Ausgabe 3/2016
Inhalt (44 Artikel)
FP-LAPW study of energy bands and optical properties of the filled skutterudite with spin–orbit coupling
A. Shankar, D. P. Rai, Sandeep, R. Khenata, M. P. Ghimire, R. K. Thapa
Spectroscopic and structural study of adsorption of benzene on silver using DFT
T. N. Rekha, Beulah J. M. Rajkumar
First-principles simulation of oxygen vacancy migration in , , and at their interfaces for applications in resistive random-access memories
Aqyan A. Bhatti, Cheng-Chih Hsieh, Anupam Roy, Leonard F. Register, Sanjay K. Banerjee
Dual-material double-gate tunnel FET: gate threshold voltage modeling and extraction
Samantha Lubaba Noor, Samia Safa, Md. Ziaur Rahman Khan
Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTE
Shaoyan Di, Kai Zhao, Tiao Lu, Gang Du, Xiaoyan Liu
Role of annealing temperature in the oxide charge distribution in high--based MOS devices: simulation and experiment
Debaleen Biswas, Ayan Chakraborty, Supratic Chakraborty
Optimization of saddle junctionless FETs for extreme high integration
Xiaoshi Jin, Meile Wu, Xi Liu, Jung-Hee Lee, Jong-Ho Lee
Microscopic noise simulation of long- and short-channel nMOSFETs by a deterministic approach
Dino Ruić, Christoph Jungemann
A 3D analytical modeling of tri-gate tunneling field-effect transistors
Saeid Marjani, Seyed Ebrahim Hosseini, Rahim Faez
Series and parallel resistance effects on the C–V and G–V characteristics of /Si structure
Omar Rejaiba, Alejandro F. Braña, Adel Matoussi
Drain current multiplication in thin pillar vertical MOSFETs due to depletion isolation and charge coupling
M. M. A. Hakim, C. H. de Groot, S. Hall, Peter Ashburn
Delta-doped tunnel FET (D-TFET) to improve current ratio () and ON-current performance
S. Panda, S. Dash, S. K. Behera, G. P. Mishra
Investigation of trigate JLT with dual-k sidewall spacers for enhanced analog/RF FOMs
Gaurav Saini, Sudhanshu Choudhary
Empirical transport model of strained CNT transistors used for sensor applications
Christian Wagner, Jörg Schuster, Thomas Gessner
Tuning electronic transport of zigzag graphene nanoribbons by ordered B or N atom doping
Lihua Wang, Zizhen Zhang, Jianguo Zhao, Bingjun Ding, Yong Guo
Sensitive DNA detection based on the capacitance properties of graphene
Nahid Khadempar, Hashem Alipour, Masoud Berahman, Arash Yazdan panah gohar rizi, Masoud Jabbari
Erratum to: Sensitive DNA detection based on the capacitance properties of graphene
Nahid Khadempar, Hashem Alipour, Masoud Berahman, Arash Yazdanpanah Goharrizi, Masoud Jabbari
Prior knowledge input neural network method for GFET description
Ji Zhang, Yawei Lv, Sheng Chang, Hao Wang, Jin He, Qijun Huang
Performance analysis of uniaxially strained monolayer black phosphorus and blue phosphorus n-MOSFET and p-MOSFET
L. Banerjee, A. Mukhopadhyay, A. Sengupta, H. Rahaman
Energy gap renormalization and diamagnetic susceptibility in quantum wires with different cross-sectional shape
Z. Avazzadeh, R. Khordad, H. Bahramiyan, S. A. Mohammadi
A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation
K. Rupp, C. Jungemann, S.-M. Hong, M. Bina, T. Grasser, A. Jüngel
High-performance multiplexer architecture for quantum-dot cellular automata
Hamid Rashidi, Abdalhossein Rezai, Sheema Soltany
Simultaneous all-optical basic arithmetic operations using QD-SOA-assisted Mach–Zehnder interferometer
Dilip Kumar Gayen, Tanay Chattopadhyay
On-printed circuit board emulator with controllability of pinched hysteresis loop for nanoscale thin-film memristor device
Van Ha Nguyen, Keun Yong Sohn, Hanjung Song
Evaluation of a transfer function model using experimental data and numerical analysis: the case of a pyroelectric sensor
Nejmeddine Sifi, Ahmed Jridi, Oualid Touayar
An improved CMOS-based inductor simulator with simplified structure for low-frequency applications
Longjie Zhong, Xinquan Lai, Donglai Xu, Michael Short, Bing Yuan, Zeyu Wang
Performance evaluation of micromachined fabricated multiband horn-shaped slotted patch antenna
Rajat Arora, Shashi B. Rana, Sandeep Arya, Saleem Khan
Comparative performance analysis of InGaN/GaN multi-quantum-well light-emitting diodes with p- and n-type step-doped barriers
Sumitra Singh, Pranav Utpalla, Suchandan Pal, Chenna Dhanavantri
Design of ultrafast all-optical pulsed-mode 2 2 crossbar switch using quantum-dot semiconductor optical amplifier-based Mach–Zehnder interferometer
Dimitris Kastritsis, Kyriakos E. Zoiros, Evangelia Dimitriadou
An optical absorption model including absorber saturation
Matthias Auf der Maur, Desiree Gentilini, Aldo Di Carlo, Seung-Il Cha, Dong Yoon Lee
A novel laminated gate to improve the ON-state resistance of LDMOS transistors
Amin Pak, Ali A. Orouji
Novel 4H-SiC MESFET with modified depletion region by dual well for high-current applications
Ali A. Orouji, Zohreh Roustaie, Zeinab Ramezani
Analysis of external quantum efficiency and conversion efficiency of thin crystalline silicon solar cells with textured front surface
Amira Bougoffa, Abdessalem Trabelsi, Abdelaziz Zouari, Essebti Dhahri
Simplified numerical simulation of organic photovoltaic devices
Chang-Hyun Kim, Jinwoo Choi, Yvan Bonnassieux, Gilles Horowitz
A Gaussian model for recombination via carrier-trap distributions in organic solar cells
L. F. Hernández-García, O. Ramírez-Sánchez, V. Cabrera-Arenas, L. M. Reséndiz-Mendoza
Effect of mobility and band structure of hole transport layer in planar heterojunction perovskite solar cells using 2D TCAD simulation
Aaesha Alnuaimi, Ibraheem Almansouri, Ammar Nayfeh