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Journal of Materials Science

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19.04.2018 | Mechanochemical Synthesis

Synthesis and photoluminescence of doped Si₃N₄ nanowires with various valence electron configurations

verfasst von: Zhifeng Huang, Zhihao Wang, Hailong Yuan, Jianwen Zhang, Fei Chen, Qiang Shen, Lianmeng Zhang

Erschienen in: Journal of Materials Science | Ausgabe 19/2018

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Abstract

In this work, Y-, Ce- and Tb-doped Si₃N₄ nanowires have been successfully synthesized by directly nitriding-doped nanocrystalline silicon powders obtained by cryomilling. The obtained single-crystalline α-Si₃N₄ nanowires are nearly 20–50 nm in diameter and up to several micrometers in length. The photoluminescence properties of doped Si₃N₄ nanowires have also been investigated. The Y-doped Si₃N₄ nanowires exhibit the main peak at 425 nm, Ce-doped Si₃N₄ nanowires show a narrow emission peak at 450 nm, and Tb-doped Si₃N₄ nanowires present a strong and sharp emission peak at 545 nm. Combining with our previous works on Al-, La- and Eu-doped Si₃N₄ nanowires, the effects of dopants with different valence electron configurations on the photoluminescence properties have been explored. The present study provides a guide to fabricate Si₃N₄-based nanomaterials for different photonic applications.

Vorheriger Artikel Mechanosynthesis of composites in chemically non-reacting and exothermically reacting systems for magnetic abrasive media

Nächster Artikel Rapid mechanochemical synthesis of titanium and hafnium carbides

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Titel: Synthesis and photoluminescence of doped Si3N4 nanowires with various valence electron configurations
verfasst von: Zhifeng Huang
Zhihao Wang
Hailong Yuan
Jianwen Zhang
Fei Chen
Qiang Shen
Lianmeng Zhang
Publikationsdatum: 19.04.2018
Verlag: Springer US
Erschienen in: Journal of Materials Science / Ausgabe 19/2018
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-018-2330-4

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