Ausgabe 3/2019
Inhalt (32 Artikel)
First-principles study on the electronic and optical properties of the ZnTe/InP heterojunction
Li Chen, Xiaolong Zhou, Jie Yu
First-principles analysis of the detection of amine vapors using an antimonene electroresistive molecular device
R. Bhuvaneswari, V. Nagarajan, R. Chandiramouli
Structural, electronic, and optical properties of AlNxSb1−x alloys through TB–mBJ–PBEsol: DFT study
A. Bentayeb, F. Driss Khodja, S. Chibani, N. Marbouh, B. Bekki, B. Khalfallah, M. Elkeurti
The effects of a Stone–Wales defect on the performance of a graphene-nanoribbon-based Schottky diode
Komeil Rahmani, Meisam Rahmani, Mohammad Taghi Ahmadi, Hediyeh Karimi, Razali Ismail
First-principles study of molecule adsorption on Ni-decorated monolayer MoS2
Maryam Barzegar, Masoud Berahman, Reza Asgari
Widely tunable electronic properties in graphene/two-dimensional silicon carbide van der Waals heterostructures
Asmaul Smitha Rashid, Md. Sherajul Islam, Naim Ferdous, Khalid N. Anindya, Jeongwon Park, Akihiro Hashimoto
Design and performance analysis of low-power SRAM based on electrostatically doped tunnel CNTFETs
Shashi Bala, Mamta Khosla
Electrostatically doped drain junctionless transistor for low-power applications
Mohd Adil Raushan, Naushad Alam, Mohd Jawaid Siddiqui
Low-k polymer gate dielectric selection for organic thin-film transistors (OTFTs) using material selection methodologies
Karri Babu Ravi Teja, Navneet Gupta
Two-dimensional model for double-gate LDMOSFET devices
Mohamed M. El-Dakroury, Zaki Nosseir, Yehea I. Ismail, Hamdy Abdelhamid
Optimization of the geometry of a charge plasma double-gate junctionless transistor for improved RF stability
Adhithan Pon, Arkaprava Bhattacharyya, B. Padmanaban, R. Ramesh
A GaN RB-MISHEMT with a Schottky–MIS hybrid drain and An Al0−0.50Ga1−0.50N/GaN heterojunction
Yijun Shi, Chen Wanjun, Tangsheng Chen
A normally OFF GaN CAVET and its thermal and trap analysis
Sumit Verma, M. Saqib Akhoon, Sajad A. Loan, Mana Al Reshan
A theoretical investigation of the optoelectronic performance of some new carbazole dyes
Souad El Mzioui, Si Mohamed Bouzzine, Mohamed Bourass, Mohammed Naciri Bennani, Mohamed Hamidi
Optimization of the performance of transparent enclosures with deposited gold nanolayers using an analytical model
Moharram Ghiyasvand, Mohammad Naser-Moghadasi, Abbas Ali Lotfi-Neyestanak, Alireza Nikfarjam
Optimization of anti-reflective coatings using a graded index based on silicon oxynitride
A. M. Kaddouri, A. Kouzou, A. Hafaifa, A. Khadir
Using the full quantum basis set to simulate quantum-dot cellular automata devices
A. Taylor Baldwin, Jeffrey D. Will, Douglas Tougaw
Directed acyclic graph-based design of digital logic circuits using QCA
Jadav Chandra Das, Debashis De
Parameter optimization of an electron ballistic switch in a quantum network model
D. E. Tsurikov, A. M. Yafyasov
Adaptation of a compact SPICE level 3 model for oxide thin-film transistors
Kavindra Kandpal, Navneet Gupta
Dual-chirality GAA-CNTFET-based SCPF-TCAM cell design for low power and high performance
S. V. V. Satyanarayana, Singh Rohitkumar Shailendra, V. N. Ramakrishnan, Sridevi Sriadibhatla
An efficient Verilog-A memristor model implementation: simulation and application
Faten Ouaja Rziga, Khaoula Mbarek, Sami Ghedira, Kamel Besbes
A brief review of frequency, radiation pattern, polarization, and compound reconfigurable antennas for 5G applications
M. Kamran Shereen, M. I. Khattak, G. Witjaksono
Design of a U-shaped circularly polarized wearable antenna with DGS on a fabric substrate for WLAN and C-band applications
Ashok Yadav, Vinod Kumar Singh, Himanshu Mohan