio microscale structures

verfasst von: Fanghua Mei, J. Jiang, W. J. Meng

Erschienen in: Microsystem Technologies | Ausgabe 7/2007

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Abstract

Metal-based microelectromechanical systems (MEMS) have important advantages over Si-based MEMS. To form any functional metal-based microdevice from metallic high-aspect-ratio microscale structures (HARMS), proper assembly and packaging are required. In this paper, we report successful eutectic bonding of Al-based HARMS using Al–Ge intermediate layers. A series of Al–Ge composite thin films were vapor deposited. Their composition and micro-/nano-scale structure were characterized. The morphology of bonded Al structures was examined, including the morphology of separated surfaces.
Vorheriger Artikel Investigation of the torsion and bending effects on static stability of electrostatic torsional micromirrors

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Metadaten
Titel
Eutectic bonding of Al-based high aspect ratio microscale structures
verfasst von
Fanghua Mei
J. Jiang
W. J. Meng
Publikationsdatum
01.04.2007
Verlag
Springer-Verlag
Erschienen in
Microsystem Technologies / Ausgabe 7/2007
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-006-0352-3

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